scholarly journals Influence of Substrate Materials on Nucleation and Properties of Iridium Thin Films Grown by ALD

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 173
Author(s):  
Paul Schmitt ◽  
Vivek Beladiya ◽  
Nadja Felde ◽  
Pallabi Paul ◽  
Felix Otto ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Bulk Material ◽  
Atomic Layer ◽  
Substrate Material ◽  
Fused Silica ◽  
Silicon Wafers ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Influence Of Substrate

Ultra-thin metallic films are widely applied in optics and microelectronics. However, their properties differ significantly from the bulk material and depend on the substrate material. The nucleation, film growth, and layer properties of atomic layer deposited (ALD) iridium thin films are evaluated on silicon wafers, BK7, fused silica, SiO2, TiO2, Ta2O5, Al2O3, HfO2, Ru, Cr, Mo, and graphite to understand the influence of various substrate materials. This comprehensive study was carried out using scanning electron and atomic force microscopy, X-ray reflectivity and diffraction, four-point probe resistivity and contact angle measurements, tape tests, and Auger electron spectroscopy. Within few ALD cycles, iridium islands occur on all substrates. Nevertheless, their size, shape, and distribution depend on the substrate. Ultra-thin (almost) closed Ir layers grow on a Ta2O5 seed layer after 100 cycles corresponding to about 5 nm film thickness. In contrast, the growth on Al2O3 and HfO2 is strongly inhibited. The iridium growth on silicon wafers is overall linear. On BK7, fused silica, SiO2, TiO2, Ta2O5, Ru, Cr, and graphite, three different growth regimes are distinguishable. The surface free energy of the substrates correlates with their iridium nucleation delay. Our work, therefore, demonstrates that substrates can significantly tailor the properties of ultra-thin films.

scholarly journals Growth of Atomic Layer Deposited Ruthenium and Its Optical Properties at Short Wavelengths Using Ru(EtCp)2 and Oxygen

Coatings ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 413 ◽  
Author(s):  
Robert Müller ◽  
Lilit Ghazaryan ◽  
Paul Schenk ◽  
Sabrina Wolleb ◽  
Vivek Beladiya ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Deposition Temperature ◽  
Film Growth ◽  
High Surface ◽  
Atomic Layer ◽  
Fused Silica ◽  
High Density ◽  
Adhesion Properties

High-density ruthenium (Ru) thin films were deposited using Ru(EtCp)2 (bis(ethylcyclopentadienyl)ruthenium) and oxygen by thermal atomic layer deposition (ALD) and compared to magnetron sputtered (MS) Ru coatings. The ALD Ru film growth and surface roughness show a significant temperature dependence. At temperatures below 200 °C, no deposition was observed on silicon and fused silica substrates. With increasing deposition temperature, the nucleation of Ru starts and leads eventually to fully closed, polycrystalline coatings. The formation of blisters starts at temperatures above 275 °C because of poor adhesion properties, which results in a high surface roughness. The optimum deposition temperature is 250 °C in our tool and leads to rather smooth film surfaces, with roughness values of approximately 3 nm. The ALD Ru thin films have similar morphology compared with MS coatings, e.g., hexagonal polycrystalline structure and high density. Discrepancies of the optical properties can be explained by the higher roughness of ALD films compared to MS coatings. To use ALD Ru for optical applications at short wavelengths (λ = 2–50 nm), further improvement of their film quality is required.

scholarly journals Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

2016 ◽  
Vol 7 ◽  
pp. 102-110 ◽  
Author(s):  
Nina J Blumenstein ◽  
Caroline G Hofmeister ◽  
Peter Lindemann ◽  
Cheng Huang ◽  
Johannes Baier ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Polymer Brush ◽  
Oriented Attachment ◽  
Zno Films ◽  
Island Growth ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Before And After

In this study we investigated the influence of an organic polystyrene brush on the deposition of ZnO thin films under moderate conditions. On a non-modified SiO x surface, island growth is observed, whereas the polymer brush induces homogeneous film growth. A chemical modification of the polystyrene brushes during the mineralization process occurs, which enables stronger interaction between the then polar template and polar ZnO crystallites in solution. This may lead to oriented attachment of the crystallites so that the observed (002) texture arises. Characterization of the templates and the resulting ZnO films were performed with ζ-potential and contact angle measurements as well as scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). Infrared spectroscopy (IR) measurements were used to investigate the polystyrene brushes before and after modification.

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Influence of substrate material on the microstructure and optical properties of hot wall deposited SnS thin films

2015 ◽  
Vol 585 ◽  
pp. 40-44 ◽  
Author(s):  
S.A. Bashkirov ◽  
V.F. Gremenok ◽  
V.A. Ivanov ◽  
V.V. Shevtsova ◽  
P.P. Gladyshev
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Material ◽  
Influence Of Substrate ◽  
Sns Thin Films

Sol-Gel Derived Two-Dimensional Nanostructures of Calcium Phosphates

2014 ◽  
Vol 91 ◽  
pp. 13-18 ◽  
Author(s):  
A. Prichodko ◽  
V. Jonauske ◽  
M. Cepenko ◽  
A. Beganskiene ◽  
A. Kareiva
Keyword(s):  
Thin Films ◽  
Calcium Phosphates ◽  
Steel Substrate ◽  
Sol Gel ◽  
Calcium Hydroxyapatite ◽  
Xrd Analysis ◽  
Dip Coating ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Main Components

