Assembly and Packaging Enabling System Integration

2013 ◽  
Vol 2013 (1) ◽  
pp. 000171-000176 ◽  
Author(s):  
Klaus Pressel ◽  
Gottfried Beer ◽  
Maciej Wojnowski

More than Moore is a major trend to tackle the increasing difficulties of traditional Moore's law scaling. System in Package technologies, which allow heterogeneous integration, are appearing in ever more electronic applications. Furthermore we observe merging of silicon wafer technology with assembly and packaging technologies. Today a more coherent development taking into account chip, package, and the board is needed. In this paper we show how assembly and packaging can take up the slack because traditional More Moore downscaling is becoming more difficult. First, we introduce the Thin Small Leadless Package (TSLP) e.g. used in mobile systems. The TSLP is similar to the Quad Flat No-Lead (QFN) package, but thinner and with less parasitics. Second, we introduce wafer level type packages. The limits of standard wafer level packaging in respect to I/O counts pushed the development of the embedded Wafer Level Ball Grid Array (eWLB). We demonstrate the outstanding system integration capabilities of the eWLB including excellent mm-wave performance. For all the above mentioned packages chip and package technologies merge. They are door opener for nanoelectronic devices in respect to energy efficiency, mobility and security.

2021 ◽  
Author(s):  
Tc Chai ◽  
David Ho ◽  
Sc Chong ◽  
Ps Sharon Lim ◽  
Hy Hsiao ◽  
...  

2017 ◽  
Vol 2017 (S1) ◽  
pp. 1-40
Author(s):  
Subramanian S. Iyer (Subu)

Silicon features have scaled by over 1500X for over six decades, and with the adoption of innovative materials delivered better power-performance, density and till recently, cost per function, almost every generation. This has spawned a vibrant system-on-chip (SoC) approach, where progressively more function has been integrated on a single die. The integration of multiple dies on packages and boards has, however, scaled only modestly by a factor of three to five times. However, as SoCs have become bigger and more complex, the Non-Recurring Engineering (NRE) Charge and time to market have both ballooned out of control leading to ever increasing market consolidation. We need to address this problem through novel methods of system Integration. With the well-documented slowing down of scaling and the advent of the Internet of Things, there is a focus on heterogeneous integration and system-level scaling. Packaging itself is undergoing a transformation that focuses on overall system performance through integration rather than on packaging individual components. We propose ways in which this transformation can evolve to provide a significant value at the system level while providing a significantly lower barrier to entry compared with a chip-based SoC approach that is currently used. More importantly it will allow us to re-architect systems in a very significant way. This transformation is already under way with 3-D stacking of dies, Wafer level fan-out processing, and will evolve to make heterogeneous integration the backbone of a new SoC methodology, extending to integrate entire Systems on Wafers (SoWs). We will describe the technology we use and the results to-date. This has implications in redefining the memory hierarchy in conventional systems and in neuromorphic systems. We extend these concepts to flexible and biocompatible electronics.


2014 ◽  
Vol 2014 (DPC) ◽  
pp. 000815-000829 ◽  
Author(s):  
Tom Strothmann ◽  
Damien Pricolo ◽  
Seung Wook Yoon ◽  
Yaojian Lin

