scholarly journals Reliability Investigation of a Carbon Nanotube Array Thermal Interface Material

Energies ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 2080 ◽  
Author(s):  
Andreas Nylander ◽  
Josef Hansson ◽  
Majid Kabiri Samani ◽  
Christian Chandra Darmawan ◽  
Ana Borta Boyon ◽  
...  

As feature density increases within microelectronics, so does the dissipated power density, which puts an increased demand on thermal management. Thermal interface materials (TIMs) are used at the interface between contacting surfaces to reduce the thermal resistance, and is a critical component within many electronics systems. Arrays of carbon nanotubes (CNTs) have gained significant interest for application as TIMs, due to the high thermal conductivity, no internal thermal contact resistances and an excellent conformability. While studies show excellent thermal performance, there has to date been no investigation into the reliability of CNT array TIMs. In this study, CNT array TIMs bonded with polymer to close a Si-Cu interface were subjected to thermal cycling. Thermal interface resistance measurements showed a large degradation of the thermal performance of the interface within the first 100 cycles. More detailed thermal investigation of the interface components showed that the connection between CNTs and catalyst substrate degrades during thermal cycling even in the absence of thermal expansion mismatch, and the nature of this degradation was further analyzed using X-ray photoelectron spectroscopy. This study indicates that the reliability will be an important consideration for further development and commercialization of CNT array TIMs.

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1699
Author(s):  
Sriharsha Sudhindra ◽  
Fariborz Kargar ◽  
Alexander A. Balandin

We report on experimental investigation of thermal contact resistance, RC, of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness, Sq. It is found that the thermal contact resistance depends on the graphene loading, ξ, non-monotonically, achieving its minimum at the loading fraction of ξ ~15 wt %. Decreasing the surface roughness by Sq~1 μm results in approximately the factor of ×2 decrease in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, KTIM, thermal contact resistance, RC, and the total thermal resistance of the thermal interface material layer on ξ and Sq can be utilized for optimization of the loading fraction of graphene for specific materials and roughness of the connecting surfaces. Our results are important for the thermal management of high-power-density electronics implemented with diamond and other wide-band-gap semiconductors.


2018 ◽  
Vol 7 (4.33) ◽  
pp. 530
Author(s):  
Mazlan Mohamed ◽  
Mohd Nazri Omar ◽  
Mohamad Shaiful Ashrul Ishak ◽  
Rozyanty Rahman ◽  
Zaiazmin Y.N ◽  
...  

Epoxy mixed with others filler for thermal interface material (TIM) had been well conducted and developed. There are problem occurs when previous material were used as matrix material likes epoxy that has non-uniform thickness of thermal interface material produce, time taken for solidification and others. Thermal pad or thermal interface material using graphene as main material to overcome the existing problem and at the same time to increase thermal conductivity and thermal contact resistance. Three types of composite graphene were used for thermal interface material in this research. The sample that contain 10 wt. %, 20 wt. % and 30 wt. % of graphene was used with different contain of graphene oxide (GO).  The thermal conductivity of thermal interface material is both measured and it was found that the increase of amount of graphene used will increase the thermal conductivity of thermal interface material. The highest thermal conductivity is 12.8 W/ (mK) with 30 w. % graphene. The comparison between the present thermal interface material and other thermal interface material show that this present graphene-epoxy is an excellent thermal interface material in increasing thermal conductivity.  


2020 ◽  
Vol 1010 ◽  
pp. 160-165
Author(s):  
Mazlan Mohamed ◽  
Mohd Nazri Omar ◽  
Mohamad Shaiful Ashrul Ishak ◽  
Rozyanty Rahman ◽  
Nor Zaiazmin Yahaya ◽  
...  

Thermal interface material (TIM) had been well conducted and developed by using several material as based material. A lot of combination and mixed material were used to increase thermal properties of TIM. Combination between materials for examples carbon nanotubes (CNT) and epoxy had had been used before but the significant of the studied are not exactly like predicted. In this studied, thermal interface material using graphene and CNT as main material were used to increase thermal conductivity and thermal contact resistance. These two types of TIM had been compare to each other in order to find wich material were able to increase the thermal conductivity better. The sample that contain 20 wt. %, 40 wt. % and 60 wt. % of graphene and CNT were used in this studied. The thermal conductivity of thermal interface material is both measured and it was found that TIM made of graphene had better thermal conductivity than CNT. The highest thermal conductivity is 23.2 W/ (mK) with 60 w. % graphene meanwhile at 60 w. % of CNT only produce 12.2 W/ (mK thermal conductivity).


Author(s):  
Amer M. Hamdan ◽  
Jeong H. Cho ◽  
Ryan D. Johnson ◽  
David F. Bahr ◽  
Robert F. Richards ◽  
...  

In this work, the use of vertically aligned carbon nanotubes (VACNTs) as thermal interface materials is presented. The VACNT structure is fabricated on 4×4 mm silicon substrates using chemical vapor deposition (CVD). These VACNT structures can be transferred to other substrates using a thermocompression bonding process; the process transfers the VACNTs to metalized silicon die which are tested after that as thermal interface materials. Two configurations of VACNTs were tested: one with a full coverage of VACNTs and one with patterned VACNTs. For the full coverage turf a thermal interface resistance as low as 1.082 cm2K/W was obtained, while a thermal interface resistance of 0.044 cm2K/W was obtained for the patterned turfs.


