Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films

2012 ◽  
Vol 717-720 ◽  
pp. 149-152 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Canino ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Thermal Annealing ◽  
Growth Parameters ◽  
Stacking Faults ◽  
Growth Processes ◽  
Equilibrium Conditions ◽  
The Impact

In this paper we study the surface morphology of <11-20> 4° degree off, silicon terminated, 4H Silicon Carbide (4H-SiC) in terms of growth parameters and post growth argon thermal annealing. We find that out-of-equilibrium conditions favor the reduction of the surface roughness. Furthermore, we find preliminary indications that the same growth parameters that lead to the reduction of the surface roughness promote also a reduction of (1,3) and (4,4) stacking faults density.

Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films

2013 ◽  
Vol 740-742 ◽  
pp. 229-234 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Canino ◽  
Patrick Fiorenza ◽  
Andrea Severino ◽  
Ruggero Anzalone ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Silicon Carbide ◽  
Monte Carlo ◽  
Surface Morphology ◽  
Monte Carlo Simulations ◽  
Equilibrium Conditions ◽  
Step Bunching ◽  
Final Surface

we study the surface morphology of homoepitaxially grown 4H silicon carbide in terms of growth rate, miscut direction of the substrate and post growth argon thermal annealings. All the results indicate that the final surface morphology is the result of a competition between energetic reorganization and kinetic randomness. Because in all observed conditions energetic reorganization favors surface ondulations (“step bunching”), out-of-equilibrium conditions are one of the keys to favor the reduction of the surface roughness to values below ~0.5 nm. We theoretically support these results using kinetics superlattice Monte Carlo simulations (KslMC)

Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications

2014 ◽  
Vol 778-780 ◽  
pp. 95-98 ◽  
Author(s):  
Massimo Camarda ◽  
Stefania Privitera ◽  
Ruggero Anzalone ◽  
Nicolò Piluso ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Growth Rates ◽  
Stacking Faults ◽  
High Growth ◽  
Mos Devices

In this paper we investigate the role of the growth rate (varied by changing the Si/H2ratio and using TCS to avoid Si droplet formation) on the surface roughness (Rq), the density of single Shockley stacking faults (SSSF) and 3C-inclusions (i.e. epi-stacking faults, ESF). We find that optimized processes with higher growth rates allow to improve the films inallthe considered aspects. This result, together with the reduced cost of growth processes, indicates that high growth rates should always be used to improve the overall quality of 4H-SiC homoepitaxial growths. Furthermore we analyze the connection between surface morphology and density of traps (Dit) at the SiO2/SiC interface in fabricated MOS devices finding consistent indications that higher surface roughness (step-bunched surfaces) can improve the quality of the interface by reducing theDitvalue.

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

2020 ◽  
Vol 1004 ◽  
pp. 464-471
Author(s):  
Sarah Rugen ◽  
Siddarth Sundaresan ◽  
Ranbir Singh ◽  
Nando Kaminski
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Current Density ◽  
High Power ◽  
Stacking Faults ◽  
Bipolar Junction Transistors ◽  
Mode Operation ◽  
Different Temperatures ◽  
Current Densities ◽  
The Impact

Bipolar silicon carbide devices are attractive for high power applications offering high voltage devices with low on-state voltages due to plasma flooding. Unfortunately, these devices suffer from bipolar degradation, which causes a significant degradation of the on-state voltage. To explore the generation of stacking faults, which cause the degradation, the impact of the current density and temperature on bipolar degradation is investigated in this work. The analysis is done by stressing the base-collector diode of 1.2 kV bipolar junction transistors (BJTs) as well as the BJTs in common-emitter mode operation with different current densities at different temperatures.

scholarly journals 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3407 ◽  
Author(s):  
Massimo Zimbone ◽  
Marcin Zielinski ◽  
Corrado Bongiorno ◽  
Cristiano Calabretta ◽  
Ruggero Anzalone ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Growth Parameters ◽  
Stacking Faults ◽  
Phase Boundaries ◽  
Compliant Substrate ◽  
Patterned Substrate ◽  
Inverted Pyramid ◽  
Careful Control ◽  
Cubic Silicon Carbide

