A 120 GHz Voltage Controlled Oscillator Integrated with 1/128 Frequency Divider Chain in 65 nm CMOS Technology

2014 ◽  
Vol 14 (1) ◽  
pp. 131-137 ◽  
Author(s):  
Namhyung Kim ◽  
Jongwon Yun ◽  
Jae-Sung Rieh
Keyword(s):  
Cmos Technology ◽  
Frequency Divider ◽  
Voltage Controlled Oscillator

scholarly journals On the VCO/Frequency Divider Interface in Cryogenic CMOS PLL for Quantum Computing Applications

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2404
Author(s):  
Gabriele Gira ◽  
Elena Ferraro ◽  
Mattia Borgarino
Keyword(s):  
Quantum Algorithms ◽  
Cmos Technology ◽  
Design Guidelines ◽  
Frequency Divider ◽  
Physical Models ◽  
Phase Locked Loops ◽  
Voltage Controlled Oscillator ◽  
Cryogenic Temperatures ◽  
Active Devices ◽  
Interesting Approach

The availability of quantum microprocessors is mandatory, to efficiently run those quantum algorithms promising a radical leap forward in computation capability. Silicon-based nanostructured qubits appear today as a very interesting approach, because of their higher information density, longer coherence times, fast operation gates, and compatibility with the actual CMOS technology. In particular, thanks to their phase noise properties, the actual CMOS RFIC Phase-Locked Loops (PLL) and Phase-Locked Oscillators (PLO) are interesting circuits to synthesize control signals for spintronic qubits. In a quantum microprocessor, these circuits should operate close to the qubits, that is, at cryogenic temperatures. The lack of commercial cryogenic Design Kits (DK) may make the interface between the Voltage Controlled Oscillator (VCO) and the Frequency Divider (FD) a serious issue. Nevertheless, currently this issue has not been systematically addressed in the literature. The aim of the present paper is to investigate the VCO/FD interface when the temperature drops from room to cryogenic. To this purpose, physical models of electronics passive/active devices and equivalent circuits of VCO and the FD were developed at room and cryogenic temperatures. The modeling activity has led to design guidelines for the VCO/FD interface, useful in the absence of cryogenic DKs.

scholarly journals An 18.8–33.9 GHz, 2.26 mW Current-Reuse Injection-Locked Frequency Divider for Radar Sensor Applications

Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2551
Author(s):  
Kwang-Il Oh ◽  
Goo-Han Ko ◽  
Jeong-Geun Kim ◽  
Donghyun Baek
Keyword(s):  
Supply Voltage ◽  
Cmos Technology ◽  
Frequency Divider ◽  
Oxide Semiconductor ◽  
Center Frequency ◽  
Radar Sensor ◽  
Frequency Locking ◽  
Current Reuse ◽  
Sensor Applications ◽  
Locking Range

An 18.8–33.9 GHz, 2.26 mW current-reuse (CR) injection-locked frequency divider (ILFD) for radar sensor applications is presented in this paper. A fourth-order resonator is designed using a transformer with a distributed inductor for wideband operating of the ILFD. The CR core is employed to reduce the power consumption compared to conventional cross-coupled pair ILFDs. The targeted input center frequency is 24 GHz for radar application. The self-oscillated frequency of the proposed CR-ILFD is 14.08 GHz. The input frequency locking range is from 18.8 to 33.8 GHz (57%) at an injection power of 0 dBm without a capacitor bank or varactors. The proposed CR-ILFD consumes 2.26 mW of power from a 1 V supply voltage. The entire die size is 0.75 mm × 0.45 mm. This CR-ILFD is implemented in a 65 nm complementary metal-oxide semiconductor (CMOS) technology.