Calcium hydroxyapatite (Ca10(PO4)6(OH)2, CHAp), tricalcium phosphate (Ca3(PO4)2, TCP) and calcium oxide (CaO) are the main components of inorganic part of human bones. Such synthetic nanocomposites could be very important implantable materials and using as substitute material for human hard tissues (bones and teeth). In this study, an aqueous sol-gel chemistry route has been developed to prepare nanostructured CHAp thin films on stainless steel substrate. For the preparation of thin films dip-coating and spin-coating techniques were used. The final samples were obtained by calcination of coatings for different time at 1000 °C. For the characterization of surface properties, the X-ray powder diffraction (XRD) analysis, scanning electron microscopy (SEM), atomic force microscopy (AFM) and the contact angle measurements were recorded.

YBCO film growth on ultrathin Ag layers

1994 ◽  
Vol 9 (11) ◽  
pp. 2761-2763 ◽  
Author(s):  
C. Zhong ◽  
S.T. Ruggiero ◽  
R. Fletcher ◽  
E. Moser
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Film Growth ◽  
Ybco Film ◽  
Critical Currents ◽  
Complete Coverage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputter Deposited ◽  
Marked Tendency

We discuss our results on the growth of YBCO thin films on ultrathin (1-10 nm) Ag underlayers. Substrates were LaAlO3. YBCO was sputter deposited and Ag thermally evaporated. It was observed that Tc remained relatively unaffected by the Ag underlayers, ranging from 86-88 K. Critical currents were found to be consistent with YBCO grown on bulk Ag when the Ag underlayer film reached complete coverage (∼9 nm). Films grown on Ag showed a marked tendency for microcrystalline growth on the basis of atomic-force microscopy (AFM) results.

scholarly journals Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low-Temperature Film Growth

2017 ◽  
Vol 4 (18) ◽  
pp. 1700123 ◽  
Author(s):  
Miika Mattinen ◽  
Timo Hatanpää ◽  
Tiina Sarnet ◽  
Kenichiro Mizohata ◽  
Kristoffer Meinander ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Deposition

PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure

2015 ◽  
Vol 821-823 ◽  
pp. 213-216
Author(s):  
S.M. Ryndya ◽  
N.I. Kargin ◽  
A.S. Gusev ◽  
E.P. Pavlova
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Selected Area Electron Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Influence Of Substrate ◽  
Composition Structure

Silicon carbide thin films were obtained on Si (100) and (111) substrates by means of vacuum laser ablation of α-SiC ceramic target. The influence of substrate temperature on composition, structure and surface morphology of experimental samples was examined using Rutherford backscattering spectrometry (RBS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM), atomic force microscopy (AFM), selected area electron diffraction (SAED) and X-ray diffraction (XRD) methods.

scholarly journals PEALD grown high-k ZrO-=SUB=-2-=/SUB=- thin films on SiC group IV compound semiconductor

2017 ◽  
Vol 51 (1) ◽  
pp. 133
Author(s):  
Anil G. Khairnar ◽  
Vilas S. Patil ◽  
K.S. Agrawal ◽  
Prerna A. Pandit ◽  
Rahul S. Salunke ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
High Mobility ◽  
Atomic Layer ◽  
Compound Semiconductor ◽  
Group Iv ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
High K

The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposited annealed in rapid thermal annealing chamber at temperature of 400oC. The atomic force microscopy and x-ray photoelectron spectroscopy has been carried out to study the surface topography and roughness and chemical composition of thin film respectively. DOI: 10.21883/FTP.2017.01.8125

scholarly journals Influence of substrate material on spectral properties and thermal quenching of photoluminescence of silicon vacancy colour centres in diamond thin films

2017 ◽  
Vol 68 (7) ◽  
pp. 3-9
Author(s):  
Kateřina Dragounová ◽  
Tibor Ižák ◽  
Alexander Kromka ◽  
Zdeněk Potůček ◽  
Zdeněk Bryknar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Quenching ◽  
Substrate Material ◽  
Photoluminescence Intensity ◽  
Zero Phonon Line ◽  
Colour Centres ◽  
Silicon Vacancy ◽  
Diamond Peak ◽  
Diamond Thin Films ◽  
Influence Of Substrate

AbstractNanocrystalline diamond films with bright photoluminescence of silicon-vacancy colour centres have been grown using a microwave plasma enhanced CVD technique. The influence of substrate material (quartz, Al2O3, Mo and Si) on a reproducible fabrication of diamond thin films with Si-V optical centres is presented. Film quality and morphology are characterized by Raman spectroscopy and SEM technique. SEM shows well faceted diamond grains with sizes from 170 to 300 nm. The diamond peak is confirmed in Raman spectra for all samples. In the case of the quartz substrate, a redshift of the diamond peak is observed (≈3.5 cm−1) due to tension in the diamond film. The steady-state photoluminescence intensity was measured in the temperature range from 11 K to 300 K. All spectra consist of a broad emission band with a maximum near 600 nm and of a sharp zero phonon line in the vicinity of 738 nm corresponding to Si-V centres that is accompanied with a phonon sideband peaking at 757 nm. Activation energies for the thermal quenching of Si-V centre photoluminescence were determined and the effect of the substrate on photoluminescence properties is discussed too.

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