Principles of Microstructural Design in Two-Phase Systems

2007 ◽  
Vol 558-559 ◽  
pp. 827-834 ◽  
Author(s):  
Suk Joong L. Kang ◽  
Yang Il Jung ◽  
Kyoung Seok Moon
Keyword(s):  
Growth Rate ◽  
Grain Growth ◽  
Driving Force ◽  
Driving Forces ◽  
Interface Reaction ◽  
Processing Parameters ◽  
Microstructural Development ◽  
Two Phase ◽  
Interface Mobility ◽  
Microstructural Design

When a polycrystal is in chemical equilibrium, the microstructure evolves as a result of grain growth under the capillary driving force arising from the interface curvature. As the growth rate of an individual grain is the product of the interface mobility and the driving force, the growth of the grain can be controlled by changing these two parameters. According to crystal growth theories, the growth of a crystal with a rough interface is governed by diffusion and its interface mobility is constant. In-contrast, the growth of a crystal with faceted interfaces is governed by the interface reaction and diffusion for driving forces below and above a critical value, respectively. As the growth rate is nonlinear for the regime of interface reaction control, the grain growth is nonstationary with annealing time. Calculations reveal that the types of nonstationary growth behavior including pseudo-normal, abnormal, and stationary are governed by the relative value of the maximum driving force, gmax, to the critical driving force for appreciable growth, gc. Recent experimental observations showing the effects of critical processing parameters on microstructural development also support the theoretical prediction. The principles of microstructural design are deduced in terms of the coupling effects of gmax and gc.

scholarly journals Grain Growth Control of Dielectric and Magnetic Ceramics

Ceramist ◽  
2021 ◽  
Vol 24 (3) ◽  
pp. 260-272
Author(s):  
Kyoung-Seok Moon
Keyword(s):  
Growth Rate ◽  
Grain Growth ◽  
Driving Force ◽  
Growth Control ◽  
Interface Reaction ◽  
Ceramic Materials ◽  
Interface Energy ◽  
Diffusion Control ◽  
Interface Mobility ◽  
Interface Curvature

The sintering process transported the atoms in the materials by decreasing the total interface energy. The microstructure changes as a result of grain growth and densification under the capillary driving force due to the interface curvature among grains. The grain growth rate is expressed as the product of the interface mobility and the driving force. According to grain growth theories, the mobility of the interface governed by diffusion control is constant but interface mobility is nonlinear when the movement of an interface is governed by interface reaction. As the growth rate is nonlinear for the regime of interface reaction control, the grain growth is nonstationary with annealing time. The microstructure can be controlled by changing the growth rate of an individual grain with the correlation between the maximum driving force and the critical driving force for appreciable growth. The present paper discusses applications of the principle in the fabrication of dielectric and magnetic ceramic materials.

Step Free Energy Change and Microstructural Development in BaTiO3-SiO2

2007 ◽  
Vol 352 ◽  
pp. 25-30 ◽  
Author(s):  
Jaem Yung Chang ◽  
Suk Joong L. Kang
Keyword(s):  
Free Energy ◽  
Grain Growth ◽  
Driving Force ◽  
Growth Behavior ◽  
Abnormal Grain Growth ◽  
Free Energy Change ◽  
Energy Change ◽  
Microstructural Development ◽  
Two Phase ◽  
Grain Growth Behavior

The effect of step free energy on the grain growth behavior in a liquid matrix is studied in a model system BaTiO3-SiO2. BaTiO3-10SiO2 (mole %) powder compacts were sintered at 1280°C under various oxygen partial pressures (PO2), 0.2, ~ 10-17 and ~ 10-24 atm. As the step free energy decreases with the reduction of PO2, it was possible to observe the change in growth behavior with the reduction of the step free energy. At PO2 = 0.2 atm, essentially no grain growth (stagnant grain growth) occurred during sintering up to 50 h. At PO2 ≈ 10-17 atm, abnormal grain growth followed stagnant grain growth during extended sintering (incubation of abnormal grain growth). At PO2 ≈ 10-24 atm, normal grain growth occurred. These changes in growth behavior with PO2 and the step free energy reduction are explained in terms of the change in the critical driving force for appreciable growth relative to the maximum driving force for grain growth. The present experimental results provide an example of microstructure control in solid-liquid two- phase systems via step free energy change.