The demand for Wafer Level Chip Scale Packages (WLCSP) has experienced tremendous growth due to the surge in demand for advanced mobile products. The increased demand is seen for both 200mm wafers and 300mm wafers, however a significant segment of the market continues to be driven by 200mm designs. The infrastructure capacity supporting 200mm WLCSP has been stressed as a result of the mature status of 200mm technology and the rate of conversion of alternative package formats to WLCSP. This creates a dilemma for WLP service providers because adding 200mm capacity continues to require a significant amount of capital. Since 200mm volumes will most likely decline within the next 5 years, it is difficult to justify the use of capital when the depreciation term is longer than the anticipated life cycle of the product. Conventional methods of manufacturing wafer level packages require the use of equipment specifically sized to a given silicon wafer diameter although there is no technical requirement to maintain the round silicon format. The conventional method has been beneficial since it leveraged equipment and processes developed for the IC industry, however the equipment is very expensive for larger wafer diameters and the fine geometries required in advanced node IC products are not required for wafer level packaging. The problem is serious for 200mm and 300mm wafer bump lines, however the capital equipment cost for a future 450mm bumping line may well be prohibitive for wafer level packaging. A new manufacturing method has been developed to produce a wafer level package that severs the link between wafer diameter and wafer level packaging methods. The new manufacturing method is wafer size agnostic, so one manufacturing module can produce fan-in, fan-out, and 3D fan-out products regardless of the incoming wafer size. The same bill of materials, manufacturing methods and manufacturing location can produce wafer level packages from any size silicon wafer. In this method the wafer is diced prior to processing and then the die are recombined into a uniform panel size. Once recombined into a panel format, the product is processed with conventional wafer level packing techniques, including dielectric deposition, metal plating and solder ball drop. Since the manufacturing module is wafer size agnostic, there is no risk of capital for investment in the manufacturing infrastructure. A change in loading between 200mm, 300mm, and 450mm wafers does not adversely affect the utilization of the manufacturing module. The process also enables new advanced wafer level packages otherwise unattainable with conventional manufacturing methods. This presentation will describe the new manufacturing module approach and the results of process characterization for products produced in the module.


2011 ◽  
Vol 2011 (DPC) ◽  
pp. 002314-002335
Author(s):  
Akinori Shiraishi ◽  
Mitsutoshi Higashi ◽  
Kei Murayama ◽  
Yuichi Taguchi ◽  
Kenichi Mori

In recent years, downsizing of MEMS package and high accuracy MEMS device mounting have been strongly required from expanding applications that using MEMS not only for industrial and automobile but also for consumer typified mobile phone. In order to achieve that, it is appropriate to use Silicon package that can be mounted at wafer level packaging. Silicon package is made of monocrystal silicon wafer. The deep cavity is fabricated on monocrystal silicon wafer by Wet or Dry etching. And MEMS device can be mounted on the cavity. The electrical connecting between front side and back side of cavity portion is achieved by TSVs that located on the bottom of cavity. Hermetic seal can be achieved by using glass or silicon wafer bonding method. By using a driver device wafer (before dicing) as the cap for hermetic seal, smaller size and smaller number of parts module can be fabricated. In this report, methods and designs for hermetic seal with wafer level process were examined. Methods that applied were polyimide adhesive bonding, anodic bonding and Au-In solder bonding. Location of TSVs on the bottom of cavity and thickness of diaphragm with TSVs was also examined. Silicon package for piezo type gyro MEMS that designed by the result of evaluation was fabricated. This package used optimized Au-In solder bonding for hermetic seal and optimized location of TSVs for interconnection. That was designed over 50% thinner than conventional ceramic packages. Characteristics of hermetic seal were evaluated by Q factor of gyro MEMS that mounted inside of the silicon package. It is confirmed that performance of sealing are good enough for running of the MEMS.


2018 ◽  
Vol 2018 (1) ◽  
pp. 000064-000068
Author(s):  
Amir Hanna ◽  
Arsalan Alam ◽  
G. Ezhilarasu ◽  
Subramanian S. Iyer

Abstract A flexible fan-out wafer-level packaging (FOWLP) process for heterogeneous integration of high performance dies in a flexible and biocompatible elastomeric package (FlexTrateTM) was used to assemble 625 dies with co-planarity and tilt <1μm, average die-shift of 3.28 μm with σ < 2.23 μm. Fine pitch interconnects (40μm pitch) were defined using a novel corrugated topography to mitigate the buckling phenomenon of metal films deposited on elastomeric substrates. Corrugated interconnects were then used to interconnect 200 dies, and then tested for cyclic mechanical bending reliability and have shown less than 7% change in resistance after bending down to 1 mm radius for 1,000 cycles.


Author(s):  
K. Pressel ◽  
G. Beer ◽  
T. Meyer ◽  
M. Wojnowski ◽  
M. Fink ◽  
...  

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