Tunable High-Q TSV Inductor Packaging with MEMS
2015 ◽
Vol 2015
(1)
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pp. 000062-000066
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Keyword(s):
High Q
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In this paper, we present a Through-Silicon-Via (TSV)-based 3D tunable inductor implementation for RF applications. The proposed inductor structure uses MEMS (Micro Electro-Mechanical Systems) switches to vary inductance by activating and deactivating the switches. MEMS-based switches are used to offer high isolation in the off state. The tunable inductor is tested within an LNA circuit for variation in off-state leakage resistance. Detailed 3D full wave simulation results are presented for different cellular frequency bands.
2014 ◽
Vol 6
(6)
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pp. 611-618
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2013 ◽
Vol 2013
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pp. 1-6
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Keyword(s):
2015 ◽
Vol 2015
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pp. 1-7
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Keyword(s):
2012 ◽
Vol 2012
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pp. 1-6
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Keyword(s):
2016 ◽
Vol 9
(2)
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pp. 269-274
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2015 ◽
Vol 8
(11)
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