In-Grown Stacking Faults Identified in 4H-SiC Epilayers Grown at High Growth Rate

2010 ◽  
Vol 645-648 ◽  
pp. 287-290 ◽  
Author(s):  
Gan Feng ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
Emission Peak ◽  
Formation Model ◽  
Intensity Mapping ◽  
Transmission Electron ◽  
Pl Emission

In-grown stacking faults (IGSFs) in thick 4H-SiC epilayers grown at high growth rates have been characterized by micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping. Strong PL emissions from the IGSFs are observed even at room temperature. Three kinds of IGSFs have been identified in the samples based on the micro-PL spectra. Each IGSF shows the specific PL emission peak located at 460 nm, 480 nm, and 500 nm, respectively. The shapes, distributions, and densities of IGSFs in the epilayers are revealed by the micro-PL intensity mapping. The stacking sequences of three IGSFs have been determined as (4,4), (3,5), and (6,2) in the Zhadonov’s notation, respectively, by high-resolution transmission electron microscopy observations. Three identified IGSFs are then classified as quadruple Shockley SFs, triple Shockley SFs, and double Shockley SFs, respectively, based on the shear formation model.

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

2016 ◽  
Vol 858 ◽  
pp. 173-176 ◽  
Author(s):  
Hideyuki Uehigashi ◽  
Keisuke Fukada ◽  
Masahiko Ito ◽  
Isaho Kamata ◽  
Hiroaki Fujibayashi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Epitaxial Growth ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
X Ray ◽  
Crystalline Defects ◽  
Transmission Electron

We have developed a single-wafer vertical epitaxial reactor which realizes high-throughput production of 4H-SiC epitaxial layer (epilayer) with a high growth rate [1,2]. In this paper, in order to evaluate the crystalline defects which can affect the characteristics of devices, we investigated the formation of variety of in-grown stacking faults (SFs) in detail. Synchrotron X-ray topography, photoluminescence (PL) and transmission electron microscopy are employed to analyze the SFs and the origins of the SF formation are discussed. The result in reducing in-grown SFs in fast epitaxial growth is also shown.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers

2018 ◽  
Vol 924 ◽  
pp. 155-159
Author(s):  
Zhe Li ◽  
Tao Ju ◽  
Bao Shun Zhang ◽  
Xuan Zhang ◽  
Li Guo Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Room Temperature ◽  
Stacking Faults ◽  
Step Flow ◽  
Transmission Electron ◽  
Step Flow Growth ◽  
Koh Etching ◽  
Low Temperature Photoluminescence

In-grown stacking faults (IGSFs) generated in 4H-SiC epilayers were characterized. Melted KOH etching, room-temperature cathodoluminescence, low-temperature photoluminescence and cross-section transmission electron microscopy was conducted to investigate the propagation of the IGSFs in the down-stream region of a 3C inclusion. It was found that the SFs could extend, close and convert during the epitaxial growth. The origin of these IGSFs were attributed to the interference introduced by the 3C inclusion to the step-flow growth, and the propagating behaviors of these IGSFs were discussed.

Transmission electron microscope investigation of indentation induced dislocation configurations on the (001) GaSb face

1994 ◽  
Vol 209 (3) ◽  
Author(s):  
J. Doerschel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Room Temperature ◽  
Stacking Faults ◽  
Electron Microscope Investigation ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Induced Dislocation

AbstractDislocation configurations induced by room temperature microindentations on the (001) face of GaSb (undoped and Te-doped) have been studied using high voltage transmission electron microscopy. Perfect and partial dislocations could be found in all four arms of the dislocation rosette around the indent. Microtwins and rarely single stacking faults are associated with the partials. Contrary to other binary III–V compounds, an “inverse” glide prism along the [1[unk]0]/[[unk]10] rosette arms is created and it is bounded by {111}

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer

2009 ◽  
Vol 615-617 ◽  
pp. 67-72 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Masahiko Ito ◽  
Isaho Kamata ◽  
Masahiro Nagano
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Epitaxial Growth ◽  
High Growth ◽  
High Growth Rate ◽  
Extended Defects ◽  
Screw Dislocations ◽  
X Ray ◽  
Transmission Electron

The transfer and generation of extended defects in 4H-SiC epitaxial growth at a high growth rate are examined. An epilayer with virtually no basal plane dislocations (BPDs) is obtained using 4º off Si-face substrates, although the formation of 3C-polytype inclusions is occasionally observed. The behavior of BPDs and threading screw dislocations (TSDs) in epitaxial growth is also investigated by X-ray topography and transmission electron microscopy, and the propagation of BPDs and conversion and generation of TSDs in the epilayers are discussed.

Spatial Profiling of Planar Defects in 4H-SiC Epilayers Using Micro-Photoluminescence Mapping

2009 ◽  
Vol 615-617 ◽  
pp. 245-250 ◽  
Author(s):  
Gan Feng ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Low Temperature ◽  
Emission Band ◽  
Room Temperature ◽  
Stacking Faults ◽  
Planar Defects ◽  
Pl Spectra ◽  
Intensity Mapping ◽  
Spatial Profiling ◽  
Pl Emission ◽  
Pl Intensity

The micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping have been utilized to investigate the planar defects, stacking faults (SFs), in 4H-SiC epilayers. Strong PL emissions from the SFs are observed even at room temperature. It is found that each kind of SF shows the distinct PL emission behaviours. Three kinds of SFs: intrinsic Frank SFs, double Shockley SFs, and in-grown SFs, have been identified in the samples based on the micro-PL spectra. At the same time, the micro-PL intensity mapping at the emission band of each SF has been performed to spatially profile the SFs. The shapes, distributions, and densities of SFs in the epilayers are then presented. The PL emission behaviours of each SF at low temperature are also studied.