Microstructural Design and Control of Silicon Nitride Ceramics

MRS Bulletin ◽  
1995 ◽  
Vol 20 (2) ◽  
pp. 38-41 ◽  
Author(s):  
Mamoru Mitomo ◽  
Naoto Hirosaki ◽  
Hideki Hirotsuru
Keyword(s):  
Mechanical Properties ◽  
Grain Size ◽  
Phase Transformation ◽  
Silicon Nitride ◽  
Grain Growth ◽  
Processing Parameters ◽  
Microstructural Development ◽  
Nitride Ceramics ◽  
Microstructural Design ◽  
And Control

The improvement of mechanical properties by microstructural control has been one of the main topics of interest in the development of silicon nitride ceramics. Toughening, by developing an in situ composite or self-reinforced microstructure, has attracted particular attention.Microstructural design is a key factor in the optimization of processing parameters. The microstructures of sintered materials are composed of silicon nitride grains and grain boundaries, which can be either crystalline, amorphous, or partially crystalline, depending on the composition, amount of sintering additives, and processing parameters. Silicon nitride ceramics have been fabricated with an addition of metal oxides and rare-earth oxides that form a liquid phase during sintering and accelerate grain boundary diffusion. The effect of composition of the glassy phase on the mechanical properties of ceramics is presented by Becher et al. and Hoffmann elsewhere in this issue. This article focuses specifically on the design and control of grain size.As it is well recognized, many processing parameters affect grain growth behavior and the resulting microstructure. During sintering, the α- to β-phase transformation leads to a self-reinforcing microstructure on account of the anisotropic grain growth of the stable hexagonal β- Si3N4 phase. Therefore, α-rich powders are widely used for starting materials. Phase transformation accelerates anisotropic grain growth, resulting in an increase in the fracture toughness of Si3N4 ceramics. Kang and Han discuss the effect of phase transformation on nucleation and grain growth in an article in this issue. The effect of the grain-size distribution on microstructural development is described in this article, based on studies conducted mostly with β-Si3N4 powders.

Grain Boundary Diffusion Controlled Precipitation as a Model For thin Film Reactions

1993 ◽  
Vol 311 ◽  
Author(s):  
K. Barmak ◽  
K.K. Coffey
Keyword(s):  
Thin Film ◽  
Driving Force ◽  
Boundary Diffusion ◽  
Chemical Potential ◽  
Driving Forces ◽  
Transport Model ◽  
Interface Reaction ◽  
Grain Structure ◽  
Phase Selection ◽  
Reaction Barriers

ABSTRACTIn order to arrive at a model for nucleation in the reaction of polycrystalline thin films, we have made use of a transport model that combines atom transport across interface reaction barriers with transport along grain boundaries. Through this transport model, the boundary chemical potential, μIi, and a characteristic length Li for each specie are defined. Li and the ratio of grain size to Li determine the spatial variation and the time evolution of the boundary chemical potential respectively. Nucleation of the product phase is modeled as a process whose driving force is determined by these position dependent (and time dependent) boundary chemical potentials. Thus thin film reactions become similar to precipitation from bulk homogeneous supersaturated solid solutions. Numerical calculations, however, show that boundary diffusion results in low “effective” driving forces for nucleation which can lead to heterogeneous nucleation of even the first phase. The model provides a new approach to phase selection by re-evaluation of the driving force and considers the effect of product and reactant grain structure to be fundamental to the reaction process.

