Carrier Transport through Grain Boundaries in Highly Transparent Conductive Ga-Doped ZnO Polycrystalline Films

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000186-000192
Author(s):  
Tetsuya Yamamoto ◽  
Tetsuya Yamamoto ◽  
Yasushi Sato ◽  
Hisao Makino ◽  
Naoki Yamamoto
Keyword(s):  
Grain Boundaries ◽  
Hall Mobility ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Arc Discharge ◽  
Small Contribution ◽  
Glass Substrates ◽  
High Carrier ◽  
Doped Zno ◽  
Grain Bulk

We investigated the effects of grain boundaries on the carrier mobility of polycrystalline highly transparent conductive Ga-doped ZnO (GZO) films with thicknesses in the range from 100 to 500nm on glass substrates at a temperature of 200°C. GZO films were prepared by ion-plating deposition with DC arc discharge. A systematic study has been made of the thickness dependence of the structural, electrical and optical properties of GZO films. The full width at half maximum (FWHMω) of the (0002) rocking curve was found to decrease with increasing thickness, whereas the grain size increased with increasing thickness. The comparison of the Hall mobility with the optical mobility calculated by analysis using the simple Drude model combined with the Tauc-Lorentz model of data obtained by spectroscopic ellipsometry (SE) demonstrates that grain boundaries present a significant obstacle to free carriers in GZO films with thicknesses of up to 344nm. In 344-nm-thick GZO films with a high carrier concentration of 1.23×1021 cm−3, the Hall mobility of 29cm2/Vs is close to the optical mobility, i.e. the carrier mobility in the grain bulk. In such films, a very low resistivity of 1.87×10−4 Ωcm was obtained. This indicates the very small contribution of grain boundaries to the total resistivity of the GZO films.

scholarly journals Coulomb drag transistor using a graphene and MoS2 heterostructure

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Youngjo Jin ◽  
Min-Kyu Joo ◽  
Byoung Hee Moon ◽  
Hyun Kim ◽  
Sanghyup Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Passive Layer ◽  
Strong Interactions ◽  
Practical Application ◽  
Coulomb Drag ◽  
Strong Coulomb ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag carriers in the passive layer. Here, we propose high-performance Gr/MoS2 heterostructure transistors operating via Coulomb drag, exhibiting a high carrier mobility (∼3700 cm2 V−1 s−1) and on/off-current ratio (∼108) at room temperature. The van der Waals gap at the Gr/MoS2 interface induces strong interactions between the interlayer carriers, whose recombination is suppressed by the Schottky barrier between p-Gr and n-MoS2, clearly distinct from the presence of insulating layers. The sign reversal of lateral voltage clearly demonstrates the Coulomb drag in carrier transport. Hole-like behavior of electrons in the n-MoS2 is observed in magnetic field, indicating strong Coulomb drag at low temperature. Our Coulomb drag transistor thus provides a shortcut for the practical application of 2D heterostructures.

Field Effect Mobility of F16PcCu Films in Various Gas Atmospheres

1999 ◽  
Vol 03 (07) ◽  
pp. 667-671 ◽  
Author(s):  
HIROKAZU TADA ◽  
HIROSHI TOUDA ◽  
MASAKI TAKADA ◽  
KAZUMI MATSUSHIGE
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Room Temperature ◽  
Gas Adsorption ◽  
Quick Recovery ◽  
Thermally Activated ◽  
High Carrier ◽  
Gas Molecules

The electron mobility of hexadecafluorophthalocyaninato-copper ( F 16 PcCu ) films was evaluated based on field effect measurements in vacuum and in various gas atmospheres. An Arrhenius plot of the mobility showed that the carrier transport followed a thermally activated hopping mechanism with an activation energy of 0.28 eV. The mobility evaluated for freshly prepared films in ultrahigh vacuum was 2.0 × 10−3 cm 2 V −1 s −1 at room temperature. The electrical conductivity and carrier density were 4.4 × 10−5 S cm −1 and 1.4 × 1017 cm −3 respectively. The high carrier density indicated the existence of impurities acting as electron donors in the films. The field effect carrier mobility increased to 5.7 × 10−3 cm 2 V −1 s −1 in NH 3 atmosphere (100%, 1 atm) and decreased by 75% in the presence of O 2 gas (100%, 1 atm). A quick recovery of mobility was observed when the gas molecules were evacuated, indicating a low capability of gas adsorption.

