Highly selective NO2 sensor based on p-type nanocrystalline NiO thin films prepared by sol–gel dip coating

2018 ◽  
Vol 44 (1) ◽  
pp. 753-759 ◽  
Author(s):  
Sikai Zhao ◽  
Yanbai Shen ◽  
Pengfei Zhou ◽  
Jin Zhang ◽  
Wei Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dip Coating ◽  
No2 Sensor ◽  
P Type

Resistive Switching Behaviour of Dip Coated ZnO Films with the Changing with Drawal Speed

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Thin Film Thickness ◽  
Withdrawal Speed ◽  
Current Voltage ◽  
P Type

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.

Photocatalytic Degradation of Methylene Blue by NiO Thin Films under Solar Light Irradiation

2019 ◽  
Vol 56 ◽  
pp. 152-157 ◽  
Author(s):  
Abdelouahab Noua ◽  
Hichem Farh ◽  
Rebai Guemini ◽  
Oussama Zaoui ◽  
Tarek Diab Ounis ◽  
...  
Keyword(s):  
Thin Films ◽  
Methylene Blue ◽  
Photocatalytic Activity ◽  
Sol Gel ◽  
Visible Region ◽  
Optical Transmittance ◽  
Dip Coating ◽  
Light Irradiation ◽  
Solar Light ◽  
Solar Light Irradiation

Nickel oxide (NiO) thin films were successfully deposited by sol-gel dip-coating method on glass substrates. The structural, morphological and optical properties in addition to the photocatalytic activity of the prepared films were investigated. The results show that the films have a polycrystalline NiO cubic structure with dense NiO grains and average optical transmittance in the visible region. The photocatalytic properties of the films were studied through the degradation of methylene blue and 89% of degradation was achieved for 4.5h of solar light irradiation exposure which indicates the capability of NiO photocatalytic activity.

The effect of the withdrawal speed on properties of nickel oxide thin films

2019 ◽  
Vol 234 (10) ◽  
pp. 647-655
Author(s):  
Zohra Nazir Kayani ◽  
Atiqa Aslam ◽  
Rabia Ishaque ◽  
Syeda Nosheen Zahra ◽  
Hifza Hanif ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Band Gap ◽  
Sol Gel ◽  
Average Crystallite Size ◽  
Dip Coating ◽  
Oxide Thin Films ◽  
Withdrawal Speed ◽  
Sem Micrograph ◽  
Nickel Oxide Thin Films

Abstract Nickel oxide thin films have been prepared by sol-gel dip-coating technique on glass substrate. It is shown that nickel oxide thin films have poly crystalline nature. Nickel oxide thin films exhibit high transmission (39–85%) in the wavelength range of 400–900 nm, strong absorption between 300 and 400 nm wavelengths and decrease of band gap values are in the range 3.69–3.27 eV with increase of withdrawal speed. High band gap at low withdrawal speed is because of the small average crystallite size, which decreases with increase in withdrawal speed. The SEM micrograph shows cubic crystallites and surface of thin films become dense, smooth and homogeneous with an increase in withdrawal speed. Assessment of nickel oxide deposition conditions provides gateway for effective and cheap solar cells.

Effect of aging heat time and annealing temperature on the properties of nanocrystalline tin dioxide thin films

2017 ◽  
Vol 31 (12) ◽  
pp. 1750114
Author(s):  
Imad H. Kadhim ◽  
H. Abu Hassan
Keyword(s):  
Thin Films ◽  
Tin Dioxide ◽  
Sol Gel ◽  
Stable Solution ◽  
Solution Viscosity ◽  
Pure Ethanol ◽  
Rutile Structure ◽  
Heat Time ◽  
Chloride Dihydrate ◽  
P Type

Nanocrystalline tin dioxide (SnO2) thin films have been successfully prepared by sol–gel spin-coating technique on p-type Si (100) substrates. A stable solution was prepared by mixing tin(II) chloride dihydrate, pure ethanol, and glycerin. Temperature affects the properties of SnO2 thin films, particularly the crystallite size where the crystallization of SnO2 with tetragonal rutile structure is achieved when thin films that prepared under different aging heat times are annealed at 400[Formula: see text]C. By increasing aging heat time in the presence of annealing temperatures the FESEM images indicated that the thickness of the fabricated film was directly proportional to solution viscosity, increasing from approximately 380 nm to 744 nm, as well as the crystallization of the thin films improved and reduced defects.

