Annealing Effects on the Structural Properties of Gold Films on Si by the RF Magnetron Sputtering

2005 ◽  
Vol 475-479 ◽  
pp. 3923-3926 ◽  
Author(s):  
Kyung Chul Lee ◽  
Nam Ho Kim ◽  
B.H. O ◽  
Hyoun Woo Kim
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Gold Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Effects ◽  
Au Thin Films ◽  
Scanning Electron

We have investigated the effect of annealing temperature on the structural property of Au thin films deposited on Si(100) substrate using the radio frequency (RF) magnetron sputtering technique. X-ray diffraction revealed that the relative intensities and FWHM of (111), (200), and (311) peaks increased and decreased, respectively, after thermal annealing at 600°C. Scanning electron microscopy indicated that after annealing at 600-700°C, Au structures agglomerated on Si(100) surfaces. Energy dispersive x-ray spectrometry (EDX) revealed that the agglomerated structure was composed of pure Au.

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

SIZE-INDUCED EFFECTS IN NANOSTRUCTURED NiFe2O4

2010 ◽  
Vol 24 (30) ◽  
pp. 5973-5985
Author(s):  
M. GUNES ◽  
H. GENCER ◽  
T. IZGI ◽  
V. S. KOLAT ◽  
S. ATALAY
Keyword(s):  
Electron Microscopy ◽  
Annealing Temperature ◽  
Structural Parameters ◽  
Hydrothermal Process ◽  
Lattice Parameter ◽  
Effect Of Temperature ◽  
Vibrating Sample Magnetometer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

NiFe 2 O 4 nanoparticles were successfully prepared by a hydrothermal process, and the effect of temperature on them was studied. The particles were annealed at various temperatures ranging from 413 to 1473 K. Studies were carried out using powder X-ray diffraction, scanning electron microscopy, infrared spectroscopy, differential thermal analysis, thermogravimetric analysis and a vibrating sample magnetometer. The annealing temperature had a significant effect on the magnetic and structural parameters, such as the crystallite size, lattice parameter, magnetization and coercivity.

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

Structural studies of chloride-treated RF sputtered Cd1-xMnxTe films

2004 ◽  
Vol 836 ◽  
Author(s):  
S. L. Wang ◽  
S. H. Lee ◽  
A. Gupta ◽  
A. D. Compaan
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Photovoltaic Performance ◽  
Rf Magnetron Sputtering ◽  
Band Gaps ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

ABSTRACTCd1-xMnxTe alloy films with band gaps of 1.6 ∼ 1.8 eV have been deposited by RF magnetron sputtering for solar-cell applications. The films have been treated by chloride vapors to improve the photovoltaic performance. These as-deposited and chloride-treated CdMnTe films have been investigated by Raman spectroscopy, x-ray diffraction (XRD) and scanning electron microscopy (SEM). Raman results indicate that Te and/or TeO2 exists in the annealed samples depending on anneal conditions.

Structural and Morphological Properties of HfxZr1-xO2 Thin Films Prepared by Pechini Route

2010 ◽  
Vol 644 ◽  
pp. 113-116
Author(s):  
L.A. García-Cerda ◽  
Bertha A. Puente Urbina ◽  
M.A. Quevedo-López ◽  
B.E. Gnade ◽  
Leo A. Baldenegro-Perez ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Precursor Solution ◽  
Dip Coating ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dip Coating Technique ◽  
Scanning Electron

In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm.

scholarly journals Synthesis and Catalase Mimic Activity of MnO2 Nano Powder Prepared by Hydrothermal Process

2019 ◽  
Vol 27 (2) ◽  
pp. 228-237 ◽  
Author(s):  
Rashed T. Rasheed ◽  
Sariya D. Al-Algawi ◽  
Rosul M. N.
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Annealing Temperature ◽  
Hydrothermal Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nano Powder ◽  
Atomic Force ◽  
Different Temperatures ◽  
Scanning Electron

Manganese dioxide (MnO2) nanopowder has been synthesized by hydrothermal method. MnO2 was annealed at different temperatures (250, 400, 550, 700˚C). The crystal structure and surface morphology of these nanostructures were characterized by X-ray diffraction (XRD), Atomic Force Microscope (AFM) and Scanning Electron Microscopy (SEM). The catalase mimic activity (catalytic activity) of MnO2 against hydrogen peroxide (H2O2) was studied by using the new method and found that 400˚C is the best annealing temperature.

