Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
2014 ◽
Vol 778-780
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pp. 159-162
Keyword(s):
The effect of process parameters such as growth temperature, C/Si ratio, etching time, and Si/H2ratio on dislocation density was investigated by performing KOH etching on 100 μm thick epitaxial layers grown on 4° off axis 4H-SiC substrates at various growth conditions by a chemical vapor deposition (CVD) process using a chloride-based chemistry to achieve growth rates exceeding 100 μm/h. We observe that the growth temperature and the growth rate have no significant influence on the dislocation density in the grown epitaxial layers. A low C/Si ratio increases the density of threading screw dislocations (TSD) markedly. The basal plane dislocation (BPD) density was reduced by using a proper in-situ etch prior to growth.
2010 ◽
Vol 645-648
◽
pp. 99-102
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2013 ◽
Vol 740-742
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pp. 251-254
2010 ◽
Vol 645-648
◽
pp. 251-254
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2009 ◽
Vol 615-617
◽
pp. 105-108
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2007 ◽
Vol 306
(2)
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pp. 297-302
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2011 ◽
Vol 679-680
◽
pp. 59-62
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2009 ◽
Vol 615-617
◽
pp. 61-66
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Keyword(s):