Three-Dimensional Zinc Oxide Nanorod Networks

2009 ◽  
Vol 79-82 ◽  
pp. 457-460
Author(s):  
Hui Feng Li ◽  
Jian Wang ◽  
Yun Hua Huang ◽  
Yue Zhang
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Three Dimensional ◽  
Growth Direction ◽  
Emission Peak ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Cvd Method ◽  
Transmission Electron

Three-dimensional (3D) ZnO nanorod networks were synthesized through the direct evaporation of metal zinc with high purity via a chymical evaporation deposition (CVD) method in Ar and O2 at 910 °C without any catalyst. The nanorod networks of as-synthesized ZnO were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD). The branches within one network show very regular orientation relationships: either perpendicular or parallel to each other. The nanorods follow a growth direction [0001]. Photoluminescence (PL) spectroscopy were measured at room temperature and showed the different PL features of other nanostructures. Two typical emission peaks at -401 nm and at 452-495 nm were observed. Specially, the emission peak at 452-495 nm includes four subordinate peaks.

Scanning and Transmission Electron Microscopy of Human Red Blood Cells

1969 ◽  
Vol 27 ◽  
pp. 44-45
Author(s):  
A.J. Tousimis ◽  
T.R. Padden
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Blood Cells ◽  
Room Temperature ◽  
Type Specimen ◽  
New Combination ◽  
Human Red Blood Cells ◽  
Transmission Electron ◽  
Microscope Slides ◽  
Scanning Electron

The size, shape and surface morphology of human erythrocytes (RBC) were examined by scanning electron microscopy (SEM), of the fixed material directly and by transmission electron microscopy (TEM) of surface replicas to compare the relative merits of these two observational procedures for this type specimen.A sample of human blood was fixed in glutaraldehyde and washed in distilled water by centrifugation. The washed RBC's were spread on freshly cleaved mica and on aluminum coated microscope slides and then air dried at room temperature. The SEM specimens were rotary coated with 150Å of 60:40- gold:palladium alloy in a vacuum evaporator using a new combination spinning and tilting device. The TEM specimens were preshadowed with platinum and then rotary coated with carbon in the same device. After stripping the RBC-Pt-C composite film, the RBC's were dissolved in 2.5N HNO3 followed by 0.2N NaOH leaving the preshadowed surface replicas showing positive topography.

Formation of Dislocation Channels in Neutron Irradiated Molybdenum

1972 ◽  
Vol 30 ◽  
pp. 672-673
Author(s):  
S. Mahajan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ambient Temperature ◽  
Room Temperature ◽  
Channel Formation ◽  
Early Stages ◽  
Transmission Electron ◽  
Three Stages ◽  
Two Stages ◽  
Polycrystalline Molybdenum

The evolution of dislocation channels in irradiated metals during deformation can be envisaged to occur in three stages: (i) formation of embryonic cluster free regions, (ii) growth of these regions into microscopically observable channels and (iii) termination of their growth due to the accumulation of dislocation damage. The first two stages are particularly intriguing, and we have attempted to follow the early stages of channel formation in polycrystalline molybdenum, irradiated to 5×1019 n. cm−2 (E > 1 Mev) at the reactor ambient temperature (∼ 60°C), using transmission electron microscopy. The irradiated samples were strained, at room temperature, up to the macroscopic yield point.Figure 1 illustrates the early stages of channel formation. The observations suggest that the cluster free regions, such as A, B and C, form in isolated packets, which could subsequently link-up to evolve a channel.

TEM processing procedure for a bacillus organism grown on solid media

1990 ◽  
Vol 48 (3) ◽  
pp. 624-625
Author(s):  
Jane Payne ◽  
Philip Coudron
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Fume Hood ◽  
Vacuum Aspiration ◽  
Solid Media ◽  
Transmission Electron ◽  
Solid Agar ◽  
Processing Procedure ◽  
Agar Media ◽  
Rat Bone

This transmission electron microscopy (TEM) procedure was designed to examine a gram positive spore-forming bacillus in colony on various solid agar media with minimal artifact. Cellular morphology and organization of colonies embedded in Poly/Bed 812 resin (P/B) were studied. It is a modification of procedures used for undecalcified rat bone and Stomatococcus mucilaginosus.Cultures were fixed and processed at room temperature (RT) under a fume hood. Solutions were added with a Pasteur pipet and removed by gentle vacuum aspiration. Other equipment used is shown in Figure 3. Cultures were fixed for 17-18 h in 10-20 ml of RT 2% phosphate buffered glutaraldehyde (422 mosm/KgH2O) within 5 m after removal from the incubator. After 3 (30 m) changes in 0.15 M phosphate buffer (PB = 209-213 mosm/KgH2O, pH 7.39-7.41), colony cut-outs (CCO) were made with a scalpel.

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