The Identification of the Mineralogical Composition of Converter Slags on the Basis of Testing and Diagnostics

2020 ◽  
Vol 989 ◽  
pp. 248-253
Author(s):  
Margarita A. Goncharova ◽  
Irina A. Tkacheva ◽  
Maxim G. Zagorulko
Keyword(s):  
Converter Slag ◽  
Mineralogical Composition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Technogenic Waste ◽  
Slag Structure ◽  
Metallurgical Slags ◽  
New Construction ◽  
Microscopy Method

The paper describes a methodological system of testing and diagnosing technogenic waste to create new construction composites. The converter slag structure is shown both in the form of lump materials and on the nanoscale. The results of determining the mineralogical composition of converter slags are also presented. Petrographic research of slags and their X-ray diffraction analysis are conducted with the results shown. Special attention is paid to the atomic force microscopy method. It shows that the composing minerals have unique features of the surface topography with the indication of averaged statistical data of characteristics. In further research, this experience can significantly ease the task of determining the bi-calcium silicate in the structure of other types of metallurgical slags. The information about the morphological features of the structure of various minerals will help to use this method as independent in determining the mineralogical composition of the observed materials.

scholarly journals Novel Solid Silicon Oxycarbide Unmodified Carbon Nanotube Composite Coating: Structure, Topography and Mechanical Properties

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 920
Author(s):  
Wiktor Niemiec ◽  
Maria Owińska ◽  
Anna Ferenc ◽  
Michał Szuwarzyński ◽  
Elżbieta Długoń
Keyword(s):  
Carbon Nanotube ◽  
Dip Coating ◽  
Silicon Oxycarbide ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Novel Approach ◽  
Carbon Nanotube Dispersion ◽  
Microscopy Method ◽  
Nanotube Dispersion

A silicon oxycarbide-carbon nanotube coating on steel was synthesized using a novel approach utilizing unmodified carbon nanotubes (CNT), silane surfactant and large monomer-based silsesquioxane sol. This enabled the creation of very stable carbon nanotube dispersion, which in turn resulted in homogenous layers obtained in a simple dip-coating process. The samples were annealed in 800 °C in argon to obtain a uniform glassy silicon oxycarbide-based composite from a silsesquioxane precursor. The layers’ morphology and nanomechanical properties were investigated using a number of methods, including infrared spectroscopy (IR), X-ray diffraction (XRD), scanning electron microscopy (SEM), nanoindentation, Accelerated Property Mapping (XPM) and Quantitative Nanomechanical Mapping – an Atomic Force Microscopy method (QNM-AFM).

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Low Molecular Weight Microfibers with Light Sensing Properties

2017 ◽  
Vol 54 (4) ◽  
pp. 655-658
Author(s):  
Andrei Bejan ◽  
Dragos Peptanariu ◽  
Bogdan Chiricuta ◽  
Elena Bicu ◽  
Dalila Belei
Keyword(s):  
Molecular Weight ◽  
Low Molecular Weight ◽  
X Ray Diffraction ◽  
Aromatic Rings ◽  
X Ray ◽  
Force Microscopy ◽  
Light Sensing ◽  
Sensing Applications ◽  
Atomic Force ◽  
Low Molecular Weight Compounds

Microfibers were obtained from organic low molecular weight compounds based on heteroaromatic and aromatic rings connected by aliphatic spacers. The obtaining of microfibers was proved by scanning electron microscopy. The deciphering of the mechanism of microfiber formation has been elucidated by X-ray diffraction, infrared spectroscopy, and atomic force microscopy measurements. By exciting with light of different wavelength, florescence microscopy revealed a specific optical response, recommending these materials for light sensing applications.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

scholarly journals Ultrafine metal-polymer catalysts based on polyconjugated systems for Fisher–Tropsch synthesis

2020 ◽  
Vol 92 (6) ◽  
pp. 977-984
Author(s):  
Mayya V. Kulikova ◽  
Albert B. Kulikov ◽  
Alexey E. Kuz’min ◽  
Anton L. Maximov
Keyword(s):  
Tropsch Synthesis ◽  
X Ray Diffraction ◽  
Fischer Tropsch ◽  
Force Microscopy ◽  
Composite Catalysts ◽  
Fe Catalyst ◽  
Atomic Force ◽  
And Function ◽  
Metal Polymer

AbstractFor previously studied Fischer–Tropsch nanosized Fe catalyst slurries, polymer compounds with or without polyconjugating structures are used as precursors to form the catalyst nanomatrix in situ, and several catalytic experiments and X-ray diffraction and atomic force microscopy measurements are performed. The important and different roles of the paraffin molecules in the slurry medium in the formation and function of composite catalysts with the two types of aforementioned polymer matrices are revealed. In the case of the polyconjugated polymers, the alkanes in the medium are “weakly” coordinated with the metal-polymer composites, which does not affect the effectiveness of the polyconjugated polymers. Otherwise, alkane molecules form a “tight” surface layer around the composite particles, which create transport complications for the reagents and products of Fischer-Tropsch synthesis and, in some cases, can change the course of the in situ catalyst formation.

scholarly journals Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 823
Author(s):  
Shizheng Yang ◽  
Hongliang Lv ◽  
Likun Ai ◽  
Fangkun Tian ◽  
Silu Yan ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Wafer Level ◽  
X Ray Diffraction ◽  
Nucleation Layer ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Growth Method ◽  
Step Growth ◽  
Microscopy Images

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

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