Preparation and Photocatalytic Properties of Terrace Composite SnO2/TiO2:Cu2+ Film

2016 ◽  
Vol 852 ◽  
pp. 1112-1117 ◽  
Author(s):  
Guo Dong Wang ◽  
Chang Ping Wei ◽  
Rui Ying He ◽  
Jing San ◽  
Chun Jia Peng

nanoSnO2 and Cu-doped TiO2 gelatins were prepared by sol-gel method, coated onto glass substrates by spin coating method, followed by drying at low temperature and calcined at high temperature, the influence on the structure and properties made by doping amount and composite form was discussed about. The films were characterized by XRD, SEM , EDS and UV-Vis, the photocatalysis degradation efficiency was studied as well. The results showed that the SnO2/ TiO2:Cu2+films were anatase structure, the surface were flat and stable without obvious crack, average diameter was about 20 nm. EDS indicated that Cu was introduced to TiO2 stratum of the SnO2TiO2 films ; UV-Vis showed the absorbance at visible region increased comparing to pure TiO2 and mixed SnO2TiO2 system. The degradation experiment under UV light showed degradation efficiency of SnO2/ TiO2: Cu2+films was higher compared with the mixed structure films, When the doping amount of Cu increased to 10% (mole fraction), the photocatalysis degradation efficiency reached its maximum.

2014 ◽  
Vol 809-810 ◽  
pp. 573-577
Author(s):  
Jing Sheng Zuo ◽  
Chang Ping Wei ◽  
Chun Jia Peng ◽  
Rui Ying He ◽  
Guo Dong Wang

Nitrogen-doped nanoTiO2 sol was prepared by sol-gel method. The obtained sol was coated onto glass substrates by spin coating method, followed by drying at low temperature and calcined at high temperature. The films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and ultraviolet-visible spectra (UV-Vis) . The XRD spectra showed that the crystal type of N-doped TiO2 films was anatase. The SEM images showed that the surface of films were flat without obvious crack and average diameter was about 20 nm. The UV-Vis spectra showed that the absorbance of N-doped TiO2 films at ultraviolet region increased. N-doping caused photocatalysis response wavelength to turn longer. The photocatalytic activity of N-doped TiO2 films was researched through the degradation experiment of methyl orange under ultraviolet light. Higher photocatalytic degradation efficiency was exhibited compared to the pure TiO2 films.


2016 ◽  
Vol 852 ◽  
pp. 1118-1122
Author(s):  
Rui Ying He ◽  
Chang Ping Wei ◽  
Guo Dong Wang ◽  
Jing San

By using sol-gel method, Nb/SnO2 gel was prepared,and spin coating method was used to coat on glass substrates, which dried and calcined to obtain a homogeneous Nb / SnO2 composite films.Under the same experimental conditions, the different doping amount of nickel, calcination temperature on the structure and morphology of Nb/SnO2 film were discussed. By using XRD, IR, SEM and other testing methods, the structure and morphology of Nb / SnO2 composite film were characterized.At 500 °C, the film particle had high crystallization and small size,and the surface of the film was well-distributed.Its optical and electrical properties were tested by the ultraviolet-visible spectrophotometer and four-probe resistivity meter.UV-Vis spectra showed that Nb / SnO2 film absorbance in the near ultraviolet region had increased significantly, but the absorbance showed a downward trend with the increasing amount of Nb5+ doped;Conductivity analysis showed: Nb5+ doping amount of 8% (the amount of material), the conductivity of Nb/SnO2 composite films was best.


2019 ◽  
Vol 36 (1) ◽  
pp. 8-13 ◽  
Author(s):  
Chee Yong Fong ◽  
Sha Shiong Ng ◽  
NurFahana Mohd Amin ◽  
Fong Kwong Yam ◽  
Zainuriah Hassan

Purpose This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection. Design/methodology/approach GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured. Findings The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability. Originality/value This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.


2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
V. L. Chandraboss ◽  
B. Karthikeyan ◽  
J. Kamalakkannan ◽  
S. Prabha ◽  
S. Senthilvelan

The TiO2/SiO2 and ZnO/SiO2 composite films were prepared by sol-gel dip coating method. The surface morphology and crystal structure of thin films were characterized by means of scanning electron microscopy (SEM) with elementary dispersive X-ray analysis (EDX) and X-ray diffractometer (XRD). Optical properties of films have been investigated using ultraviolet and visible spectroscopy (UV-visible spectroscopy). The photocatalytic activity was established by testing the degradation and decolorization of methyl green (MG) from aqueous solution with artificial UV-light.


