Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications

2014 ◽  
Vol 778-780 ◽  
pp. 95-98 ◽  
Author(s):  
Massimo Camarda ◽  
Stefania Privitera ◽  
Ruggero Anzalone ◽  
Nicolò Piluso ◽  
Patrick Fiorenza ◽  
...  

In this paper we investigate the role of the growth rate (varied by changing the Si/H2ratio and using TCS to avoid Si droplet formation) on the surface roughness (Rq), the density of single Shockley stacking faults (SSSF) and 3C-inclusions (i.e. epi-stacking faults, ESF). We find that optimized processes with higher growth rates allow to improve the films inallthe considered aspects. This result, together with the reduced cost of growth processes, indicates that high growth rates should always be used to improve the overall quality of 4H-SiC homoepitaxial growths. Furthermore we analyze the connection between surface morphology and density of traps (Dit) at the SiO2/SiC interface in fabricated MOS devices finding consistent indications that higher surface roughness (step-bunched surfaces) can improve the quality of the interface by reducing theDitvalue.

2013 ◽  
Vol 740-742 ◽  
pp. 229-234 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Canino ◽  
Patrick Fiorenza ◽  
Andrea Severino ◽  
Ruggero Anzalone ◽  
...  

we study the surface morphology of homoepitaxially grown 4H silicon carbide in terms of growth rate, miscut direction of the substrate and post growth argon thermal annealings. All the results indicate that the final surface morphology is the result of a competition between energetic reorganization and kinetic randomness. Because in all observed conditions energetic reorganization favors surface ondulations (“step bunching”), out-of-equilibrium conditions are one of the keys to favor the reduction of the surface roughness to values below ~0.5 nm. We theoretically support these results using kinetics superlattice Monte Carlo simulations (KslMC)


2012 ◽  
Vol 717-720 ◽  
pp. 149-152 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Canino ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Andrea Severino ◽  
...  

In this paper we study the surface morphology of <11-20> 4° degree off, silicon terminated, 4H Silicon Carbide (4H-SiC) in terms of growth parameters and post growth argon thermal annealing. We find that out-of-equilibrium conditions favor the reduction of the surface roughness. Furthermore, we find preliminary indications that the same growth parameters that lead to the reduction of the surface roughness promote also a reduction of (1,3) and (4,4) stacking faults density.


2015 ◽  
Vol 821-823 ◽  
pp. 141-144 ◽  
Author(s):  
Robin Karhu ◽  
Ian Booker ◽  
Jawad ul Hassan ◽  
Ivan Ivanov ◽  
Erik Janzén

The influence of chlorine has been investigated for high growth rates of 4H-SiC epilayers on 4o off-cut substrates. Samples were grown at a growth rate of approximately 50 and 100 μm/h and various Cl/Si ratios. The growth rate, net doping concentration and charge carrier lifetime have been studied as a function of Cl/Si ratio. This study shows some indications that a high Cl concentration in the growth cell leads to less availability of Si during the growth process.


2006 ◽  
Vol 527-529 ◽  
pp. 179-182 ◽  
Author(s):  
Stefano Leone ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Abbondanza ◽  
F. Portuese ◽  
...  

4H-SiC epitaxial layers have been grown using trichlorosilane (TCS) as the silicon precursor source together with ethylene as the carbon precursor source. A higher C/Si ratio is necessary compared with the silane/ethylene system. This ratio has to be reduced especially at higher Si/H2 ratio because the step-bunching effect occurs. From the comparison with the process that uses silane as the silicon precursor, a 15% higher growth rate has been found using TCS (trichlorosilane) at the same Si/H2 ratio. Furthermore, in the TCS process, the presence of chlorine, that reduces the possibility of silicon droplet formation, allows to use a high Si/H2 ratio and then to reach high growth rates (16 *m/h). The obtained results on the growth rates, the surface roughness and the crystal quality are very promising.