Investigation on AZO Films Deposited by Radio-Frequency Reactive Magnetron Sputtering

2013 ◽  
Vol 320 ◽  
pp. 35-39
Author(s):  
Cheng Long Kang ◽  
Jin Xiang Deng ◽  
Min Cui ◽  
Chao Man ◽  
Le Kong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Scanning Electron

The Al2O3-doped ZnO(AZO) films were deposited on the glasses by means of RF magnetron sputtering technology. The films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Profile-system respectively. The effect of substrate temperature on the structure of the AZO films is investigated.As a result, the properties of the AZO thin films are remarkably influenced by the substrate temperature , especially in the range of 200°C to 500 °C. The film prepared at the substrate temperature of 400°C possesses the best crystalline.

Annealing induced structural changes and microcracking in Mo-Mo3Si

2002 ◽  
Vol 753 ◽  
Author(s):  
X.-L. Wang ◽  
J. H. Schneibel ◽  
Y. D. Wang ◽  
J. W. Richardson
Keyword(s):  
Electron Microscopy ◽  
Experimental Data ◽  
High Temperature ◽  
Structural Changes ◽  
Thermal Stresses ◽  
Annealing Temperature ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

ABSTRACTCast Mo-Mo3Si intermetallic composites develop microcracks after annealing at high temperature. Neutron diffraction, x-ray diffraction, composition analysis, and scanning electron microscopy have been used to characterize the structural changes induced by annealing of Mo-Mo3Si. It is shown that the observed cracking cannot be attributed to differential thermal stresses that developed on cooling from the annealing temperature. Instead, the experimental data suggest that the cracks were initiated at high temperature, possibly due to diffusion of Si atoms from supersaturated α-Mo to Mo3Si.

The Structure and Thermal Properties of ZrAlYN Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 488-489 ◽  
pp. 9-13
Author(s):  
Guang Xian ◽  
Hai Bo Zhao ◽  
Hong Yuan Fan ◽  
Hao Du
Keyword(s):  
Electron Microscopy ◽  
Thermal Properties ◽  
Magnetron Sputtering ◽  
Oxidation Resistance ◽  
Solution Phase ◽  
Solid Solution Phase ◽  
Flow Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

ZrAlYN films were prepared by magnetron sputtering at various N2/Ar flow ratio. The structure, composition and thermal properties were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectrum. The results show that the deposited ZrAlN and ZrAlYN films possessed a single NaCl-type solid solution phase. The ZrAlN film was (200) strongly predominated. The (111) peak was prominently increased in ZrAlYN films and thus the preferred orientation changed to (111) and (200) co-predomination. The crystallinity of ZrAlYN films was gradually degraded with enhanced N2/Ar flow ratio. Both ZrAlN and ZrAlYN films were exhibited a featureless fracture microstructure. The thickness of ZrAlYN films was consistently reduced due to more nitride produced on the surface of targets at higher N2/Ar flow ratio. The ZrAlYN films deposited at 1:5 N2/Ar flow ratio was proved to be the best oxidation resistance under annealing at 1000°C for 2h in air. As N2/Ar flow ratio increased, the oxidation resistance of films was inversely deteriorated due to the decreased yttrium content in films.

Effects of Annealing Temperature on Optical Properties of Bi3.4Nd0.6Ti3O12 Films by RF Magnetron Sputtering Method

2012 ◽  
Vol 503-504 ◽  
pp. 620-624
Author(s):  
Yan Zou ◽  
Qiu Xiang Liu ◽  
Yan Ping Jiang ◽  
Xin Gui Tang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Constant Thickness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures

Bi3.4Nd0.6Ti3O12 (BNT) thin films have been prepared on Si (100) substrate by RF magnetron sputtering method. The crystalline structures were studied by X-ray diffraction. The surface of the films have been observed by SEM. The reflectivity was measured by n & k Analyzer 2000 with the wavelength from 190 to 900 nm. The optical constant, thickness and the forbidden band gap were fitted. The results showed that with the annealing temperatures raised from 600 to 750 °C, the reflectivity index decreased from 2.224 to 2.039, and the forbidden band gap decreased from 3.19 to 2.99 eV. The possible mechanism of the effect of annealing temperature on the optical properties was discussed.

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