This work reports on the properties of cubic silicon carbide (3C-SiC) grown epitaxially on a patterned silicon substrate composed of squared inverted silicon pyramids (ISP). This compliant substrate prevents stacking faults, usually found at the SiC/Si interface, from reaching the surface. We investigated the effect of the size of the inverted pyramid on the epilayer quality. We noted that anti-phase boundaries (APBs) develop between adjacent faces of the pyramid and that the SiC/Si interfaces have the same polarity on both pyramid faces. The structure of the heterointerface was investigated. Moreover, due to the emergence of APB at the vertex of the pyramid, voids buried on the epilayer form. We demonstrated that careful control of the growth parameters allows modification of the height of the void and the density of APBs, improving SiC epitaxy quality.

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation

2015 ◽  
Vol 821-823 ◽  
pp. 115-120
Author(s):  
Véronique Soulière ◽  
Kassem Alassaad ◽  
François Cauwet ◽  
Hervé Peyre ◽  
Thomas Kups ◽  
...  
Keyword(s):  
Experimental Study ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Parameters ◽  
Chemical System ◽  
Impurity Incorporation ◽  
Homoepitaxial Growth

In this paper, we will describe a detailed experimental study on the behavior of Ge incorporation into 4H-SiC during its homoepitaxial growth by CVD. Addition of GeH4 precursor to the standard chemical system SiH4 + C3H8 was investigated as a function of various growth parameters. Its effect on surface morphology, layer quality and purity was followed. All these results will allow proposing an exhaustive picture of Ge incorporation mechanism into 4H-SiC with the possible benefits of such impurity incorporation in the silicon carbide lattice.

Impact of Surface Morphology on the Electrical Properties of Al/Ti Ohmic Contacts on Al-Implanted 4H-SiC

2011 ◽  
Vol 679-680 ◽  
pp. 413-416
Author(s):  
Alessia Frazzetto ◽  
Fabrizio Roccaforte ◽  
Filippo Giannazzo ◽  
Raffaella Lo Nigro ◽  
Corrado Bongiorno ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Ohmic Contacts ◽  
Metal Layer ◽  
Morphological Data ◽  
Specific Contact Resistance ◽  
Interfacial Region ◽  
Specific Contact ◽  
The Impact

This paper reports on the impact of the surface morphology on the properties of Ti/Al Ohmic contacts fabricated on Al-implanted 4H-SiC. In particular, the surface roughness of the Al-implanted regions after annealing at 1700 °C was strongly reduced by the using a protective carbon capping layer during annealing (the surface roughness decreased from 9.0 nm to 1.3 nm). In this way, also the morphology and the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions could be improved. The electrical and morphological data were correlated with the structural properties of the reacted metal layer and of the metal/SiC interfacial region.

GaAs Heteroepitaxy on Fluoride by Electron Beam Induced Surface Modification

2001 ◽  
Vol 696 ◽  
Author(s):  
Tobias Fritz ◽  
Markus Haiml ◽  
Silke Schön ◽  
Ursula Keller
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Saturable Absorber ◽  
Optical Switching ◽  
Scattered Light ◽  
Laser Pulses ◽  
Optoelectronic Device ◽  
Ultrashort Laser Pulses ◽  
Force Microscopy ◽  
The Impact

AbstractGaAs saturable absorber materials are used in ultrafast nonlinear optics to obtain all-optical switching in optoelectronic devices. They are introduced to semiconductor saturable absorber mirrors (SESAMs) for the generation of ultrashort laser pulses. GaAs is grown on CaF2 by molecular beam epitaxy to fabricate devices, which provide a large high reflection bandwidth. The CaF2 surface was exposed to high- and low-energy electron irradiation before and during growth to increase the surface free energy for the subsequent GaAs overgrowth. A three-layer GaAs/ fluoride device was designed and fabricated to study the impact of the electron exposure on the growth mode and the surface roughness. The surface morphology of an optoelectronic device can cause nonsaturable losses, which degrade the device performance. Therefore, the effect of the electron exposure of the CaF2 layer on the surface roughness of the device was studied by atomic force microscopy. Measurements of the scattered light from the device surface allowed for a quantitative analysis of the nonsaturable losses attributed to the surface morphology of the device.