The Growth of Transparent Conductive Al-Doped ZnO Thin Films at Room Temperature

2007 ◽  
Vol 124-126 ◽  
pp. 211-214
Author(s):  
Sang Moo Park ◽  
Takashi Tomemori ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Electrical And Optical Properties ◽  
Flexible Display ◽  
Glass Substrates ◽  
Visible Transmittance ◽  
Flexible Solar Cell ◽  
Doped Zno

High-quality transparent conductive Al-doped ZnO (AZO) thin films were deposited by pulsed laser deposition on quartz glass substrates at room temperature. We varied the growth condition in terms of oxygen pressure. The structure and electrical and optical properties of the as-grown AZO films were mainly investigated. The AZO films formed at room temperature showed a low electrical resistivity of 3.01×10-4 ) cm, a carrier concentration of 1.12×1021 cm-3 and a carrier mobility of 18.59 cm2/Vs at an oxygen pressure of 10 mTorr. A visible transmittance of above 83% was obtained. The present results suggest that optimized AZO films should be very useful and effective for flexible display, top emission type of OLEDs and for various other kinds of optoelectronic devices such as flexible solar cell or passive photo device.

(Invited) Carrier Transport through Grain Boundaries in Highly Transparent Conductive Ga-Doped ZnO Films

2012 ◽  
Vol 45 (3) ◽  
pp. 401-410 ◽  
Author(s):  
T. Yamamoto ◽  
H. Song ◽  
H. Makino ◽  
N. Yamamoto
Keyword(s):  
Grain Boundaries ◽  
Carrier Transport ◽  
Zno Films ◽  
Doped Zno

scholarly journals High electrical conductivity and carrier mobility in oCVD PEDOT thin films by engineered crystallization and acid treatment

2018 ◽  
Vol 4 (9) ◽  
pp. eaat5780 ◽  
Author(s):  
Xiaoxue Wang ◽  
Xu Zhang ◽  
Lei Sun ◽  
Dongwook Lee ◽  
Sunghwan Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Radio Frequency Identification ◽  
Acid Treatment ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Great Promise ◽  
High Electrical Conductivity ◽  
High Carrier Mobility ◽  
High Carrier

Air-stable, lightweight, and electrically conductive polymers are highly desired as the electrodes for next-generation electronic devices. However, the low electrical conductivity and low carrier mobility of polymers are the key bottlenecks that limit their adoption. We demonstrate that the key to addressing these limitations is to molecularly engineer the crystallization and morphology of polymers. We use oxidative chemical vapor deposition (oCVD) and hydrobromic acid treatment as an effective tool to achieve such engineering for conducting polymer poly(3,4-ethylenedioxythiophene) (PEDOT). We demonstrate PEDOT thin films with a record-high electrical conductivity of 6259 S/cm and a remarkably high carrier mobility of 18.45 cm2V−1s−1by inducing a crystallite-configuration transition using oCVD. Subsequent theoretical modeling reveals a metallic nature and an effective reduction of the carrier transport energy barrier between crystallized domains in these thin films. To validate this metallic nature, we successfully fabricate PEDOT-Si Schottky diode arrays operating at 13.56 MHz for radio frequency identification (RFID) readers, demonstrating wafer-scale fabrication compatible with conventional complementary metal-oxide semiconductor (CMOS) technology. The oCVD PEDOT thin films with ultrahigh electrical conductivity and high carrier mobility show great promise for novel high-speed organic electronics with low energy consumption and better charge carrier transport.

The growth and investigation on Ga-doped ZnO single crystals with high thermal stability and high carrier mobility

CrystEngComm ◽  
2011 ◽  
Vol 13 (10) ◽  
pp. 3338 ◽  
Author(s):  
Wenwen Lin ◽  
Kai Ding ◽  
Zhang Lin ◽  
Jiye Zhang ◽  
Jiakui Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Single Crystals ◽  
Carrier Mobility ◽  
High Thermal Stability ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Doped Zno
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