Thermal and Electrical Characterizations of Ultra-Thin Flexible 3YSZ Ceramic for Electronic Packaging Applications

2016 ◽  
Vol 2016 (1) ◽  
pp. 000391-000396 ◽  
Author(s):  
Xin Zhao ◽  
K. Jagannadham ◽  
Wuttichai Reainthippayasakul ◽  
Michael. T. Lanagan ◽  
Douglas C. Hopkins
Keyword(s):  
Thermal Conductivity ◽  
Electronic Packaging ◽  
Relative Permittivity ◽  
Room Temperature ◽  
Dielectric Breakdown ◽  
Ceramic Substrate ◽  
Zirconia Ceramic ◽  
X Ray ◽  
Power Modules ◽  
Electrical Characterizations

Abstract This paper presents thermal and electrical characterizations of an ultra-thin flexible 3YSZ (3 mol% Yttria Stabilized Zirconia) ceramic substrate to explore its potential for electronic packaging applications. The thicknesses of the ultra-thin 3YSZ substrates were 20 μm and 40 μm. The flexible thin ceramic substrate can provide not only better modulus for higher robustness in manufacturing, especially in Z-axis direction of modules, but also low thermal resistance for high density 2D (two dimensional) / 3D (three dimensional) power module packaging applications. To better understand the thermal and electrical properties of the ultra-thin flexible ceramic, different measurements were employed. Thermal conductivity was measured at different temperatures by 3-omega method, the results were verified by thermo-reflectance measurement at room temperature. Relative permittivity was measured from 100 Hz to 10 MHz, with dielectric losses determined by dielectric spectroscopy. The dielectric breakdown of the ultra-thin flexible 3YSZ was measured, from room temperature to 150 °C. Weibull analysis was performed on 20 measurements for each temperature. The test results showed that the thermal conductivity of 3YSZ decreased from 3.3 W/mK at 235 K to 2.2 W/Mk at 600 K. The relative permittivity decreased from 30.9 to 27.3 for higher frequencies for both substrates with different thickness. The temperature-dependence of relative permittivity and dielectric loss was studied. The results showed that these two parameters increased slowly from −65 °C to 150 °C, but more repidly from 175 °C to 250 °C. The dielectric breakdown decreased at higher temperature, from 5.76 kV to 2.64 kV for thickness of 20 μm, 7.84 kV to 3.36 kV for thickness of 40 μm. SEM (Scanning Electron Microscopy), EDS (Energy-dispersive X-ray Spectroscopy) and XRD (X-ray Powder Diffraction) analysis was performed to compare the microstructure of 3YSZ ultra-thin substrate and that of AlN (Aluminum Nitride) substrate. The microstructure of 3YSZ consisted of smaller round particles and that of AlN contained larger columnar particles. FEA (Finite Element Analysis) simulations were also applied to demonstrate the thermal properties of 3YSZ in simplified model of power modules. Though the measurement results showed that it did not meet expectations for high temperature power modules, the present work showed potential applications of the ultra-thin 3YSZ substrates in low voltage power modules, LED modules.

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1631-1636 ◽  
Author(s):  
Boya Cui ◽  
D. Bruce Buchholz ◽  
Li Zeng ◽  
Michael Bedzyk ◽  
Robert P. H. Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Room Temperature ◽  
Storage Time ◽  
Laser Deposition ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
3Ω Method ◽  
X Ray

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

Thermal And Electronic Properties Of An AICoFeCr Approximant Of The Decagonal Phase

1998 ◽  
Vol 553 ◽  
Author(s):  
P. Archambault ◽  
P. Plaindoux ◽  
E Belin-Ferre ◽  
J. M. Dubois
Keyword(s):  
Thermal Conductivity ◽  
Emission Spectroscopy ◽  
Room Temperature ◽  
Nominal Composition ◽  
Metallic Substrates ◽  
X Ray ◽  
Decagonal Phase ◽  
Thermal Barriers ◽  
Localization Scheme ◽  
Dependence Versus

AbstractWe have studied the dependence versus nominal composition and temperature of the thermal conductivity in the AlCoFeCr system close to the region where an approximant of the decagonal phase forms. This compound of the Al5Co2 type shows a melting temperature above 1100°C and is of interest because it dispays low thermal conductivity whereas its expansion coefficient is comparable to those of metallic substrates. Used as a coating, it is of potential value for the sake of producing thermal barriers. From a study of the occupied band by X-ray emission spectroscopy, we show that its poor thermal conductivity above room temperature fits with the recurrent localization scheme of electronic states.

