scholarly journals Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 823
Author(s):  
Shizheng Yang ◽  
Hongliang Lv ◽  
Likun Ai ◽  
Fangkun Tian ◽  
Silu Yan ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Wafer Level ◽  
X Ray Diffraction ◽  
Nucleation Layer ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Growth Method ◽  
Step Growth ◽  
Microscopy Images

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

Self-organization of phthalocyanines on Al2O3 (1120) in aligned and ordered films

2004 ◽  
Vol 19 (7) ◽  
pp. 2061-2067 ◽  
Author(s):  
E. Barrena ◽  
J.O. Ossó ◽  
F. Schreiber ◽  
M. Garriga ◽  
M.I. Alonso ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Self Organization ◽  
X Ray Diffraction ◽  
Direction Parallel ◽  
Force Microscopy ◽  
Molecular Arrangement ◽  
Atomic Force ◽  
Organization Process ◽  
Microscopy Images ◽  
Molecular Stacking

We studied the self-organization process of F16CuPc films (20–30 ML) on stepped Al2O3 (1120) substrates. X-ray diffraction measurements revealed a highly ordered layered structure with the molecules in a nearly upright configuration. The morphology, investigated by atomic force microscopy, consisted of long (several microns) and narrow (20–100 nm) needlelike terraces unidirectionally aligned along one of the main crystallographic directions of the Al2O3 (1120) surface. High resolution atomic force microscopy images revealed in-plane molecular order with the molecular stacking direction parallel to the needlelike terraces. Such anisotropic morphology is the result of a self-organization process of F16CuPc in elongated crystallites driven to a preferential orientation by the interaction with the substrate. Spectroscopic ellipsometry showed that these films exhibit anisotropic optical properties correlated with the molecular arrangement.

Drastic Change in the Gan Film Quality by In-Situ Controlling Surface Reconstructions In Gsmbe

1997 ◽  
Vol 482 ◽  
Author(s):  
X. Q. Shen ◽  
S. Tanaka ◽  
S. Iwai ◽  
Y. Aoyagi
Keyword(s):  
Growth Conditions ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Surface Reconstructions ◽  
Gan Film

AbstractGaN growth was performed on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

GaN Epitaxial Growth Process at High Growth Temperature by NH3 Source Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
Naoki Ohshima ◽  
Akihiro Sugihara ◽  
Naoya Yoshida ◽  
Naohiko Okabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Layer ◽  
Growth Temperature ◽  
Molecular Beam ◽  
High Growth ◽  
High Energy ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Surface Morphologies

ABSTRACTWe have investigated in detail dependence of annealing GaN buffer layer and GaN growth processes on a sapphire substrate at a high temperature of 1000 degree C. The GaN layers are grown by NH3 gas source molecular beam epitaxy. The behavior of GaN buffer and epitaxial layer has been observed by in-situ reflection high-energy electron diffraction and the surface morphologies of as-grown and chemically etched GaN layers by atomic force microscopy. It is found that there is distinct difference in the surface morphology of epitaxial GaN layer between at growth temperatures of below 950 degree C and that of 1000 degree C. It has been considered that the growth kinetics of GaN epitaxial layer extremely depends on the growth temperature.

Effects of Growth Temperature on the Structural Properties of Zinc Oxide Nanograins Deposited by RF Magnetron Sputtering

2014 ◽  
Vol 895 ◽  
pp. 500-504
Author(s):  
N. Ameera ◽  
A. Shuhaimi ◽  
S. Najwa ◽  
K.M. Hakim ◽  
M. Mazwan ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Growth Temperature ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force

Nanograins zinc oxide (ZnO) withc-axis preferred orientation was deposited on glass substrates by RF magnetron sputtering. It was performed with a ZnO target with 99.999% purity at RF power of 200 W. The deposition was carried out in argon and oxygen ambient at the ratio flow-rates of 10 and 5 sccm respectively, with total deposition time of 1 hour. The films were grown atgrowth temperatures were specified at RT, 100, 200, 300, 400 and 500°C. The effects of the growth temperature on the ZnO structural property was investigated by x-ray diffraction (XRD). The best ZnO crystalline quality obtained at growth temperature, TGof 300°C was further characterized by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM).