Author(s):  
Chandan K. Roy ◽  
Daniel K. Harris ◽  
Sushil Bhavnani ◽  
Michael C. Hamilton ◽  
Wayne Johnson ◽  
...  

This paper focuses on developing a reliable thermal interface material (TIM) using low melt alloys (LMAs) containing gallium (Ga), indium (In), bismuth (Bi), and tin (Sn). The investigation described herein involved the in situ thermal performance of the LMAs as well as performance evaluation after accelerated life cycle testing, which included isothermal aging at 130°C and thermal cycling from −40°C to 80°C. Three alloys (75.5Ga &24.5In, 100Ga, and 51In, 32.5Bi &16.5Sn) were chosen for testing the thermal performance. Testing methodologies used follow ASTM D5470 protocols and the results are compared with some commercially available TIMs. The LMAs-substrate interaction was investigated by applying the alloys using different surface treatments (copper and tungsten). Measurements show that the alloys did survive extended aging and cycling depending upon the substrate-alloy combinations.


2012 ◽  
Vol 134 (2) ◽  
Author(s):  
Joseph R. Wasniewski ◽  
David H. Altman ◽  
Stephen L. Hodson ◽  
Timothy S. Fisher ◽  
Anuradha Bulusu ◽  
...  

The next generation of thermal interface materials (TIMs) are currently being developed to meet the increasing demands of high-powered semiconductor devices. In particular, a variety of nanostructured materials, such as carbon nanotubes (CNTs), are interesting due to their ability to provide low resistance heat transport from device-to-spreader and compliance between materials with dissimilar coefficients of thermal expansion (CTEs), but few application-ready configurations have been produced and tested. Recently, we have undertaken major efforts to develop functional nanothermal interface materials (nTIMs) based on short, vertically aligned CNTs grown on both sides of a thin interposer foil and interfaced with substrate materials via metallic bonding. A high-precision 1D steady-state test facility has been utilized to measure the performance of nTIM samples, and more importantly, to correlate performance to the controllable parameters. In this paper, we describe our material structures and the myriad permutations of parameters that have been investigated in their design. We report these nTIM thermal performance results, which include a best to-date thermal interface resistance measurement of 3.5 mm2 K/W, independent of applied pressure. This value is significantly better than a variety of commercially available, high-performance thermal pads and greases we tested, and compares favorably with the best results reported for CNT-based materials in an application-representative setting.


Author(s):  
Vadim Gektin ◽  
Sai Ankireddi ◽  
Jim Jones ◽  
Stan Pecavar ◽  
Paul Hundt

Thermal Interface Materials (TIMs) are used as thermally conducting media to carry away the heat dissipated by an energy source (e.g. active circuitry on a silicon die). Thermal properties of these interface materials, specified on vendor datasheets, are obtained under conditions that rarely, if at all, represent real life environment. As such, they do not accurately portray the material thermal performance during a field operation. Furthermore, a thermal engineer has no a priori knowledge of how large, in addition to the bulk thermal resistance, the interface contact resistances are, and, hence, how much each influences the cooling strategy. In view of these issues, there exists a need for these materials/interfaces to be characterized experimentally through a series of controlled tests before starting on a thermal design. In this study we present one such characterization for a candidate thermal interface material used in an electronic cooling application. In a controlled test environment, package junction-to-case, Rjc, resistance measurements were obtained for various bondline thicknesses (BLTs) of an interface material over a range of die sizes. These measurements were then curve-fitted to obtain numerical models for the measured thermal resistance for a given die size. Based on the BLT and the associated thermal resistance, the bulk thermal conductivity of the TIM and the interface contact resistance were determined, using the approach described in the paper. The results of this study permit sensitivity analyses of BLT and its effect on thermal performance for future applications, and provide the ability to extrapolate the results obtained for the given die size to a different die size. The suggested methodology presents a readily adaptable approach for the characterization of TIMs and interface/contact resistances in the industry.


Author(s):  
David Shaddock ◽  
Stanton Weaver ◽  
Ioannis Chasiotis ◽  
Binoy Shah ◽  
Dalong Zhong

The power density requirements continue to increase and the ability of thermal interface materials has not kept pace. Increasing effective thermal conductivity and reducing bondline thickness reduce thermal resistance. High thermal conductivity materials, such as solders, have been used as thermal interface materials. However, there is a limit to minimum bondline thickness in reducing resistance due to increased fatigue stress. A compliant thermal interface material is proposed that allows for thin solder bondlines using a compliant structure within the bondline to achieve thermal resistance <0.01 cm2C/W. The structure uses an array of nanosprings sandwiched between two plates of materials to match thermal expansion of their respective interface materials (ex. silicon and copper). Thin solder bondlines between these mating surfaces and high thermal conductivity of the nanospring layer results in thermal resistance of 0.01 cm2C/W. The compliance of the nanospring layer is two orders of magnitude more compliant than the solder layers so thermal stresses are carried by the nanosprings rather than the solder layers. The fabrication process and performance testing performed on the material is presented.


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