Lengthening Kinetics of Pro-Eutectoid Ferrite Ledge in Fe-C Alloy under Interface-Diffusion Mixed Control Mode

2011 ◽  
Vol 172-174 ◽  
pp. 1134-1139 ◽  
Author(s):  
Zhi Gang Yang ◽  
Zhao Dong Li ◽  
Zhi Yuan Liu ◽  
Zhen Qing Liu ◽  
Zhi Xin Xia ◽  
...  
Keyword(s):  
Growth Rate ◽  
Carbon Concentration ◽  
Driving Force ◽  
Carbon Diffusion ◽  
Control Mode ◽  
Interface Migration ◽  
Interface Mobility ◽  
Ferrite Growth ◽  
Mixed Control ◽  
Steady Level

A mixed control mode is developed to model the ledge growth of pro-eutectoid ferrite, considering coupled effects of migration of austenite/ferrite interface and carbon diffusion in austenite. Carbon concentration of austenite at the austenite/ferrite interface increases from the bulk carbon concentration to a steady level, which is lower than that in local equilibrium, during the ferrite growth process. Correspondingly, ferrite grows rapidly at the beginning since all the driving force of ferrite transformation is dissipated on the interface migration. In the later stage of isothermal transformation, the growth rate of ferrite decreases towards a steady level since a part of driving force is dissipated on carbon diffusion in austenite. The effect of interface migration on ferrite growth rate by changing the interface mobility is emphatically discussed. In the case of the low interface mobility, the growth rate of ferrite is very small while the growth is dominated by the carbon diffusion ability in the case of large interface mobility. When a medium interface mobility is obtained, the growth rate of ferrite may reach a maximum value, which exceed the limitation of diffusion control and interface control modes. After comparing the modeled growth rate of ferrite with the experimental data of 0.11-0.49 wt% C alloy at 973-1113 K, the pre-expontential factor (M0) of interface mobility is estimated within the range of 0.1-1 mol m J-1s-1, around the value 0.5 mol m J-1s-1theoretically estimated.

Microstructural development of SCS-6 SiC fibers during high temperature creep

1998 ◽  
Vol 13 (7) ◽  
pp. 1853-1860 ◽  
Author(s):  
Lucille A. Giannuzzi ◽  
Charles A. Lewinsohn ◽  
Charles E. Bakis ◽  
Richard E. Tressler
Keyword(s):  
High Temperature ◽  
Grain Growth ◽  
Creep Deformation ◽  
Phase Region ◽  
Microstructural Development ◽  
High Temperature Creep ◽  
Two Phase ◽  
Excess Carbon ◽  
Sic Fibers ◽  
Temperature Creep

Microstructural development of SCS-6 SiC fibers induced by creep deformation at 1400 °C is presented. Grain growth occurs in all SiC regions of the fiber during creep. Portions of the SiC4 region transform from βSiC to αSiC growing at the expense of the βSiC. The SiC1 through SiC3 regions of the fiber consist of a distinct (C + βSiC) two-phase region. The grain growth of the βSiC grains in the two-phase region is not as extensive as in the SiC4 region, suggesting that the presence of excess carbon may inhibit the growth of βSiC.

scholarly journals Driving forces on dislocations: finite element analysis in the context of the non-singular dislocation theory

2021 ◽  
Author(s):  
Xiandong Zhou ◽  
Christoph Reimuth ◽  
Peter Stein ◽  
Bai-Xiang Xu
Keyword(s):  
Finite Element ◽  
Dislocation Loop ◽  
Driving Force ◽  
Complex Geometry ◽  
Driving Forces ◽  
Singular Solutions ◽  
Dislocation Model ◽  
Configurational Force ◽  
Element Analysis ◽  
Dislocation Configuration