Correlation between Extended Defects and Surface Morphology in MBE Grown InAs/GaAs Heterostructures

1995 ◽  
Vol 399 ◽  
Author(s):  
M.R. Bruni ◽  
G. Padeletti ◽  
M.G. Simeone ◽  
L. Francesio ◽  
P. Franzosi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Temperature ◽  
Crystal Defects ◽  
Extended Defects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTInAs single layers were grown by Molecular Beam Epitaxy on nominally (001) oriented GaAs substrates at growth temperatures ranging from 350 °C to 500 °C and thicknesses between 1 nm and 6 μm. A systematic study of the influence of growth temperature and thickness on crystal defects and surface morphology is discussed by comparing High Resolution X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy investigations.Surface hexagonal shaped holes were observed to develop at the lowest temperatures starting from an heterolayer thickness of 50 nm. Both misfit and threading dislocations were revealed; moreover the correlation between hexagonal shaped surface holes and mixed dislocations, with the component of the Burgers vector (b) along the growth axis larger than the minimum interatomic distance, is discussed. The holes increase in size and decrease in density by increasing the layer thickness. An almost complete surface planarization is observed at a thickness of 6 μm by increasing the growth temperature up to 500 °C.

Growth temperature - phase stability relation in In1-xGaxN epilayers grown by high-pressure CVD

2009 ◽  
Vol 1202 ◽  
Author(s):  
Goksel Durkaya ◽  
Mustafa Alevli ◽  
Max Buegler ◽  
Ramazan Atalay ◽  
Sampath Gamage ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Stability ◽  
Growth Temperature ◽  
Single Phase ◽  
Chemical Vapor ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pressure Chemical

AbstractThe influence of the growth temperature on the phase stability and composition of single-phase In1-xGaxN epilayers has been studied. The In1-xGaxN epilayers were grown by high-pressure Chemical Vapor Deposition with nominally composition of x = 0.6 at a reactor pressure of 15 bar at various growth temperatures. The layers were analyzed by x-ray diffraction, optical transmission spectroscopy, atomic force microscopy, and Raman spectroscopy. The results showed that a growth temperature of 925°C led to the best single phase InGaN layers with the smoothest surface and smallest grain areas

STRUCTURAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS GROWN ON FLEXIBLE POLYIMIDE SUBSTRATES

2007 ◽  
Vol 14 (04) ◽  
pp. 801-805 ◽  
Author(s):  
DONG ICK SON ◽  
JUNG WOOK LEE ◽  
DEA UK LEE ◽  
TAE WHAN KIM ◽  
WON KOOK CHOI
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diffraction Patterns ◽  
Microscopy Images

Nominally undoped ZnO thin films were grown on polyimide (PI) substrates at various temperatures by using radio-frequency magnetron sputtering. Atomic force microscopy images showed that the root mean squares of the average surface roughnesses for the ZnO thin films grown on the PI substrates at 27°C, 100°C, 200°C, and 300°C were 4.08, 4.50, 4.18, and 3.89 nm, respectively. X-ray diffraction patterns showed that the crystallinity of the ZnO films had a preferential (0001) direction and that the full width at half-maxima for the (0002) ZnO diffraction peak for the ZnO thin films grown on the PI substrates at 27°C, 100°C, 200°C, and 300°C were 0.22, 0.22, 0.22, and 0.23, respectively. The average optical transmittances in the visible ranges between 550 and 750 nm for the ZnO /PI heterostructures grown at 27°C, 100°C, 200°C, and 300°C were 87%, 83%, 87%, and 78%, respectively.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Low Molecular Weight Microfibers with Light Sensing Properties

2017 ◽  
Vol 54 (4) ◽  
pp. 655-658
Author(s):  
Andrei Bejan ◽  
Dragos Peptanariu ◽  
Bogdan Chiricuta ◽  
Elena Bicu ◽  
Dalila Belei
Keyword(s):  
Molecular Weight ◽  
Low Molecular Weight ◽  
X Ray Diffraction ◽  
Aromatic Rings ◽  
X Ray ◽  
Force Microscopy ◽  
Light Sensing ◽  
Sensing Applications ◽  
Atomic Force ◽  
Low Molecular Weight Compounds

Microfibers were obtained from organic low molecular weight compounds based on heteroaromatic and aromatic rings connected by aliphatic spacers. The obtaining of microfibers was proved by scanning electron microscopy. The deciphering of the mechanism of microfiber formation has been elucidated by X-ray diffraction, infrared spectroscopy, and atomic force microscopy measurements. By exciting with light of different wavelength, florescence microscopy revealed a specific optical response, recommending these materials for light sensing applications.

scholarly journals Simulating noncontact atomic force microscopy images

2019 ◽  
Vol 3 (11) ◽  
Author(s):  
James R. Chelikowsky ◽  
Dingxin Fan ◽  
Alex J. Lee ◽  
Yuki Sakai
Keyword(s):  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Images
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