Hybrid Structure of Organic-Inorganic Photovoltaic Fast Carrier Transport

2020 ◽  
Vol 30 ◽  
pp. 19-26
Author(s):  
Mohammed T. Hussein ◽  
Fouad A. Senaed
Keyword(s):  
Carrier Transport ◽  
Copper Phthalocyanine ◽  
Pulsed Laser ◽  
Hybrid Structure ◽  
Laser Deposition ◽  
Visible Absorption ◽  
Carrier Transfer ◽  
Ft Ir ◽  
Organic Copper ◽  
Different Thickness

Hybrid organic Copper phthalocyanine (CuPc) –inorganic Cadmium Sulfide (CdS), double layered structures were deposited on glass substrate at different thickness using Pulsed Laser Deposition (PLD) with Q-Switching Nd: YAG laser with energy (240,500 mJ) at (25 Celsius) and within vacuum conditions of (10-3 torr). The photoluminescence (PL) is showing that the CdS quenches emissions from CuPc indicating the carrier transfer to the CdS. Also, the CuPc/CdS hybrid structures have the capability for various absorptions as can be seen in the ultraviolet-visible absorption researches and the charge carrier extractions from PL analysis have been adequate for the solar cell applications. FT-IR spectra have been specified for CdS and CuPc.

Study the Nonlinearity Characteristics of Organic-Semiconductor (CuPc) Prepared Via Pulsed Laser Deposition Technique with Different Thickness

2019 ◽  
Vol 27 ◽  
pp. 11-20 ◽  
Author(s):  
Mohammed T. Hussein ◽  
Reem R. Mohammed
Keyword(s):  
Refractive Index ◽  
Absorption Spectrum ◽  
Pulsed Laser Deposition ◽  
Copper Phthalocyanine ◽  
Wave Length ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Linear Refractive Index ◽  
Non Linear

The optical absorption spectrum, Photoluminesces, and non-linear optical properties for Copper Phthalocyanine (CuPc) thin films (150,300 and 450 nm) respectively have been investigated via pulsed laser deposition technique. The absorption spectrum indicted that there are two bands one in UV around 330 nm which called B-band and the second in Visible around 650nm which called Q-band. Photoluminescence spectrum related to deposit samples has been determined with different thicknesses. From closed and open aperture Z-scan data non-linear absorption coefficient and non-linear refractive index have been calculated respectively using He-Ne laser which have beam waist of (24.2 μm), wave-length of (632.8 nm) and Rayleigh thickness was 2.9 mm. Through dividing closed by open apertures, non-linear refractive index was calculated accurately. Finally, the study also showed the suitability of the deposited films as an optical limiter at the wavelength 632.8 nm.

Temperature Dependent Micro-Raman Scattering of Sr0.35Ba0.65TiO3 Film Grown by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
Sampriti Sen ◽  
E. Ching-Prado ◽  
A. Reynés-Figueroa ◽  
R. S. Katiyar ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Ceramic Material ◽  
Normal Modes ◽  
Pulsed Laser ◽  
Rhombohedral Phase ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Ft Ir

AbstractA film of Sr0.35Ba0.65TiO3 (SBT) has been grown in situ by pulsed laser deposition on (001) LaAlO3 single crystal. From X-ray diffraction studies the sample is found to be in single phase and well oriented. Raman spectrum of the SBT film shows bands around 178, 219, 296, 513, 571 and 741 cm”. The spectrum is similar to that found in SBT ceramic material, but the frequencies of the phonons are shifted. This can be explained if the film is under stress due to the presence of defects. The bands at 296 and 741cm−1 correspond to the B1 and A1(LO) normal modes of the BaTiO3 (BT) system, and they are representative of the BT tetragonal phase, which at first glance appears to contradict earlier structural symmetry assignment for SBT(x=0.35) film at room temperature. Micro-Raman measurements from different regions of the film indicate that the SBT film is homogeneous. The bands at 296 and 741 cm−1 are broader in comparison to those in BT single crystal and SBT ceramic material. Temperature dependent halfwidths of these modes suggest strong contribution of defects. Temperature dependent results are discussed in terms of anharmonic contributions involving three and four phonon processes as well as defects. Also, the orthorhombic and rhombohedral phase transitions are discussed. Finally, SEM/EDAX and FT-IR techniques have been used for the structural characterization.

Electric Transport Characteristics of Gallium Iron Oxide Epitaxial Thin Film

MRS Advances ◽  
2017 ◽  
Vol 2 (56) ◽  
pp. 3459-3464 ◽  
Author(s):  
Tsukasa Katayama ◽  
Shintaro Yasui ◽  
Yosuke Hamasaki ◽  
Mitsuru Itoh
Keyword(s):  
Thin Film ◽  
Iron Oxide ◽  
Pulsed Laser ◽  
Antiferromagnetic Interaction ◽  
Laser Deposition ◽  
Hopping Conduction ◽  
Electric Transport ◽  
Epitaxial Thin Film ◽  
Carrier Transfer ◽  
Maximum Value

ABSTRACTA Ga0.8Fe1.2O3 epitaxial thin film was fabricated on a SrTiO3(111) substrate using pulsed laser deposition. The film is c-axis-oriented and has multiple in-plane domains. In-plane magnetization measurements show that it exhibits ferrimagnetic behavior with a Curie temperature (TC) of 290 K. The insulating film exhibits hopping conduction with a resistivity (ρ) of 4 × 105 Ωcm at 300 K. The ρ value is four orders lower than that of a BiFeO3 film, probably owing to the formation of multiple in-plane domains in the Ga0.8Fe1.2O3 film. Positive magnetoresistance with a maximum value of 3.5% near TC was observed, suggesting that antiferromagnetic interaction between Fe3+ ions decreases carrier transfer between the ions.