AbstractThis work presents a regularized eigenstrain formulation around the slip plane of dislocations and the resultant non-singular solutions for various dislocation configurations. Moreover, we derive the generalized Eshelby stress tensor of the configurational force theory in the context of the proposed dislocation model. Based on the non-singular finite element solutions and the generalized configurational force formulation, we calculate the driving force on dislocations of various configurations, including single edge/screw dislocation, dislocation loop, interaction between a vacancy dislocation loop and an edge dislocation, as well as a dislocation cluster. The non-singular solutions and the driving force results are well benchmarked for different cases. The proposed formulation and the numerical scheme can be applied to any general dislocation configuration with complex geometry and loading conditions.

scholarly journals Evolutionary economics: Crisis, transformation and metamorphosis

2021 ◽  
pp. 1-8
Author(s):  
Milan Zeleny
Keyword(s):  
Growth Rate ◽  
Productivity Growth ◽  
Driving Force ◽  
Evolutionary Economics ◽  
Regional Economies ◽  
Economic Evolution ◽  
Economic Sectors ◽  
Advanced Economies ◽  
First Time

Most world economies are undergoing fundamental transformations of economic sectors, shifting their employed workforce through the secular sequence of (1. Agriculture⟶2. Industry⟶3. Services⟶4. Government). The productivity growth rate is the driving force. Most advanced economies have reached the final stages of the sequence. Assorted recessions, crises and stagnations are simply cofluent, accompanying phenomena. Crises might be cyclical, but economic evolution is unidirectional. Traditional economics can hardly distinguish phenomena of crisis from those of the transformation. Because there is no “fifth sector”, some economies are entering the phase of metamorphosis, for the first time in history. Metamorphosis is manifested through deglobalization, relocalization and autonomization of local and regional economies. We are entering the Age of Entrepreneurship.

scholarly journals Relevance of processing parameters for grain growth of metal halide perovskites with nanoimprint

2021 ◽  
Vol 127 (9) ◽  
Author(s):  
Andre Mayer ◽  
Tobias Haeger ◽  
Manuel Runkel ◽  
Johannes Rond ◽  
Johannes Staabs ◽  
...  
Keyword(s):  
Grain Size ◽  
Grain Growth ◽  
Secondary Growth ◽  
Processing Parameters ◽  
Post Processing ◽  
Perovskite Layer ◽  
Processing Step ◽  
Similar Preparation ◽  
Materials Used ◽  
Log Normal

AbstractThe quality and the stability of devices prepared from polycrystalline layers of organic–inorganic perovskites highly depend on the grain sizes prevailing. Tuning of the grain size is either done during layer preparation or in a post-processing step. Our investigation refers to thermal imprint as the post-processing step to induce grain growth in perovskite layers, offering the additional benefit of providing a flat surface for multi-layer devices. The material studied is MAPbBr3; we investigate grain growth at a pressure of 100 bar and temperatures of up to 150 °C, a temperature range where the pressurized stamp is beneficial to avoid thermal degradation. Grain coarsening develops in a self-similar way, featuring a log-normal grain size distribution; categories like ‘normal’ or ‘secondary’ growth are less applicable as the layers feature a preferential orientation already before imprint-induced grain growth. The experiments are simulated with a capillary-based growth law; the respective parameters are determined experimentally, with an activation energy of Q ≈ 0.3 eV. It turns out that with imprint as well the main parameter relevant to grain growth is temperature; to induce grain growth in MAPbBr3 within a reasonable processing time a temperature of 120 °C and beyond is advised. An analysis of the mechanical situation during imprint indicates a dominance of thermal stress. The minimization of elastic energy and surface energy together favours the development of grains with (100)-orientation in MaPbBr3 layers. Furthermore, the experiments indicate that the purity of the materials used for layer preparation is a major factor to achieve large grains; however, a diligent and always similar preparation of the layer is equally important as it defines the pureness of the resulting perovskite layer, intimately connected with its capability to grow. The results are not only of interest to assess the potential of a layer with respect to grain growth when specific temperatures and times are chosen; they also help to rate the long-term stability of a layer under temperature loading, e.g. during the operation of a device.

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