scholarly journals Lattice Strain Effect in Structural, Magnetoresistance and Electrical Properties of La0.67Sr0.33MnO3 Bulk and Thin Film System

2016 ◽  
Vol 846 ◽  
pp. 635-640
Author(s):  
Kean Pah Lim ◽  
Han Ming Albert Gan ◽  
Soo Kien Chen ◽  
Zainal Abdib Talib ◽  
S.A. Halim ◽  
...  
Keyword(s):  
Thin Films ◽  
Lattice Strain ◽  
Hexagonal Structure ◽  
Fused Silica ◽  
Strain Effect ◽  
Conventional Solid State Reaction ◽  
Corning Glass ◽  
Lower Temperature ◽  
Pellet Form ◽  
Induced Structure

Polycrystalline La0.67Sr0.33MnO3 (LSMO) powder prepared via conventional solid state reaction was pressed into pellet form. The pellets became target to growth thin films on corning glass (LSMO-C), fused silica (LSMO-FS) and MgO (100) (LSMO-M) substrate via pulsed laser deposition (PLD) method. XRD results showed that all samples were hexagonal structure with R-3C space group. Thin films showed relatively smaller crystallite size compared to bulk samples. From Rietveld Refinement analysis, all thin films experienced lattice strain when deposited on different substrate. LSMO compound deposited in different substrate induced structure distortion and lattice strain. Compression along c-axis occurred when the lattice strain increased thus shifted the metal-insulator transition temperature to lower temperature and increased its resistivity.

Optical properties and electrical characterization of p-type ZnO thin films prepared by thermally oxiding Zn3N2 thin films

2003 ◽  
Vol 18 (1) ◽  
pp. 8-13 ◽  
Author(s):  
B. S. Li ◽  
Y. C. Liu ◽  
Z. Z. Zhi ◽  
D. Z. Shen ◽  
Y. M. Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Deep Level ◽  
Free Exciton ◽  
Hexagonal Structure ◽  
Fused Silica ◽  
Zno Thin Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Simple Method

In this paper, we report a simple method for preparing p-type ZnO thin films by thermal oxidization of Zn3N2 thin films. The Zn3N2 films were grown on fused silica substrates by using plasma-enhanced chemical vapor deposition from a Zn(C2H5)2 and NH3 gas mixture. The Zn3N2 film with a cubic antibixbyite structure transformed to ZnO:N with a hexagonal structure as the annealing temperature reached 500 °C. When the annealing temperature reached 700 °C, a high-quality p-type ZnO film with a carrier density of 4.16 × 1017 cm−3 was obtained, for which the film showed a strong near-band-edge emission at 3.30 eV without deep-level emission, and the full width at half-maximum of the photoluminescence spectrum was 120 meV at room temperature. The origin of the ultraviolet band was the overlap of free exciton and the bound exciton. The N concentration was as high as 1021 cm−3, which could be controlled by adjusting the parameters of the annealing processes.

scholarly journals Structural And Optical Properties Of VOx Thin Films

2015 ◽  
Vol 60 (2) ◽  
pp. 957-961 ◽  
Author(s):  
K. Schneider
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Transmittance ◽  
Fused Silica ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Corning Glass ◽  
Oxygen Gas ◽  
Deposited Films

Abstract VOx thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated. Structural properties of as-sputtered thin films were studied by X-ray diffraction at glancing incidence, GIXD. Optical transmittance and reflectance spectra were recordedwith a Lambda 19 Perkin-Elmer double spectrophotometer. Thickness of the films was determined from the profilometry. It has been confirmed by XRD that the deposited films are composed mainly of V2O5 phase. The estimated optical band gap of 2.5 eV corresponds to V2O5.

Annealing effects on phase transformation and powder microstructure of nanocrystalline zirconia polymorphs

1999 ◽  
Vol 14 (1) ◽  
pp. 90-96 ◽  
Author(s):  
R. Ramamoorthy ◽  
S. Ramasamy ◽  
D. Sundararaman
Keyword(s):  
Monoclinic Phase ◽  
Lattice Strain ◽  
Dopant Concentration ◽  
Precipitation Method ◽  
Strain Effect ◽  
Volume Percentage ◽  
Annealing Temperatures ◽  
Annealing Effects ◽  
Nanocrystalline Zirconia ◽  
Average Size

Nanocrystalline zirconia powders in pure form and doped with yttria and calcia were prepared by the precipitation method. In the as-prepared condition, all the doped samples show only monoclinic phase, independent of the dopants and dopant concentration. On annealing the powders at 400 °C and above, in the case of 3 and 6 mol% Y2O3 stabilized ZrO2 (3YSZ and 6YSZ), the monoclinic phase transforms to tetragonal and cubic phases, respectively, whereas in 3 and 6 mol% CaO stabilized ZrO2 (3CSZ and 6CSZ), the volume percentage of the monoclinic phase gradually decreases up to the annealing temperature of about 1000 °C and then increases for higher annealing temperatures. The presence of monoclinic phase in the as-prepared samples of doped zirconia has been attributed to the lattice strain effect which results in the less symmetric lattice. For the annealing temperatures below 1000 °C, the phenomenon of partial stabilization of the tetragonal phase in 3CSZ and 6CSZ can be explained in terms of the grain size effect. High resolution transmission electron microscopy (HRTEM) observations reveal the lattice strain structure in the as-prepared materials. The particles are found to be a tightly bound aggregate of small crystallites with average size of 10 nm. The morphology of the particles is observed to be dependent on the dopants and dopant concentration.

