A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer

Author(s):  
Toshiyuki Oishi ◽  
Kaito Ito
2008 ◽  
Vol 600-603 ◽  
pp. 1107-1110 ◽  
Author(s):  
S. Katakami ◽  
Shuichi Ono ◽  
Manabu Arai

We fabricated a 0.5-μm-gate MESFET on a bulk 4H-SiC semi-insulating substrate using ion implantation for the channel and contact regions. Our device design used a thin, highly doped channel layer, which was implanted at single energy to improve the device’s RF characteristics. The electrical characteristics of the ion-implanted MESFET annealed at 1700°C were better than those of the ion-implanted MESFET annealed at 1300°C. The fabricated ion-implanted MESFET has a maximum transconductance of 32.8 mS/mm and an fT/fmax of 9.1/26.2 GHz. The saturated output power was 26.2 dBm (2.1 W/mm) at 2 GHz. These values were the same as those of the conventional epitaxial MESFET with a recessed gate.


2021 ◽  
Vol 71 ◽  
pp. 101881
Author(s):  
Therese M.-L. Andersson ◽  
Tor Åge Myklebust ◽  
Mark J. Rutherford ◽  
Bjørn Møller ◽  
Isabelle Soerjomataram ◽  
...  

2021 ◽  
Vol 21 (1) ◽  
Author(s):  
Steve Kanters ◽  
Mohammad Ehsanul Karim ◽  
Kristian Thorlund ◽  
Aslam Anis ◽  
Nick Bansback

Abstract Background The use of individual patient data (IPD) in network meta-analyses (NMA) is rapidly growing. This study aimed to determine, through simulations, the impact of select factors on the validity and precision of NMA estimates when combining IPD and aggregate data (AgD) relative to using AgD only. Methods Three analysis strategies were compared via simulations: 1) AgD NMA without adjustments (AgD-NMA); 2) AgD NMA with meta-regression (AgD-NMA-MR); and 3) IPD-AgD NMA with meta-regression (IPD-NMA). We compared 108 parameter permutations: number of network nodes (3, 5 or 10); proportion of treatment comparisons informed by IPD (low, medium or high); equal size trials (2-armed with 200 patients per arm) or larger IPD trials (500 patients per arm); sparse or well-populated networks; and type of effect-modification (none, constant across treatment comparisons, or exchangeable). Data were generated over 200 simulations for each combination of parameters, each using linear regression with Normal distributions. To assess model performance and estimate validity, the mean squared error (MSE) and bias of treatment-effect and covariate estimates were collected. Standard errors (SE) and percentiles were used to compare estimate precision. Results Overall, IPD-NMA performed best in terms of validity and precision. The median MSE was lower in the IPD-NMA in 88 of 108 scenarios (similar results otherwise). On average, the IPD-NMA median MSE was 0.54 times the median using AgD-NMA-MR. Similarly, the SEs of the IPD-NMA treatment-effect estimates were 1/5 the size of AgD-NMA-MR SEs. The magnitude of superior validity and precision of using IPD-NMA varied across scenarios and was associated with the amount of IPD. Using IPD in small or sparse networks consistently led to improved validity and precision; however, in large/dense networks IPD tended to have negligible impact if too few IPD were included. Similar results also apply to the meta-regression coefficient estimates. Conclusions Our simulation study suggests that the use of IPD in NMA will considerably improve the validity and precision of estimates of treatment effect and regression coefficients in the most NMA IPD data-scenarios. However, IPD may not add meaningful validity and precision to NMAs of large and dense treatment networks when negligible IPD are used.


2014 ◽  
Vol 536-537 ◽  
pp. 1431-1434 ◽  
Author(s):  
Ying Zhu ◽  
Yin Cheng Zhang ◽  
Shun He Qi ◽  
Zhi Xiang

Based on the molecular dynamics (MD) theory, in this article, we made a simulation study on titanium nanometric cutting process at different cutting depths, and analyzed the changes of the cutting depth to the effects on the work piece morphology, system potential energy, cutting force and work piece temperature in this titanium nanometric cutting process. The results show that with the increase of the cutting depth, system potential energy, cutting force and work piece temperature will increase correspondingly while the surface quality of machined work piece will decrease.


2014 ◽  
Vol 28 (05) ◽  
pp. 1450038 ◽  
Author(s):  
MAHDI VADIZADEH ◽  
MORTEZA FATHIPOUR ◽  
GHAFAR DARVISH

One of the main shortcomings in a field effect diode (FED) is its scaling. Use of an oxide layer in the channel is proposed to enhance the control of the gate on the channel carriers. This is the so-called silicon on raised insulator FED (SORI-FFD) structure. The Shockley–Read–Hall (SRH) mechanism is one of the main components of leakage current in FED devices. The potential induced by the gates in the OFF-state of a SORI-FFD, is larger than that induced by the gates of a regular FED. This reduces, SRH recombination rate. Hence, OFF-state characteristics of the SORI-FED device improves. We evaluate the impact of band-to-band tunneling (BTBT) on the electrical characteristics of Modified FED (M-FED).We show that for channel lengths of 35 nm and lower this device does not turn off. While, the proposed structure makes device channel length scaling possible down to 15 nm. We will also compare electrical characteristics of SORI-FED and M-FED using three metrics: gate delay time versus channel length, gate delay time versus I ON /I OFF ratio and energy-delay product versus channel length. Benchmarking results show the proposed FED structure provides improvement in I ON /I OFF ratio and holds promise for future logic transistor applications.


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