2011 ◽  
Vol 679-680 ◽  
pp. 115-118 ◽  
Author(s):  
Jawad ul Hassan ◽  
Peder Bergman ◽  
Anne Henry ◽  
Erik Janzén

The effect of different C/Si ratio on the surface morphology has been studied to optimize the on-axis homoepitaxial growth conditions on 4H-SiC substrates to improve the surface roughness of epilayers. The overall surface roughness is found to decrease with decreasing C/Si ratio. An order of magnitude lower surface roughness has been observed using C/Si ratio = 0.8 without disturbing the polytype stability in the epilayer. A high growth rate of 10 µm/h was achieved without introducing 3C inclusions. The epilayers grown at higher growth rate with C/Si ratio = 1 also had improvements in the surface roughness. 100% 4H polytype was maintained in the epilayers grown with C/Si ratio in the range of 1.2 to 0.8 and with high growth rate of 10 µm/h.


1991 ◽  
Vol 237 ◽  
Author(s):  
W. J. Meng ◽  
J. Heremans

ABSTRACTWe report on growth of crystalline superlattices of aluminum nitride/zirconium nitride on aluminum nitride buffered Si(111) substrates. We observed increased buffer layer surface roughness as compared with the buffer/Substrate interface. This roughness in turn influences the quality of the superlattice. We report results of surface morphology examination as a function of growth rate and substrate temperature.


2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.


2018 ◽  
Vol 115 (31) ◽  
pp. E7361-E7368 ◽  
Author(s):  
Bernardo García-Carreras ◽  
Sofía Sal ◽  
Daniel Padfield ◽  
Dimitrios-Georgios Kontopoulos ◽  
Elvire Bestion ◽  
...  

Relating the temperature dependence of photosynthetic biomass production to underlying metabolic rates in autotrophs is crucial for predicting the effects of climatic temperature fluctuations on the carbon balance of ecosystems. We present a mathematical model that links thermal performance curves (TPCs) of photosynthesis, respiration, and carbon allocation efficiency to the exponential growth rate of a population of photosynthetic autotroph cells. Using experiments with the green alga, Chlorella vulgaris, we apply the model to show that the temperature dependence of carbon allocation efficiency is key to understanding responses of growth rates to warming at both ecological and longer-term evolutionary timescales. Finally, we assemble a dataset of multiple terrestrial and aquatic autotroph species to show that the effects of temperature-dependent carbon allocation efficiency on potential growth rate TPCs are expected to be consistent across taxa. In particular, both the thermal sensitivity and the optimal temperature of growth rates are expected to change significantly due to temperature dependence of carbon allocation efficiency alone. Our study provides a foundation for understanding how the temperature dependence of carbon allocation determines how population growth rates respond to temperature.


1981 ◽  
Vol 7 (3) ◽  
pp. 145-158
Author(s):  
R.T. Maddock

The formulation and execution of economic policy towards the Soviet block has generally been based on the presumption by Western governments of the inevitable and demonstrable economic superiority of capitalist over communist systems. Expectations derived from theoretical analysis of the misallocation of economic resources that would obtain in an economy lacking a rational price system appear to be sustained by empirical investigation of the Soviet Union. The impossibility of ensuring consistent and optimal plans, the failure to meet demand in terms of both quantity and quality of consumer goods and the requirement of excessive inputs of factors and resources per unit of output in both industry and agriculture compared with the mixed economies have been well documented, and appear to be endemic in Eastern Europe. Although it is more difficult to make international comparisons of dynamic efficiency due to the lack of an appropriate conceptual framework, both theoretical and empirical analyses appear to sustain the conventional orthodoxy. Material balances planning, and in particular the system of factor rewards prevailing in the U.S.S.R., give rise to expectations of bias against technical progress. The most comprehensive investigation into the sources of technological progress in the Soviet Union shows that in the period 1945–65, only 11 per cent of the technologies then in use had been internally generated, the rest being imported from capitalist sources. It has been estimated that, the technology gap between the U.S.A. and the U.S.S.R. may be between 10 and 25 years. The impressively high growth rates achieved by the Soviet Union in the 1950s and early 1960s, it is further claimed, are not evidence of the eventual dynamic superiority of the planned system, as Soviet economists insist, but are no more than a reflection of the low level of economic development which the Soviet economy had attained by the beginning of the period of the Five Year Plans. Once abundant and under-utilized factors of production were fully absorbed into the economy, the requirement of the extensive growth model for large inputs of labour and capital per unit of output would cause a deceleration of growth rates. Statistics for the 1970s appear to bear out the prediction.


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