scholarly journals Chemical Solution Deposition of La-Substituted BiFe0.5Sc0.5O3 Perovskite Thin Films on Different Substrates

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 307
Author(s):  
Diana Griesiute ◽  
Dovydas Karoblis ◽  
Lina Mikoliunaite ◽  
Aleksej Zarkov ◽  
Andrei N. Salak ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Cost Effective ◽  
Deposition Process ◽  
Stability Study ◽  
Fused Silica ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Optimal Annealing Temperature ◽  
Xrd Patterns

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

scholarly journals Influence of Substrate Materials on Nucleation and Properties of Iridium Thin Films Grown by ALD

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 173
Author(s):  
Paul Schmitt ◽  
Vivek Beladiya ◽  
Nadja Felde ◽  
Pallabi Paul ◽  
Felix Otto ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Bulk Material ◽  
Atomic Layer ◽  
Substrate Material ◽  
Fused Silica ◽  
Silicon Wafers ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Influence Of Substrate

Ultra-thin metallic films are widely applied in optics and microelectronics. However, their properties differ significantly from the bulk material and depend on the substrate material. The nucleation, film growth, and layer properties of atomic layer deposited (ALD) iridium thin films are evaluated on silicon wafers, BK7, fused silica, SiO2, TiO2, Ta2O5, Al2O3, HfO2, Ru, Cr, Mo, and graphite to understand the influence of various substrate materials. This comprehensive study was carried out using scanning electron and atomic force microscopy, X-ray reflectivity and diffraction, four-point probe resistivity and contact angle measurements, tape tests, and Auger electron spectroscopy. Within few ALD cycles, iridium islands occur on all substrates. Nevertheless, their size, shape, and distribution depend on the substrate. Ultra-thin (almost) closed Ir layers grow on a Ta2O5 seed layer after 100 cycles corresponding to about 5 nm film thickness. In contrast, the growth on Al2O3 and HfO2 is strongly inhibited. The iridium growth on silicon wafers is overall linear. On BK7, fused silica, SiO2, TiO2, Ta2O5, Ru, Cr, and graphite, three different growth regimes are distinguishable. The surface free energy of the substrates correlates with their iridium nucleation delay. Our work, therefore, demonstrates that substrates can significantly tailor the properties of ultra-thin films.

Pseudomorphic strain effect on the charge-orbital ordering pattern in Pr0.5Sr0.5MnO3 epitaxial thin films

2005 ◽  
Vol 86 (11) ◽  
pp. 112513 ◽  
Author(s):  
Yasushi Ogimoto ◽  
Naoko Takubo ◽  
Masao Nakamura ◽  
Hiroharu Tamaru ◽  
Makoto Izumi ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Effect ◽  
Epitaxial Thin Films ◽  
Orbital Ordering

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

The Synthesis and Characterization of Novel Cadmium Sulphide Nanocrystallites and their Thin Films

2014 ◽  
Vol 875-877 ◽  
pp. 228-231
Author(s):  
Shafique Ahmed Arain ◽  
Christopher Wilkins ◽  
Hafiz Badaruddin
Keyword(s):  
Thin Films ◽  
Vapour Deposition ◽  
Hexagonal Phase ◽  
Chemical Vapour ◽  
Cadmium Sulphide ◽  
Spherical Shape ◽  
Sem Analysis ◽  
Diethyl Dithiocarbamate ◽  
Lower Temperature

Diethyl dithiocarbamate [Cd (S2CN Et2)2] complex is used to deposit the cadmium sulphide thin film at much lower temperature by Aerosol Assisted Chemical Vapour deposition (AACVD) and same precursor is used to synthesize the nanocrystals in Oleylamine at elevated temperature. Thermogravimetric analysis shows that precursor [Cd (S2CN Et2)2] decomposes in the single stage, losing 62% of total weight. Deposition of thin films at 300°C and 400°C showed the growth of CdS clusters which were made of granular crystallites. These results are confirmed by SEM analysis. Thermolysis of the precursor in oleylamine at 240°C gave the nanoparticles most of them are monodispersed spherical shape, few having mono and dipod structures. TEM images confirm the structures. XRD results show the thin films and nanoparticles have hexagonal phase of CdS.

Lattice-strain-driven ferromagnetic ordering in La0.8Sr0.2MnO3 thin films

2004 ◽  
Vol 84 (5) ◽  
pp. 777-779 ◽  
Author(s):  
Y. P. Lee ◽  
S. Y. Park ◽  
V. G. Prokhorov ◽  
V. A. Komashko ◽  
V. L. Svetchnikov
Keyword(s):  
Thin Films ◽  
Lattice Strain ◽  
Ferromagnetic Ordering
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