A performance comparison of normally-off and normally-on SiC JFETs toward use in high-temperature power modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000098-000103
Author(s):  
R. Schrader ◽  
K. Speer ◽  
J. Casady ◽  
V. Bondarenko ◽  
D. Sheridan
Keyword(s):  
High Temperature ◽  
Performance Comparison ◽  
Design Factor ◽  
Fundamental Limitations ◽  
Power Modules ◽  
Extreme High Temperature ◽  
Effect Transistor ◽  
High Temperature Operation ◽  
State Resistance ◽  
Important Design

The high-temperature static and dynamic characteristics of the new 1200 V, 45 mΩ, 9 mm2 depletion-mode SiC vertical trench junction field-effect transistor (vtJFET) are compared with those of a 1200 V, 50 mΩ, 9 mm2 enhancement-mode SiC vtJFET. It is shown that both devices are fully capable of high-temperature operation and that each type has its own unique advantages. For applications operating in extreme high-temperature environments, the larger saturation current (~2.5x) and lower on-state resistance (~150 mΩ at 250 °C) of the depletion-mode SiC vtJFET provide very attractive performance at temperatures beyond silicon's fundamental limitations. In addition, operating the normally-on vtJFET at VGS less than 2 V reduces the gate drive's current requirements to a negligible level, which is an important design factor for high-temperature power modules that use multiple die in parallel.

Metallization Technology for High Current Density and High Temperature Operation Power Modules

2019 ◽  
Author(s):  
K. Sugiura ◽  
T. Iwashige ◽  
K. Tsuruta ◽  
Y. Sakuma ◽  
Y. Oda ◽  
...  
Keyword(s):  
High Temperature ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Power Modules ◽  
High Temperature Operation

Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation

2009 ◽  
Vol 1202 ◽  
Author(s):  
Hiroshi Kambayashi ◽  
Yuki Niiyama ◽  
Takehiko Nomura ◽  
Masayuki Iwami ◽  
yoshihiro Satoh ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Silicon Substrates ◽  
Enhancement Mode ◽  
Threshold Voltages ◽  
Source Voltage ◽  
Gan Hfet ◽  
Output Characteristics ◽  
High Temperature Operation ◽  
State Resistance

AbstractWe have demonstrated enhancement-mode n-channel gallium nitride (GaN) MOSFETs on Si (111) substrates with high-temperature operation up to 300 °C. The GaN MOSFETs have good normally-off operation with the threshold voltages of +2.7 V. The MOSFET exhibits good output characteristics from room temperature to 300 °C. The leakage current at 300°C is less than 100 pA/mm at the drain-to-source voltage of 0.1 V. The on-state resistance of MOSFET at 300°C is about 1.5 times as high as that at room temperature. These results indicate that GaN MOSFET is suitable for high-temperature operation compared with AlGaN/GaN HFET.

High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

2006 ◽  
Vol 53 (12) ◽  
pp. 2908-2913 ◽  
Author(s):  
Takehiko Nomura ◽  
Hiroshi Kambayashi ◽  
Mitsuru Masuda ◽  
Sonomi Ishii ◽  
Nariaki Ikeda ◽  
...  
Keyword(s):  
High Temperature ◽  
Breakdown Voltage ◽  
Fast Switching ◽  
High Breakdown Voltage ◽  
Gan Hfet ◽  
High Temperature Operation ◽  
State Resistance

Decrease in Surface States on GaAs Metal-Semiconductor Field-Effect Transistor by High Temperature Operation

1997 ◽  
Vol 36 (Part 1, No. 4A) ◽  
pp. 2068-2072 ◽  
Author(s):  
Hajime Sasaki ◽  
Kazuo Hayashi ◽  
Takashi Fujioka ◽  
Kiyoshi Mizuguchi ◽  
Byeongdeok Yea ◽  
...  
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Surface States ◽  
Effect Transistor ◽  
High Temperature Operation

Warpage Evaluation of High-Temperature Sandwich-Structured Power Module for SiC Power Semiconductor Devices

2015 ◽  
Vol 12 (3) ◽  
pp. 153-160 ◽  
Author(s):  
Takeshi Anzai ◽  
Yoshinori Murakami ◽  
Shinji Sato ◽  
Hidekazu Tanisawa ◽  
Kohei Hiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Cycle ◽  
Coefficient Of Thermal Expansion ◽  
Fabrication Process ◽  
Power Module ◽  
Ceramic Substrates ◽  
Soldering Temperature ◽  
Power Semiconductor ◽  
Power Modules ◽  
High Temperature Operation

This article presents a sandwich-structured SiC power module that can be operated at 225°C. The proposed power module has two ceramic substrates that are made of different materials (Si3N4 and Al2O3). The SiC devices are sandwiched between these ceramic substrates. The module also has a baseplate soldered onto the ceramic substrate. Conventional power modules use baseplate materials with a large coefficient of thermal expansion (CTE), for example, Cu (17–18 ppm/°C and Al (23–24 ppm/°C). In the fabrication process, the soldering temperature reaches 450°C because Au-Ge eutectic solder is used. A problem was found in the fabrication process of the module because of the high soldering temperature and CTE mismatches of the components. Furthermore, for high-temperature operation, a thermal cycle of −40°C to 250°C will be needed to ensure reliability and it is important to decrease the warpage of the module during the thermal cycle. By using stainless steel (CTE: 10 ppm/°C) for the baseplate, the warp-age measured at room temperature was reduced to one-third that of a module using a Cu baseplate. Further, the warpage displacement from 50°C to 250°C was also reduced.

Study of Baseplate Materials for High-Temperature Operation of SiC Power Modules

2018 ◽  
Vol 86 (12) ◽  
pp. 99-105
Author(s):  
Kenichi Koui ◽  
Fumiki Kato ◽  
Hidekazu Tanisawa ◽  
Shinji Sato ◽  
Yoshinori Murakami ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Modules ◽  
High Temperature Operation

Electrical Properties of GaN/Si Grown by MOCVD

2002 ◽  
Vol 743 ◽  
Author(s):  
Seikoh Yoshida ◽  
Jiang Li ◽  
Takahiro Wada ◽  
Hironari Takehara
Keyword(s):  
High Temperature ◽  
Low Cost ◽  
Electronic Devices ◽  
Si Substrate ◽  
Transmission Electron ◽  
Effect Transistor ◽  
P Type ◽  
High Temperature Operation ◽  
Gan Film ◽  
Algan Buffer

ABSTRACTGaN growth on Si substrate is very attractive for realizing low cost electronic devices. We grew a thin GaN film on p-type Si(111) substrate using AlGaN high temperature buffer without using a conventional low temperature buffer. A homogeneous buffer layer was obtained at 1093 K and a homogenous 500 nm thick GaN layer was also obtained without any crack. Using a transmission electron microscopy (TEM), we observed that the cross-section of GaN and AlGaN buffer was very smooth and also the surface of GaN was flat although the threading dislocations were observed. Furthermore, we directly fabricated a metal semiconductor field effect transistor (MESFET) using a 500 nm-thick GaN/Si without any high resistive GaN layer. A Schottky electrode was Pt/Au and an ohmic electrode was Al/Ti/Au. A Schottky breakdown voltage was over 100 V. Also, we confirmed a high temperature operation of the MESFET using a thin GaN film on Si substrate at 573 K.

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