Study of Electrical and Aging Properties on the La-Doped Aurivillius Phase Ferroelectrics BaBi4Ti4O15

2013 ◽  
Vol 319 ◽  
pp. 9-13
Author(s):  
Bai Wei Yu ◽  
Qian Qian Zheng ◽  
Li Jing Pan ◽  
Dong Hua Zhang ◽  
Yan Xue Tang ◽  
...  
Keyword(s):  
Relative Permittivity ◽  
Marked Improvement ◽  
Room Temperature ◽  
Solid Phase ◽  
X Ray Diffraction ◽  
Aurivillius Phase ◽  
X Ray ◽  
Aging Properties ◽  
T Phase ◽  
La Doped

Aurivillius phase ferroelectrics Ba(Bi1−xLax)4Ti4O15(x=0-0.05) (BBiLxT) was synthesized by a modified high-temperature solid-phase route.The structure, the dielectric, the ferroelectric and the aging properties were investigated systematically. With the La3+doping, the room temperature relative permittivity of the samples is increased, and dielectric loss is decreased. For the BBiLxT phase, only a weak variation with respect to the F2mm space group can be suggested from single crystal X-ray diffraction. The microstructure confirms the samples have a well-proportioned grain size and a higher density. The substitution also results in a marked improvement in the remnant polarization. The doping of La3+in BBiLxT ceramics increased the room temperature relative permittivity aging properties.

Growth of halide perovskites thin films for thermoelectric applications

MRS Advances ◽  
2019 ◽  
Vol 4 (30) ◽  
pp. 1719-1725 ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Cost Effective ◽  
Thermoelectric Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Halide Perovskites

ABSTRACTThermoelectric materials can play an important role to develop a sustainable energy source for internet of things devices near room temperature. In this direction, it is important to have a thermoelectric material with high thermoelectric performance. Cesium tin triiodide (CsSnI3) single crystal perovskite has shown high value of Seebeck coefficient and ultra low thermal conductivity which are necessary conditions for high thermoelectric performance. Here, we report the thermoelectric response of CsSnI3 thin films. These films are prepared by cost effective wet spin coating process at different baking temperature. Films were characterized using X-ray diffraction and scanning electron microscopy. In our case, films baked at 130°C for 5 min have shown the best thermoelectric performance at room temperature with: Seebeck coefficient 115 μV/K and electrical conductivity 124 S/cm, thermal conductivity 0.36 W/m·K and figure of merit ZT of 0.137.

Effects of Black Scoria on Mechanical Properties and Thermal Insulation Properties of Building Materials

2021 ◽  
Vol 1047 ◽  
pp. 151-157
Author(s):  
Shoroog Alraddadi
Keyword(s):  
Mechanical Properties ◽  
Thermal Conductivity ◽  
Compressive Strength ◽  
Room Temperature ◽  
Building Materials ◽  
Heat Insulation ◽  
Cement Composites ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Good Heat

The effect of fine black scoria on the mechanical properties and thermal conductivity of building materials was investigated in this study. Black scoria was used to replace cement in concrete with various percentages. Four concrete samples containing 0%, 10%, 20%, and 30% black scoria were prepared. Characterization black scoria was performed via X-ray powder diffraction, X-ray fluorescence, scanning electron microscopy, thermogravimetric analysis, and differential scanning calorimetry analysis. Then, the compressive strength of the samples was investigated after 14, 21, 28, and 91 days of curing at room temperature. Finally, the thermal conductivities of the samples were measured after 28 days. Based on the experimental results, the highest compressive strength among the samples was 45.3 MPa, obtained from the mixture containing 10% black scoria after 91 days of curing. It was also observed that the average thermal conductivity of the concrete samples decreased with an increase in the fine black scoria content from 1.8 to 0.193 W m−1 K−1. Thus, black scoria is an appropriate substitute for commercial admixtures in cement composites in thermally insulating building materials due to its low density, excellent compressive strength, and good heat insulation properties.

Structure and Thermal Conductivity of Nanostructured Hafnia-Based Thermal Barrier Coating Grown on SS-403

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
M. Noor-A-Alam ◽  
A. R. Choudhuri ◽  
C. V. Ramana
Keyword(s):  
Thermal Conductivity ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Thermal Barrier ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Eds Analysis ◽  
Barrier Coating

Yttria-stabilized hafnia (YSH) coatings were grown onto stainless steel 403 (SS-403) and Si substrates. The deposition was made at various growth temperatures ranging from room temperature (RT) to 500 °C. The microstructure and thermal properties of the YSH coatings were evaluated employing grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDS), and photoacoustic measurements. GIXRD studies indicate that the coatings crystalize in cubic structure with a (111) texturing. Well-grown triangular dense morphology was evident in SEM data. EDS analysis indicates the composition stability of YSH coatings. The grain size increases with the increasing growth temperature. Thermal conductivity measurements indicate lower thermal conductivity of YSH coatings compared to either pure hafnia or yttria-stabilized zirconia.

