Effect of CoO Doping on the Sintering Ability and Mechanical Properties of Y-TZP

2004 ◽  
Vol 449-452 ◽  
pp. 265-268 ◽  
Author(s):  
Tetsuhiko Onda ◽  
H. Yamauchi ◽  
Motozo Hayakawa

The effect of CoO addition into Y-TZP (Yttria doped Tetragonal Zirconia Polycrystals) was studied on the evolution of its sintering ability, grain size, grain boundary structure and mechanical properties. The doping of a small amount of CoO effectively reduced the sintering temperature. A small amount of CoO up to ~ 0.3 mol% was effective for the suppression of grain growth, but the addition of 1.0 mole % resulted in an enhanced grain growth. The hardness and toughness of the CoO doped TZP were about the same as those of undoped TZP. Furthermore, despite the grain refinement, CoO doped TZP did not exhibit improved mechanical properties. This may be suggesting that CoO dopant had weakened the grain boundary strength.

2011 ◽  
Vol 683 ◽  
pp. 103-112 ◽  
Author(s):  
B. Yang

The evolution of the microstructure and mechanical properties of electrodeposited nanocrystalline Ni with different annealing procedures was studied systematically. For the annealed specimens hardness decreases with increasing average grain size but the dependence changes at different grain size ranges. The specimens annealed at a low temperature show higher hardness compared to the as-deposited nanocrystalline Ni, despite an increased measured average grain size. In association with this hardening an increase in elastic modulus and a decrease in microstrain was observed after annealing. With increasing annealing temperature both the tensile strength and the fracture strain were observed to decrease, this is companied with a transition from ductile to brittle in the fracture surfaces. These results indicated that the mechanical behaviour of nanocrystalline Ni depends not only on the average grain size but also on the grain boundary structure. A change in the grain boundary state arising from annealing may be responsible for the observed increase in hardness and elastic modulus as well as the deterioration of tensile properties.


2001 ◽  
Vol 16 (9) ◽  
pp. 2733-2738 ◽  
Author(s):  
H. Wang ◽  
A. Sharma ◽  
A. Kvit ◽  
Q. Wei ◽  
X. Zhang ◽  
...  

We investigated mechanical properties of TiN as a function of microstructure varying from nanocrystalline to single crystal TiN films deposited on (100) silicon substrates. By varying the substrate temperature from 25 to 700 °C during pulsed laser deposition, the microstructure of TiN films changed from nanocrystalline (having a uniform grain size of 8 nm) to a single crystal epitaxial film on the silicon (100) substrate. The microstructure and epitaxial nature of these films were investigated using x-ray diffraction and high-resolution transmission electron microscopy. Hardness measurements were made using nanoindentation techniques. The nanocrystalline TiN contained numerous triple junctions without any presence of amorphous regions. The width of the grain boundary remained constant at less than 1 nm as a function of boundary angle. Similarly the grain boundary structure did not change with grain size. The hardness of TiN films decreased with decreasing grain size. This behavior was modeled recently involving grain boundary sliding, which is particularly relevant in the case of hard materials such as TiN.


2004 ◽  
Vol 818 ◽  
Author(s):  
R. O. Ritchie ◽  
X.-F. Zhang ◽  
L. C. De Jonghe

