Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations
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2012 ◽
Vol 717-720
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pp. 709-712
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2006 ◽
Vol 527-529
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pp. 1043-1046
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2008 ◽
Vol 600-603
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pp. 679-682
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2009 ◽
Vol 615-617
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pp. 789-792
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2014 ◽
Vol 778-780
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pp. 418-423
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