Deposition of Titanium Nitride Thin Films onto Silicon by RF Reactive Magnetron Sputtering

2009 ◽  
Vol 609 ◽  
pp. 117-121 ◽  
Author(s):  
Nadia Saoula ◽  
K. Henda ◽  
R. Kesri
Keyword(s):  
Magnetron Sputtering ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
Gas Mixture ◽  
Substrate Bias Voltage ◽  
Tin Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ar Gas ◽  
Deposited Films

The properties of TiN films deposited by magnetron sputtering are related to their deposition conditions. The elaboration of our films has been carried out by RF-Magnetron Sputtering (13.56 MHz) from a titanium metallic target in reactive N2/Ar gas mixture. The main variables investigated are the composition of the Ar/N2 gas mixture, the total pressure, the deposition time, the discharge power but in this work the attention is given to the effect of the substrate bias voltage. A study is carried out the effects of these variations on the film growth rates, the film thickness and the properties of TiN films. The deposited films were characterized by energy dispersive spectroscopy (EDS), and observed by means of atomic force microscopy (AFM).

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

Mechanical Properties of CrN Films Deposited by Magnetron Sputtering Method

Tribology ◽  
2006 ◽  
Author(s):  
A. H. Jayatissa ◽  
D. Wagner ◽  
S. Sorin ◽  
N. X. Randall
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Film Properties ◽  
Adhesion Properties ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Mechanical Coating ◽  
Deposition Conditions

The mechanical properties of CrN films coated by radio frequency (rf) magnetron sputtering method were investigated. CrN films were coated on stainless steel, silicon wafer and glass substrates using sputtering of a Cr target in nitrogen ambient. The films were coated by varying the deposition temperature, nitrogen partial pressure and rf power density. The films coated were characterized by nanoindentation method, microhardness, optical, and corrosion tests. In order to use CrN as mechanical coating material, the surface roughness, hardness and adhesion properties have to be determined. The film properties were measured using atomic force microscopy and nanoindentation method and analyzed as a function of deposition conditions. It was found that these properties can be varied by changing the deposition conditions.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

Influence of the Substrate Bias Voltage on the Structure of Rutile TiO2 Films Prepared by Dual Cathode DC Unbalanced Magnetron Sputtering

2012 ◽  
Vol 506 ◽  
pp. 82-85
Author(s):  
P. Kasemanankul ◽  
N. Witit-Anun ◽  
S. Chaiyakun ◽  
P. Limsuwan
Keyword(s):  
Crystal Structure ◽  
Magnetron Sputtering ◽  
Grazing Incidence ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Force Microscopy ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Xrd Patterns ◽  
Deposited Films

Rutile TiO2 films are normally used as biomaterial that synthesized on unheated stainless steel type 316L and glass slide substrates by dual cathode DC unbalanced magnetron sputtering. The influence of the substrate bias voltages (Vsb), from 0 V to-150V, on the structure of the as-deposited films was investigated. The crystal structure was characterized by grazing-incidence X-ray diffraction (GIXRD) technique, the films thickness and surface morphology was evaluated by atomic force microscopy (AFM) technique, respectively. The results show that the as-deposited films were transparent and have high transmittance in visible regions. The crystal structure of as-deposited films show the XRD patterns of rutile (110) with Vsb at 0V and shifted to rutile (101) with increasing Vsb. The films roughness (Rrms) and the thickness were 3.0 nm to 5.7 nm and 420 nm to 442 nm, respectively.

Growth of AlN Films on Silicon Substrates by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 602-603 ◽  
pp. 574-577
Author(s):  
Jian Huang ◽  
Ke Tang ◽  
Hui Min Yang ◽  
Mei Ai Lin ◽  
Lei Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Growth Parameters ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
Gas Mixture ◽  
Silicon Substrates ◽  
Polycrystalline Aluminum ◽  
Preparation Conditions ◽  
Ar Gas

Polycrystalline aluminum nitride (AlN) films were deposited on Si (111) substrates by radio frequency (RF) magnetron sputtering method in an nitrogen (N2) + argon (Ar) gas mixture. The effect of the preparation conditions- sputtering pressure (p), sputtering power (w), gas mixture (Ar/N2) and post-deposition annealing treatment -on the properties of AlN films were investigated by means of X-ray diffraction (XRD). Highly c-axis oriented AlN films were obtained with optimized growth parameters: p=0.3Pa, w=400w and Ar/N2=2.

Influence of Sputtering Power on Structural and Optical Properties of ZnO Films Fabricated by RF Magnetron Sputtering

2014 ◽  
Vol 1053 ◽  
pp. 325-331
Author(s):  
Yang Zhou ◽  
Hong Fang Zheng ◽  
Guang Zhao ◽  
Man Li ◽  
Bao Ting Liu
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Light Region ◽  
Sputtering Power ◽  
Average Transmission

ZnO thin film has been fabricated on sapphire substrate (0001) using RF magnetron sputtering at room temperature. The influence of sputtering power ranging from 10 W to 70 W on the microstructural and optical properties of ZnO films is investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), ultraviolet-visible spectrophotometer. The AFM results show that with the increase of sputtering power, the size of ZnO crystalline increases first, then decrease and the maximum grain size occurs at 50 W. The XRD measurements indicate that the ZnO films with wurtzite structure are highly c-axis orientation and the film fabricated at 50 W has the best crystalline quality. Optical transmission spectra of the ZnO samples demonstrate that the ZnO film obtained at 50 W has the higher average transmission (above 90%) in the visible-light region and its optical band gap is 3.26 eV.

SiC Coatings Deposited by RF Magnetron Sputtering

2007 ◽  
Vol 280-283 ◽  
pp. 1309-1312 ◽  
Author(s):  
Hui Dong Tang ◽  
Shou Hong Tan ◽  
Zheng Ren Huang
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Force Microscopy ◽  
Atomic Force ◽  
Amorphous Sic ◽  
Surface Morphologies ◽  
Sic Coatings

Amorphous SiC coatings were deposited by RF magnetron sputtering from a sintered SiC target onto Si(100) substrate at room temperature. The influence of RF power on the surface morphology and the RMS surface roughness of the resulting SiC coatings was studied by using atomic force microscopy. Two types of surface morphologies were obtained. The corresponding forming mechanisms were also discussed.

Effects of Growth Temperature on the Structural Properties of Zinc Oxide Nanograins Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 500-504
Author(s):  
N. Ameera ◽  
A. Shuhaimi ◽  
S. Najwa ◽  
K.M. Hakim ◽  
M. Mazwan ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force

Nanograins zinc oxide (ZnO) withc-axis preferred orientation was deposited on glass substrates by RF magnetron sputtering. It was performed with a ZnO target with 99.999% purity at RF power of 200 W. The deposition was carried out in argon and oxygen ambient at the ratio flow-rates of 10 and 5 sccm respectively, with total deposition time of 1 hour. The films were grown atgrowth temperatures were specified at RT, 100, 200, 300, 400 and 500°C. The effects of the growth temperature on the ZnO structural property was investigated by x-ray diffraction (XRD). The best ZnO crystalline quality obtained at growth temperature, TGof 300°C was further characterized by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM).

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