Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films

2013 ◽  
Vol 740-742 ◽  
pp. 229-234 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Canino ◽  
Patrick Fiorenza ◽  
Andrea Severino ◽  
Ruggero Anzalone ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Silicon Carbide ◽  
Monte Carlo ◽  
Surface Morphology ◽  
Monte Carlo Simulations ◽  
Equilibrium Conditions ◽  
Step Bunching ◽  
Final Surface

we study the surface morphology of homoepitaxially grown 4H silicon carbide in terms of growth rate, miscut direction of the substrate and post growth argon thermal annealings. All the results indicate that the final surface morphology is the result of a competition between energetic reorganization and kinetic randomness. Because in all observed conditions energetic reorganization favors surface ondulations (“step bunching”), out-of-equilibrium conditions are one of the keys to favor the reduction of the surface roughness to values below ~0.5 nm. We theoretically support these results using kinetics superlattice Monte Carlo simulations (KslMC)

Investigation of silicon carbide physical vapor transport growth on the C-terminated face of 6H seeds

2000 ◽  
Vol 640 ◽  
Author(s):  
D. Schulz ◽  
J. Doerschel ◽  
K. Irmscher ◽  
H.-J. Rost ◽  
D. Siche ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Growth Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Step Bunching ◽  
Sublimation Growth

ABSTRACTSublimation growth of 6H-SiC has been studied with respect to surface morphology, growth temperature, supersaturation and growth rate. Growth was performed on the C-terminated face of 6H seeds mainly and for comparison also the Si-terminated face was used. Step bunching is observed dependent on different parameters and is strongly influenced by the seed orientation. The growth rate of 4H on the C-face is found to be higher than the rate of 6H grown on the Siface.

Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films

2012 ◽  
Vol 717-720 ◽  
pp. 149-152 ◽  
Author(s):  
Massimo Camarda ◽  
Andrea Canino ◽  
Patrick Fiorenza ◽  
Corrado Bongiorno ◽  
Andrea Severino ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Thermal Annealing ◽  
Growth Parameters ◽  
Stacking Faults ◽  
Growth Processes ◽  
Equilibrium Conditions ◽  
The Impact

In this paper we study the surface morphology of <11-20> 4° degree off, silicon terminated, 4H Silicon Carbide (4H-SiC) in terms of growth parameters and post growth argon thermal annealing. We find that out-of-equilibrium conditions favor the reduction of the surface roughness. Furthermore, we find preliminary indications that the same growth parameters that lead to the reduction of the surface roughness promote also a reduction of (1,3) and (4,4) stacking faults density.

Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications

2014 ◽  
Vol 778-780 ◽  
pp. 95-98 ◽  
Author(s):  
Massimo Camarda ◽  
Stefania Privitera ◽  
Ruggero Anzalone ◽  
Nicolò Piluso ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Silicon Carbide ◽  
Surface Morphology ◽  
Growth Rates ◽  
Stacking Faults ◽  
High Growth ◽  
Mos Devices

In this paper we investigate the role of the growth rate (varied by changing the Si/H2ratio and using TCS to avoid Si droplet formation) on the surface roughness (Rq), the density of single Shockley stacking faults (SSSF) and 3C-inclusions (i.e. epi-stacking faults, ESF). We find that optimized processes with higher growth rates allow to improve the films inallthe considered aspects. This result, together with the reduced cost of growth processes, indicates that high growth rates should always be used to improve the overall quality of 4H-SiC homoepitaxial growths. Furthermore we analyze the connection between surface morphology and density of traps (Dit) at the SiO2/SiC interface in fabricated MOS devices finding consistent indications that higher surface roughness (step-bunched surfaces) can improve the quality of the interface by reducing theDitvalue.

scholarly journals Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states

2021 ◽  
Author(s):  
Janusz Wozny ◽  
Andrii Kovalchuk ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Piotr Bugalski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Electron Transport ◽  
Monte Carlo Simulations ◽  
Electric Fields ◽  
Density Of States ◽  
Electron Mobility ◽  
Crucial Issue ◽  
Calculated Density ◽  
Correct Calculation

AbstractWe carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.

Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 468-471 ◽  
Author(s):  
Yuki Mori ◽  
Mieko Matsumura ◽  
Hirotaka Hamamura ◽  
Toshiyuki Mine ◽  
Akio Shima ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Dielectric Breakdown ◽  
Optical Emission ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tem Analysis ◽  
Mos Capacitor ◽  
Step Bunching ◽  
Electrical Stress

The mechanism of dielectric breakdown of oxide on step-bunching of 4H-silicon carbide (SiC) was investigated. Comparing the surface morphology obtained before forming metal-oxide-semiconductor (MOS) capacitor and optical emission on the capacitor under electrical stress, it was cleared that current concentrates on step-bunching and it often caused preferential dielectric breakdown. Based on TEM analysis and the observation of time dependence of emission under the stress, a new model was proposed to explain the dielectric breakdown on step-bunching.

The Risk and Reward of Investing a Lost Earnings Award: A Comparison of Stocks, Bonds, and Bills

2012 ◽  
Vol 23 (2) ◽  
pp. 199-207 ◽  
Author(s):  
Michael L. Nieswiadomy
Keyword(s):  
Growth Rate ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Corporate Bonds ◽  
Present Value ◽  
Rates Of Return ◽  
Treasury Bills ◽  
Government Bonds

Abstract This note analyzes the risk and reward of investing the present value of a 40-year worklife of lost earnings (of $10,000 per year), discounted using rates of returns on various portfolios. Eight portfolios are examined: 100% in Treasury bills; 100% in intermediate-term government bonds; 100% in corporate bonds; four mixtures of the S&P 500, intermediate-term government bonds, and Treasury bills; and 100% in the S&P 500. The rates of return on the portfolios and the growth rate in hourly earnings are randomly selected from a year in the 1965–2010 period. The results of 10,000 Monte Carlo simulations indicate that a 40-year portfolio will face “ruin” roughly 51% to 52% of the time for all portfolios. However, the portfolios differ greatly in the median year of ruin (if ruin occurs), ranging from a high of the 38th year for a 100% Treasury bills portfolio, to the 22nd year for a 100% S&P 500 portfolio. The percent of time that the award greatly enriches (with an ending balance over $1,000,000) the plaintiff varies greatly as well. A 100% S&P 500 portfolio enriches the plaintiff 36.8% of the time; a portfolio of 30% S&P 500, 30% intermediate government bonds, and 40% Treasury bills enriches 14.5% of the time; while a 100% Treasury bills portfolio will virtually never enrich.

scholarly journals Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

AIP Advances ◽  
2014 ◽  
Vol 4 (9) ◽  
pp. 097106 ◽  
Author(s):  
Hui-Jun Guo ◽  
Wei Huang ◽  
Xi Liu ◽  
Pan Gao ◽  
Shi-Yi Zhuo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Single Crystal ◽  
Lattice Model

On the prediction of crystal morphology. III. Equilibrium and growth behaviour of crystal faces containing multiple connected nets

1999 ◽  
Vol 55 (1) ◽  
pp. 84-94 ◽  
Author(s):  
R. F. P. Grimbergen ◽  
P. Bennema ◽  
H. Meekes
Keyword(s):  
Growth Rate ◽  
Monte Carlo ◽  
Growth Rates ◽  
Crystal Morphology ◽  
Crystal Habit ◽  
Growth Behaviour ◽  
Equilibrium Conditions ◽  
Relative Growth ◽  
Relative Growth Rates ◽  
Surface Phases

In this paper, the equilibrium and growth behaviour of faces (hkl) with more than one connected net is studied. It is shown that for these types of orientation different surface phases exist under equilibrium conditions as a function of temperature. Depending on the exact bonding topology at the surface, flat, rough or disordered flat phases are found. Moreover, the growth rate R_{hkl} of such faces can differ significantly from the usually calculated relative growth rates based on the attachment energy. Monte Carlo simulations confirm the results from the Hartman–Perdok analyses and offer a tool for the prediction of the crystal habit as a function of supersaturation.

scholarly journals Evolution of Surface Roughness During CVD Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
E. Chason ◽  
T.M. Mayer ◽  
D.P. Adams ◽  
H. Huang ◽  
T. Diaz De La Rubia ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Monte Carlo ◽  
Chemical Vapor Deposition ◽  
Monte Carlo Simulations ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Molecular Precursors ◽  
Cvd Growth ◽  
Physical And Chemical ◽  
Kinetics Of

AbstractMonte Carlo simulations of physical and chemical vapor deposition are used to study roughening kinetics of films that grow by nucleation and coalescence of clusters. The effects of interlayer transport, preferential dissociation of molecular precursors and energetic differences between the clusters and the substrate are examined.

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