AbstractThrough control of the grain-boundary structure, principally in the nature of the nanoscale intergranular films, a silicon carbide with a fracture toughness as high as 9.1 MPa.m1/2 has been developed by hot pressing β-SiC powder with aluminum, boron, and carbon additions (ABC-SiC). Central in this material development has been systematic transmission electron microscopy (TEM) and mechanical characterizations. In particular, atomic-resolution electron microscopy and nanoprobe composition quantification were combined in analyzing grain boundary structure and nanoscale structural features. Elongated SiC grains with 1 nm-wide amorphous intergranular films were believed to be responsible for the in situ toughening of this material, specifically by mechanisms of crack deflection and grain bridging. Two methods were found to be effective in modifying microstructure and optimizing mechanical performance. First, prescribed post-annealing treatments at temperatures between 1100 and 1500°C were seen to cause full crystallization of the amorphous intergranular films and to introduce uniformly dispersed nanoprecipitates within SiC matrix grains; in addition, lattice diffusion of aluminum at elevated temperatures was seen to alter grain-boundary composition. Second, adjusting the nominal content of sintering additives was also observed to change the grain morphology, the grain-boundary structure, and the phase composition of the ABC-SiC. In this regard, the roles of individual additives in developing boundary microstructures were identified; this was demonstrated to be critical in optimizing the mechanical properties, including fracture toughness and fatigue resistance at ambient and elevated temperatures, flexural strength, wear resistance, and creep resistance.


1999 ◽  
Vol 32 (1-4) ◽  
pp. 187-195 ◽  
Author(s):  
V. Sursaeva ◽  
U. Czubayko ◽  
A. Touflin

Changes of the grain boundary character distribution and texture during normal grain growth have been investigated using the SAC-SEM based method and a 4 circle X-ray texture goniometer on A1 strips with columnar structure. The microstructure of the strips consists of regions with oriented (clusters) and randomly oriented grains. All changes of microstructure are outside the clusters during normal grain growth and consequently no texture change was observed.


2007 ◽  
Vol 121-123 ◽  
pp. 1241-1244 ◽  
Author(s):  
Dong Seok Seo ◽  
Hwan Kim ◽  
Jong Kook Lee

In this study, it was demonstrated how second phases with small amount, which are hardly detected by XRD analysis, affect grain boundary dissolution and related mechanical properties of HA. All HA disks sintered at 1200 oC for 2 h in air with under moisture protection were phase pure and had Ca/P molar ratio of 1.67. Following certain period of exposure to the distilled water, the surface dissolution initiated at grain boundaries and particle loosening, subsequently resulting in decrease in mechanical properties of HA. In order to understand the dissolution mechanism, grain boundary structure of HA was identified by transmission electron microscopy (TEM) and high resolution TEM observation. From the analysis, it was found that the non-stoichiometric phase as α-tricalcium phosphate (TCP) transformed from β-TCP was existed at grain boundaries and caused surface dissolution of HA. From the XRD analysis, it was found that (211) and (112) planes of hydroxyapatite were susceptible to dissolution, whereas (300) plane was relatively stable.


2010 ◽  
Vol 62 ◽  
pp. 227-231
Author(s):  
Keijiro Hiraga ◽  
Hidehiro Yoshida ◽  
Koji Morita ◽  
Byung Nam Kim

In tetragonal zirconia, possibility is investigated of densification with finer grain sizes under the combination of doping and sintering in air. The materials used are CIP'ed compacts of 3-mol%-yttria-stabilized tetragonal zirconia (3Y-TZP) doped with a small amount of cations. For a given sintering temperature and initial density of the compacts, while the doped cations enhances densification in the latest stage of sintering, the effect is different in grain growth during densification: a doped cation tended to enhance grain growth, whereas the other cations tended to suppress grain growth. As a result, the doping of the latter cations brings about a grain size finer than that of the undoped 3Y-TZP for a given relative density.


1989 ◽  
Vol 147 ◽  
Author(s):  
Harry A. Atwater ◽  
Walter L. Brown

AbstractAmorphous Si is nucleated heterogeneously at grain boundaries during irradiation of polycrystalline Si by 1.5 MeV Xe+ ions for temperatures of 150–225°C. Following formation at grain boundaries, the amorphous Si layer grows at a rate comparable to the growth rate of a pre-existing amorphous-crystal interface, resulting in a decrease in average grain size and a marked change in the grain size distribution. The heterogeneous nucleation kinetics of amorphous Si are strongly dependent on grain boundary structure. A simple atomistic model for amorphous phase formation, which suggests that the nucleation kinetics are dependent on the point defect mobilities and grain boundary structure, is related to the experimental results.


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