Pulsed Laser Deposition of Thin Silicon Nitride Films

1992 ◽  
Vol 285 ◽  
Author(s):  
Xiangqun Xu ◽  
Kanekazu Seki ◽  
Naiqun Chen ◽  
Hideo Okabe ◽  
Joan M. Frye ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Absorption Characteristic ◽  
Silicon Nitride Films ◽  
Ft Ir ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTABSTRACTPulsed laser deposition of compressed Si3N4 powder has been used to grow thin SiNx films on a variety of substrates at substrate temperatures ranging from room temperature to 350°C. Film composition was analyzed by Auger electron spectroscopy. The SiN0.33 films have a band gap of 5.60 eV as measured by UV absorption. The FT-IR spectrum shows an absorption characteristic of Si-N. The Si/N ratio in the deposited films corresponding to various substrate temperatures has also been determined.

Protein-Drug Interaction in the Nanocomposites Prepared by UV and IR Pulsed Laser Deposition

2004 ◽  
Vol 849 ◽  
Author(s):  
J. Sagawa ◽  
S. Nagare ◽  
M. Senna
Keyword(s):  
Secondary Structure ◽  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Vibrational Excitation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ir Laser ◽  
Ft Ir ◽  
Β Sheet ◽  
Protein Bovine Serum Albumin

ABSTRACTProtein (bovine serum albumin; BSA)-drug (indomethacin; IM) nanocomposites were prepared by pulsed laser deposition (PLD) at two wavelengths, infrared (1064nm) and ultraviolet (266nm), from uniformly dispersed mixture of BSA and IM as a target. Composite particulates under 50nm were obtained with the coexistence of larger agglomerates over 200nm. Primary structure of BSA is preserved after laser irradiation by both wavelengths. Effects of electronic and vibrational excitation by UV and IR laser respectively on the secondary structure of the nanocomposites were examined by Fourier transform infrared spectroscopy (FT-IR). Chemical shift towards lower wavenumber and a broadening of the amide I band due to PLD treatment were observed by FT-IR. From curve fitting of the amide I into five components, we found the decrease in the ratio of α-helical / β-sheet components with increasing the laser fluence. The secondary structure of BSA is more sensitive to the laser fluence than the wavelength.

In-Situ Optical Diagnostics During Pulsed-Laser Deposition of Magnetoresistive La-Ca-Mn-O Films on Silicon Substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
P.-J. Kung ◽  
J. E. Cosgrove ◽  
K. Kinsella ◽  
D. G. Hamblen
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Target Surface ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Ft Ir

AbstractDuring pulsed-laser deposition of La0.67Ca0.33MnO3 films on silicon substrates, a system that consists of visible optical-emission spectroscopy (OES) and Fourier transform infrared (FT-IR) spectroscopy is employed to perform in-situ diagnosis of the laser-induced plume and to monitor the substrate temperature and the film thickness. The effects of oxygen pressure, laser fluence, and distance from the target surface on emission spectra were studied. In FT-IR measurements, the slopes of the reflectance versus wavenumber curves were observed to increase with film thickness and hence with time, which provides end-point detection during the film growth. La0.67Ca0.33MnO3 films with (100), (110), and mixed orientations, depending on the substrate temperature, were deposited on yttria-stabilized zirconia (YSZ) buffered Si(100) and Si(111) substrates. In a magnetic field of 5 T, the maximum magnetoresistance (MR) values of 250% at 195 K and 164% at 140 K were observed in the as-deposited (110) and (100) films, respectively.

Corrosion Behaviors of Li-B-H Films in Air

2015 ◽  
Vol 1089 ◽  
pp. 185-189
Author(s):  
Zheng Wei Xiong ◽  
Wei Dong Wu
Keyword(s):  
Ambient Temperature ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Infrared Spectrometry ◽  
Fourier Transform Infrared Spectrometry ◽  
X Ray ◽  
Corrosion Behaviors ◽  
Ft Ir ◽  
Scanning Electron

In the present study, Li-B-H films contained LiBH4 and Li2B12H12 were fabricated under different hydrogen pressures (20, 70 Pa) at ambient temperature by pulsed laser deposition (PLD). The corrosion behaviors of the films were studied over a time of 1-24 h in the air at ambient temperature. Fourier transform infrared spectrometry (FT-IR), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) were used to analyze the formed oxidation film. The results indicated that an oxidation film with obvious cracks and holes were formed, which was composed by Li2B4O7 and Li2CO3. The films were mainly reacted with H2O and CO2, so the oxidation of Li-B-H could be prevented by avoiding exposed to air.

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