Effects of the Addition of Rhenium on the Thermoelectric Properties of the AlPdMn Quasicrystalline System

2000 ◽  
Vol 626 ◽  
Author(s):  
A. L. Pope ◽  
R. Gagnon ◽  
R. Schneidmiller ◽  
P. N. Alboni ◽  
R. T. Littleton ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Transport Property ◽  
Periodic Structure ◽  
Thermoelectric Properties ◽  
Electrical Transport ◽  
Room Temperature ◽  
Phonon Scattering ◽  
X Ray ◽  
Low Thermal Conductivity

ABSTRACTPartially due to their lack of periodic structure, quasicrystals have inherently low thermal conductivity on the order of 1 - 3 W/m-K. AlPdMn quasicrystals exhibit favorable room temperature values of electrical conductivity, 500–800 (Ω-cm)-1, and thermopower, 80 μV/K, with respect to thermoelectric applications. In an effort to further increase the thermopower and hopefully minimize the thermal conductivity via phonon scattering, quartenary Al71Pd21Mn8-XReX quasicrystals were grown. X-ray data confirms that the addition of a fourth element does not alter the quasiperiodicity of the sample. Al71Pd21Mn8-XReX quasicrystals of varying Re concentration were synthesized where x had values of 0, 0.08, 0.25, 0.4, 0.8, 2, 5, 6, and 8. Both thermal and electrical transport property measurements have been performed and are reported.

Unileg Thermoelectric Module Comprised by Coated Halide-Perovskite Thin Film

2020 ◽  
Vol 142 (7) ◽  
Author(s):  
Shrikant Saini ◽  
Ajay Kumar Baranwal ◽  
Tomohide Yabuki ◽  
Shuzi Hayase ◽  
Koji Miyazaki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Room Temperature ◽  
Maximum Output Power ◽  
Thermoelectric Module ◽  
Direct Conversion ◽  
Maximum Output ◽  
X Ray Diffraction ◽  
X Ray

Abstract The direct conversion of thermal energy into electricity is possible by thermoelectric effect. CsSnI3 perovskite has shown a way with its intrinsic ultralow thermal conductivity and large Seebeck coefficient. In this work, CsSnI3 thin films were optimized. Thin films were structurally and chemically characterized using X-ray diffraction (XRD) and scanning electron microscope (SEM). Thermoelectric properties such as electrical conductivity, Seebeck coefficient, and thermal conductivity were measured near room temperature (300 K). CsSnI3 thin films unileg thermoelectric modules were fabricated on a glass substrate. The maximum output power is obtained about 0.8 nW for five legs (25 mm × 3 mm × 600 nm) modules for the temperature difference of about 5 °C.

Magnetic Properties and High Thermal Conductivity of Al2O3 Ceramics Prepared by Spark Plasma Sintering

2013 ◽  
Vol 750-752 ◽  
pp. 512-516 ◽  
Author(s):  
Zhen Hua Jia ◽  
Xin Gui Tang ◽  
Donge Chen ◽  
Jun Bo Wu ◽  
Qiu Xiang Liu
Keyword(s):  
Thermal Conductivity ◽  
Magnetic Properties ◽  
Spark Plasma Sintering ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
High Thermal Conductivity ◽  
X Ray ◽  
Plasma Sintering ◽  
Average Grain Size ◽  
Spark Plasma

The Al2O3 ceramics with high thermal conductivity prepared the spark plasma sintering (SPS) technology. The structure, image and magnetic properties of the SPS Al2O3 ceramics was characterized by X-ray, field emission scanning electron microscope (FE-SEM) and the vibrating sample magnetometer (VSM) at room temperature. The results shown that the average grain size of the Al2O3 ceramics is about 5~15μm, the thermal conductivity of Al2O3 ceramics up to 24.928 W/(m·K), and the remanent magnetization as higher as 0.00546emu/g and the saturation magnetization as higher as 0.0321 emu/g, respectively. The room-temperature ferromagnetism, which is different from the traditional, possibly originates from the oxygen vacancies.

Microstructure and thermoelectric properties of CuInSe2/In2Se3 compound

2018 ◽  
Vol 32 (03) ◽  
pp. 1850018 ◽  
Author(s):  
Kang Wang ◽  
Jing Feng ◽  
Zhen-Hua Ge ◽  
Peng Qin ◽  
Jie Yu
Keyword(s):  
Electron Microscopy ◽  
Thermal Conductivity ◽  
Room Temperature ◽  
Solvothermal Method ◽  
Chalcopyrite Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Scanning Electron

CuInSe2 powders were synthesized by solvothermal method, and then the CuInSe2/In2Se3 bulk samples were fabricated by spark plasma sintering (SPS) technique. To investigate the phase composition, the powders were determined by X-ray diffraction (XRD). The microstructures of the powders and bulk samples were observed by scanning electron microscopy (SEM). The transportation of the electronic properties and thermal conductivity were measured at room temperature to 700 K. According to the results, the CuInSe2 powders appeared in flower-like patterns which ranged from 3 [Formula: see text]m to 6 [Formula: see text]m. CuInSe2 powders were synthesized at 180[Formula: see text]C with a chalcopyrite structure. The Seebeck coefficient increased significantly in composite thermoelectric materials up to [Formula: see text] at 623 K. The thermal conductivity of the sample significantly decreases from the room temperature to 700 K. The CuInSe2 bulk composite by solvothermal method achieves the highest ZT value of 0.187 at 700 K.

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