Impact of Pseudomonas putida on the Growth Parameters of Fenugreek (Trigonella foenum- graecum L.): A Traditional Herbal Boon for Rural Areas

2017 ◽  
Vol 5 (2) ◽  
pp. 93-96
Author(s):  
Shashi Kant Shukla ◽  
◽  
Awadhesh Kumar ◽  
Anupam Dikshit ◽  
◽  
...  
Keyword(s):  
Pseudomonas Putida ◽  
Rural Areas ◽  
Growth Parameters ◽  
Leguminous Plant ◽  
Food Protein ◽  
Botany Department ◽  
Medicinal Value ◽  
Randomized Design ◽  
Trigonella Foenum Graecum L ◽  
The Impact

The present study aims the impact of Pseudomonas putida on different growth parameters of Trigonella sp., a leguminous plant to support the requirement of food, protein along with their medicinal value in the rural areas of India. A pot experiment was arranged based on completely randomized design with four replications at Biological Product Laboratory, Botany Department, University of Allahabad. Treatments were given at the seed level with one of control. Results indicated that application of P. putida significantly improved vegetative growth and showed an edge on the growth of the fenugreek as compared to the control.

scholarly journals Smoothing additive manufactured parts using ns-pulsed laser radiation

2021 ◽  
Author(s):  
Florian Kuisat ◽  
Fernando Lasagni ◽  
Andrés Fabián Lasagni
Keyword(s):  
Surface Roughness ◽  
Mechanical Performance ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Industrial Applications ◽  
Laser Source ◽  
Pulsed Laser Radiation ◽  
Current State ◽  
The Impact

AbstractIt is well known that the surface topography of a part can affect its mechanical performance, which is typical in additive manufacturing. In this context, we report about the surface modification of additive manufactured components made of Titanium 64 (Ti64) and Scalmalloy®, using a pulsed laser, with the aim of reducing their surface roughness. In our experiments, a nanosecond-pulsed infrared laser source with variable pulse durations between 8 and 200 ns was applied. The impact of varying a large number of parameters on the surface quality of the smoothed areas was investigated. The results demonstrated a reduction of surface roughness Sa by more than 80% for Titanium 64 and by 65% for Scalmalloy® samples. This allows to extend the applicability of additive manufactured components beyond the current state of the art and break new ground for the application in various industrial applications such as in aerospace.

scholarly journals Aquatic Toxicity of Photocatalyst Nanoparticles to Green Microalgae Chlorella vulgaris

Water ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 77
Author(s):  
Cristina Adochite ◽  
Luminita Andronic
Keyword(s):  
Chlorella Vulgaris ◽  
Advanced Oxidation Process ◽  
Growth Parameters ◽  
Aquatic Toxicity ◽  
Basal Medium ◽  
Inhibitory Effect ◽  
Synthesis Methods ◽  
Potent Inhibitory Effect ◽  
Density Surface ◽  
The Impact

In the last years, nanoparticles such as TiO2, ZnO, NiO, CuO and Fe2O3 were mainly used in wastewater applications. In addition to the positive aspects concerning using nanoparticles in the advanced oxidation process of wastewater containing pollutants, the impact of these nanoparticles on the environment must also be investigated. The toxicity of nanoparticles is generally investigated by the nanomaterials’ effect on green algae, especially on Chlorella vulgaris. In this review, several aspects are reviewed: the Chlorella vulgaris culture monitoring and growth parameters, the effect of different nanoparticles on Chlorella vulgaris, the toxicity of photocatalyst nanoparticles, and the mechanism of photocatalyst during oxidative stress on the photosynthetic mechanism of Chlorella vulgaris. The Bold basal medium (BBM) is generally recognized as an excellent standard cultivation medium for Chlorella vulgaris in the known environmental conditions such as temperature in the range 20–30 °C and light intensity of around 150 μE·m2·s−1 under a 16/8 h light/dark cycle. The nanoparticles synthesis methods influence the particle size, morphology, density, surface area to generate growth inhibition and further algal deaths at the nanoparticle-dependent concentration. Moreover, the results revealed that nanoparticles caused a more potent inhibitory effect on microalgal growth and severely disrupted algal cells’ membranes.

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