RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.
2008 ◽
Vol 600-603
◽
pp. 1107-1110
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Keyword(s):
We fabricated a 0.5-μm-gate MESFET on a bulk 4H-SiC semi-insulating substrate using ion implantation for the channel and contact regions. Our device design used a thin, highly doped channel layer, which was implanted at single energy to improve the device’s RF characteristics. The electrical characteristics of the ion-implanted MESFET annealed at 1700°C were better than those of the ion-implanted MESFET annealed at 1300°C. The fabricated ion-implanted MESFET has a maximum transconductance of 32.8 mS/mm and an fT/fmax of 9.1/26.2 GHz. The saturated output power was 26.2 dBm (2.1 W/mm) at 2 GHz. These values were the same as those of the conventional epitaxial MESFET with a recessed gate.
2007 ◽
Vol 556-557
◽
pp. 803-806
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2016 ◽
Vol 858
◽
pp. 418-421
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1982 ◽
Vol 40
◽
pp. 460-461
2018 ◽
Vol 10
(9)
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pp. 999-1010
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Keyword(s):