Integrated Passive Devices and TSV, a disruptive technology for miniaturization

2013 ◽  
Vol 2013 (1) ◽  
pp. 000794-000798
Author(s):  
C. Bunel ◽  
J-R. Tenailleau ◽  
F. Voiron ◽  
S. Borel ◽  
A. Lefevre
Keyword(s):  
High Density ◽  
Harsh Environments ◽  
Disruptive Technology ◽  
Metal Insulator ◽  
High Q ◽  
Passive Devices ◽  
Technological Concepts ◽  
Metal Insulator Metal ◽  
Silicon Vias ◽  
Mim Capacitors

The 3D Silicon technology of IPDiA is a disruptive technology for miniaturization adopted by the best players in the Medical and Industrial segments for its outstanding performance and reliability demonstrated in harsh environments. The high density capacitors with multiple metal-insulator-metal (MIM) layer stacks in 3D structures reaching 250nF/mm2 already in production for several years is at the forefront of the research program where CEA-Leti and IPDiA are jointly providing innovative platforms for customers who want to combine these capacitors with Through Silicon Vias in order to demonstrate new technological concepts. The via last approach selected by IPDIA allows large possibility of integration combining TSV with active or passive devices such as High-density trench capacitors, MIM capacitors, Resistors, High-Q inductors or Zener diodes. In this paper, the interaction between TSV and IPD will be studied. Emphasis will be placed on the robustness of the 3D trench capacitor technology. Examples of applications using chip-to-chip interconnections through a passive TSV interposer in a 3D IC integration system-in-package (SiP) will be illustrated.

Ultra High Density Capacitors merged with Through Silicon Vias to enhance performances.

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 000691-000728
Author(s):  
Catherine Bunel
Keyword(s):  
High Density ◽  
Market Segments ◽  
Integration System ◽  
Design Rules ◽  
Through Silicon Vias ◽  
High Q ◽  
Passive Devices ◽  
Technological Concepts ◽  
Silicon Vias ◽  
Mim Capacitors

IPDIA presents itself as the 3D Silicon leader providing innovative platforms for customers who want to demonstrate technological concepts based on Through Silicon Vias. The market segments Medical, Lighting, and Industrial addressed by the Ipdia Technology are adopting 2.5-D and 3-D technologies to increase the performance and density of their devices through the use of silicon interposers and through-silicon vias (TSVs). The via last approach developed by IPDIA allows large possibility of integration combining TSV with active or passive devices such as High-density trench capacitors, MIM capacitors, Resistors, High-Q inductors or Zener diodes . The purpose of this paper is to focus on through-silicon via (TSV) combined with IPD , providing an interposer which could have two surfaces with devices. Emphasis is placed on 3D trench capacitor technology with an update of the roadmap .Examples of applications using chip-to-chip interconnections through a passive TSV interposer in a 3D IC integration system-in-package (SiP) are briefly presented. Some important results and recommendations are summarized: the process steps for passive devices interposer /TSV/redistribution layer (RDL)/microbumps /, the design rules .A comparison between TSV on active chips and passive interposer with TSV will be detailed.

Parylene as Thin Flexible 3-D Packaging Enabler for Biomedical Implants

2012 ◽  
Vol 2012 (1) ◽  
pp. 000176-000185
Author(s):  
Jimin Maeng ◽  
Dohyuk Ha ◽  
William J. Chappell ◽  
Pedro P. Irazoqui
Keyword(s):  
Transmission Lines ◽  
High Density ◽  
The Novel ◽  
Fully Integrated ◽  
Surface Mount ◽  
Passive Devices ◽  
Metal Insulator Metal ◽  
Small Form Factor ◽  
First Time ◽  
Sealing Layer

In this paper, the novel use of Parylene for implantable biomedical microsystems packaging is presented. Parylene is an excellent candidate material to be used for implantable and clinically usable miniature devices due to its biocompatibility, flexibility, near-hermeticity, and high-density integration capability in a small form factor. Here, we propose a novel all-Parylene packaging technique where Parylene is used as a package substrate, an isolation layer, a capacitor insulator, and a sealing layer. Fully-integrated embedded passive devices, transmission lines, and surface mount components on a thin-film multilayer Parylene substrate are described. Metal-insulator-metal capacitors are implemented on Parylene and their DC and RF properties are characterized. Further, high-density 3-D trench capacitors are developed on Parylene for the first time. By integrating embedded capacitors and antenna with surface mount diodes, a rectifier module is implemented. Wireless powering onto the Parylene package is demonstrated as a proof-of-concept for the implant package to be powered by external environment. The authors believe that the all-Parylene packaging method described here can be widely applied to other miniature implant applications.

Test of A Diamond-Tungsten Sampling Calorimeter

1994 ◽  
Vol 339 ◽  
Author(s):  
R. Stone ◽  
M. Franklin ◽  
D. Fujino ◽  
K. K. Gan ◽  
R. Gilman ◽  
...  
Keyword(s):  
Incident Energy ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Metal Structure ◽  
High Rate ◽  
Harsh Environments ◽  
Particle Detector ◽  
High Radiation ◽  
Metal Insulator ◽  
Metal Insulator Metal

ABSTRACTDiamond is suitable for use as an ionizing particle detector for high rate, high radiation, and/or chemically harsh environments. A sampling calorimeter, a detector measuring the total energy of an incident particle, consisting of 20 alternating layers of diamond and tungsten has been constructed and tested. The diamond for the detector layers was grown by chemical vapor deposition with an averaged thickness of 500 μm. The active area of each layer was 3×3 cm2 with ohmic contacts on opposite faces forming a metal-insulator-metal structure. The calorimeter was tested with electrons of energies up to 5.0 GeV. The response of the diamond/tungsten calorimeter was found to be linear as a function of incident energy. A direct comparison of diamond/tungsten and silicon/tungsten calorimeters was made.

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

Resistive Switching Behavior and Electrical Properties of TiO2:Ho2O3 and HoTiOx Based MIM Capacitors

2014 ◽  
Vol 1691 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
E. Pérez ◽  
L. A. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Resistive Switching ◽  
Treatment Effects ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTHo2O3-TiO2 based metal-insulator-metal capacitors were grown by ALD, using Ho(thd)3, Ti(OCH(CH3)2)4 and ozone as precursors. The thicknesses of the films were in the range of 7.7 to 25 nm. Some of the films were post-deposited annealed in order to study the treatment effects. The capacitors were electrically characterized. Leakage current decreases as the amount of holmium increased in the films. Resistive switching behavior was obtained in the samples where the leakage current was low. This effect was also observed in Ho2O3 films, where no titanium was present in the films.

Sign in / Sign up

Export Citation Format

Share Document