Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
2011 ◽
Vol 679-680
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pp. 445-448
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Keyword(s):
Post-oxidation annealing (POA) in Ar at high temperature has been performed during fabrication of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). The gate oxides were formed by thermal oxidation followed by N2O annealing, then annealed in Ar for 30 min or 5 h at 1300 °C. The results of Secondary Ion Mass Spectrometry (SIMS) measurements indicated that the C atoms accumulated at the SiO2/SiC interface by thermal oxidation diffused during the 5h-Ar annealing. The characteristics of n-channel MOSFETs were improved and the peak value of field effect mobility was increased to 33 cm2/Vs from 19 cm2/Vs by extending the Ar annealing time.
2004 ◽
Vol 22
(1)
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pp. 327
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1991 ◽
Vol 9
(3)
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pp. 1390-1394
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2016 ◽
Vol 13
(4)
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pp. 143-154
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2001 ◽
Vol 188
(1)
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pp. 219-222
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2007 ◽
Vol 46
(4B)
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pp. 1921-1928
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1994 ◽
Vol 33
(Part 2, No. 7A)
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pp. L916-L917
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Keyword(s):
2020 ◽
Vol 217
(7)
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pp. 1900802
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1997 ◽
Vol 36
(Part 1, No. 7A)
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pp. 4225-4229