Optical, magnetic and structural properties of Cr-doped ZnO thin films by sol–gel dip-coating method

2017 ◽  
Vol 4 (9) ◽  
pp. 096403 ◽  
Author(s):  
Zohra N Kayani ◽  
Marya Siddiq ◽  
Saira Riaz ◽  
Shahzad Naseem
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Coating Method ◽  
Doped Zno ◽  
Dip Coating Method

Preparation and characterization of V2O5 doped SiO2-TiO2 thin films

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Gel Technique

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.

Sol-gel synthesis and characterization of Ag nanoparticles in ZrO2 thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2541-2546 ◽  
Author(s):  
Eisuke Yokoyama ◽  
Hironobu Sakata ◽  
Moriaki Wakaki
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Composite Films ◽  
Dip Coating ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
Silver Surface ◽  
Molar Ratios ◽  
Sol Gel Synthesis

ZrO2 thin films containing silver nanoparticles were prepared using the sol-gel method with Ag to Zr molar ratios [Ag]/[Zr] = 0.11, 0.25, 0.43, 0.67, 1.00, 1.50, and 2.33. After dip coating on glass substrate, coated films were annealed at 200 and 300 °C in air. X-ray diffraction peaks corresponding to crystalline Ag were observed, but a specific peak corresponding to ZrO2 was not observed. At the molar ratio [Ag]/[Zr] = 0.25, the particle size of Ag distributed broadly centered at 17 nm for an annealing temperature of 200 °C and at 25 nm for 300 °C. The films annealed in air at 200 °C showed an absorption band centered at 450 nm because of the silver surface plasmon resonance, whereas films heated at 300 °C in air caused a red shift of the absorption to 500 nm. The absorption peak was analyzed using the effective dielectric function of Ag-ZrO2 composite films modeled with the Maxwell-Garnett expression.

scholarly journals Enhanced visible transmittance and reduced transition temperature for VO2 thin films modulated by index-tunable SiO2 anti-reflection coatings

RSC Advances ◽  
2018 ◽  
Vol 8 (51) ◽  
pp. 28953-28959 ◽  
Author(s):  
Maodong Zhu ◽  
Hongji Qi ◽  
Bin Wang ◽  
Hu Wang ◽  
Dongping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Coating Technique ◽  
Infrared Transmittance ◽  
Visible Transmittance ◽  
P Index ◽  
Dip Coating Technique ◽  
Vo2 Thin Films

Index-tunable anti-reflection SiO2 coatings prepared on the surface of VO2 films by sol–gel dip-coating technique to enhance the visible and infrared transmittance of SiO2/VO2 films.

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

2021 ◽  
Author(s):  
Ahmed ZITI ◽  
Bouchaib HARTITI ◽  
Amine BELAFHAILI ◽  
Hicham LABRIM ◽  
Salah FADILI ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sol Gel ◽  
Dip Coating ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Uv Visible ◽  
The Impact ◽  
Scanning Electron

Abstract Quaternary semiconductor Cu2NiSnS4 thin film was made by the sol-gel method associated to dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including: X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDS), UV-visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu2NiSnS4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increase with from 6.30 to 9.52 with dip-coating cycle augmented. Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm− 1. EDS investigations showed near-stoichiometry of CNTS sample deposited at 5 cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV-visible spectroscopy indicated that the optical absorption values are larger than 104 cm− 1, Estimated band gap energy of CNTS absorber layers decrease from 1.64 to 1.5 eV with dip-coating cycle increased. The electrical conductivity of CNTS thin films increase from 0.19 to 4.16 (Ω cm)-1. These characteristics are suitable for solar cells applications.

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