2020 ◽  
pp. 2050044
Author(s):  
SAHAR MORADI ◽  
HASSAN SEDGHI

Nanostructured Fe:SnO2 thin films were deposited on glass substrates through sol–gel spin coating method. Films were synthesized with different iron quantities including 0%, 4%, 8% and 12% (wt.%). The effects of Fe concentration on optical properties of films were investigated by spectroscopic ellipsometry (SE) technique. SE measured ([Formula: see text]) parameters for films in the wavelength range between 300[Formula: see text]nm to 800[Formula: see text]nm. Optical properties including the refractive index, extinction coefficient, transmittance, dielectric constants and optical conductivity were determined by fitting the SE measured ([Formula: see text]) parameters and data obtained from the optical model-based analysis. Results showed that the transmittance values increase by increment of Fe concentration from 0% to 12%. The bandgap energy ([Formula: see text] of prepared thin films was also calculated. [Formula: see text] values were between 3.44 and 3.58[Formula: see text]eV. Dispersion parameters including the high frequency dielectric constant ([Formula: see text] and the ratio of free carrier concentration to effective mass (N/m[Formula: see text] were then obtained for the prepared films.


2013 ◽  
Vol 334-335 ◽  
pp. 60-64 ◽  
Author(s):  
Mohammad Reza Loghman-Estark ◽  
Reza Shoja Razavi ◽  
Hossein Edris

Scandia, yttria doped zirconia ((ZrO2)0.96(REO1.5)0.04(RE=Sc3+, Y3+)) nanoparticles were prepared by the modified sol-gel method. The microstructure of the products was characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy. Thermal stabillity of SYSZ nanocrystals were also investigated. The SYSZ nanocrystals synthesized with EGM:Zr+4mole ratio 4:1, calcined at 700°C, have average diameter of ~20 nm.


2014 ◽  
Vol 903 ◽  
pp. 73-77
Author(s):  
Peh Ly Tat ◽  
Karim bin Deraman ◽  
Rosli Hussin ◽  
Wan Nurulhuda Wan Shamsuri ◽  
Zuhairi Ibrahim

ZnO thin films were deposited on the glass substrates via the sol-gel dip coating method. The films were annealed at various temperatures ranging from 350 °C to 550 °C. X-ray diffraction (XRD), and atomic force microscopy (AFM) were used to investigate the effect of annealing temperature on the structural and morphology properties of the films. The as grown films exhibited amorphous pattern while annealed films were polycrystalline structure with (002) preferential growth along c-axis orientation. The AFM micrographs revealed that the RMS roughness of the films increased as the annealing temperature increased. The grain size was ranging from 32.1 nm to 176.0 nm as the annealing temperature increased from 350 °C to 450 °C and decreased to 56.1 nm for 550 °C.


2010 ◽  
Vol 168-170 ◽  
pp. 2348-2351
Author(s):  
Lazaro De Jesus Dominguez Gallegos ◽  
Angélica Silvestre López Rodríguez ◽  
Pio Sifuentes Gallardo ◽  
Miguel Angel Hernández Rivera ◽  
María Guadalupe Garnica Romo ◽  
...  

Indium stannate (InSnO3) films doping with small amounts of copper are made highly useful as architectural window coatings. Indium-tin-oxide (ITO) has attracted intense interest due to some of its unique characteristics; it has high optical transmittance in the visible region, low electric resistivity, and chemical stability. Therefore, ITO thin films have been found to play an important role in opto-electronic applications. In this work, uniform and transparent ITO films were deposited onto glass substrates using a sol-gel process. The initial sols were prepared by mixing solutions of indium chloride prepared in anhydrous ethanol with tin chloride and mechanically stirring and refluxed 2 hours and aged 2 week, the resultant mixture until a clear and sticky coating sol was obtained. The glass substrates were spin-coated and annealed at 500 °C. Because annealing conditions affect the microstructures, the properties of the resultant ITO films can be controlled. The optical transmittance of 200 nm thick ITO film was more than 80% in the visible region. The surface morphology examined by SEM appears to be uniform over large surface areas. The structural, microstructural and optical properties of the coatings and powders made from the sols were extensively characterized by using XRD, AFM and spectrophotometer techniques


2015 ◽  
Vol 1109 ◽  
pp. 593-597
Author(s):  
M.F. Nasir ◽  
Mohd Hannas ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop

This project has been focused on the electrical and optical properties on the effect of Indium doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different In dopant concentrations at 1 at%, 1.5 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 oC. In doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-Vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% In doping concentration which is 8.27× 103Ωcm-1The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.


2010 ◽  
Vol 09 (04) ◽  
pp. 355-358 ◽  
Author(s):  
T. S. SENTHIL ◽  
M. THAMBIDURAI ◽  
N. MUTHUKUMARASAMY ◽  
R. BALASUNDARAPRABHU

TiO2 thin films have been deposited onto well cleaned glass substrates by sol–gel spin coating method. The prepared TiO2 films have been annealed at different temperatures (350°C, 450°C and 550°C). The structural properties of the films have been studied using X-ray diffraction method and High Resolution Transmission Electron Microscope (HRTEM). The as-deposited films have been found to be amorphous in nature. The crystalline quality has been observed to improve with annealing temperature. The annealed TiO2 films have been found to exhibit anatase phase. The optical properties have been studied using transmittance spectrum.


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