Design of 25-Gb/s Half-Rate Clock and Data Recovery Circuit for Optical Communication

2013 ◽  
Vol 385-386 ◽  
pp. 1278-1281 ◽  
Author(s):  
Zheng Fei Hu ◽  
Ying Mei Chen ◽  
Shao Jia Xue
Keyword(s):  
Optical Communication ◽  
Input Data ◽  
Clock And Data Recovery ◽  
Cmos Technology ◽  
Data Recovery ◽  
Phase Detector ◽  
Voltage Controlled Oscillator ◽  
Output Data ◽  
Data Phase ◽  
Simulation Results

A 25-Gb/s clock and data recovery (CDR) circuit with 1:2 demultiplexer which incorporates a quadrature LC voltage-controlled-oscillator and a half-rate bang-bang phase detector is presented in this paper. A quadrature LC VCO is presented to generate the four-phase output clocks. A half-rate phase detector including four flip-flops samples the 25-Gb/s input data every 20 ps and alignes the data phase. The 25-Gb/s data are retimed and demultiplexed into two 12.5-Gb/s output data. The CDR is designed in TSMC 65nm CMOS Technology. Simulation results show that the recovered clock exhibits a peak-to-peak jitter of 0.524ps and the recovered data exhibits a peak-to-peak jitter of 1.2ps. The CDR circuit consumes 121 mW from a 1.2 V supply.

scholarly journals A Low-Power Opamp-Less Second-Order Delta-Sigma Modulator for Bioelectrical Signals in 0.18 µm CMOS

Sensors ◽  
2021 ◽  
Vol 21 (19) ◽  
pp. 6456
Author(s):  
Fernando Cardes ◽  
Nikhita Baladari ◽  
Jihyun Lee ◽  
Andreas Hierlemann
Keyword(s):  
Low Power ◽  
Low Frequency ◽  
Cmos Technology ◽  
Low Noise ◽  
Second Order ◽  
Frequency Noise ◽  
Voltage Controlled Oscillator ◽  
Noise Shaping ◽  
Delta Sigma Modulator ◽  
Delta Sigma

This article reports on a compact and low-power CMOS readout circuit for bioelectrical signals based on a second-order delta-sigma modulator. The converter uses a voltage-controlled, oscillator-based quantizer, achieving second-order noise shaping with a single opamp-less integrator and minimal analog circuitry. A prototype has been implemented using 0.18 μm CMOS technology and includes two different variants of the same modulator topology. The main modulator has been optimized for low-noise, neural-action-potential detection in the 300 Hz–6 kHz band, with an input-referred noise of 5.0 μVrms, and occupies an area of 0.0045 mm2. An alternative configuration features a larger input stage to reduce low-frequency noise, achieving 8.7 μVrms in the 1 Hz–10 kHz band, and occupies an area of 0.006 mm2. The modulator is powered at 1.8 V with an estimated power consumption of 3.5 μW.

scholarly journals IMPLEMENTATION BASED ON 0.18 µM CMOS TECHNIQUES FOR DIGITAL PLL SYNTHESIZER IN LOW LOCKING TIME

2020 ◽  
Vol 9 (9) ◽  
pp. 91-98
Keyword(s):  
High Speed ◽  
Switch Cost ◽  
Energy Systems ◽  
Cmos Technology ◽  
Voltage Controlled Oscillator ◽  
Laptop Computer ◽  
Purification Technique ◽  
General Object ◽  
Published Research ◽  
Diamond Ring

Synthesizer suggests the chief feature element of clocking around modern-day high-speed energy systems. Every time appreciated seeing that for a phase-locked land (PLL), numbers synthesizers illustrate fantastic precision and even now let general object rendering linked with programmable numbers switching. While doing this dissertation lots of people deliver a certainly better model linked with Steadiness synthesizer coupled with focused on ugly Steadiness synthesizers implementing An electronic digital PLL. A persons vision might be globally placing and also specifications because of the straightforward varieties in the An electronic digital PLL: phase-frequency system, bill tubing, land purification technique, present-day dictated oscillator (VCO) coupled with programmable divider. This particular emulator achievement in the An electronic digital PLL implementing perhaps the most common 0.18µd CMOS technology around Piquance illustrate a fast wrapping up effort frame tremendous numbers range. This particular acquire length of time could be tailored via altering ones own bill tubing latest also,the land purification technique capacitor. PFD (Phase Steadiness Detector) marketplace forestalling deviation in the bill tubing marketplace under the founded problem might be designed. That comprehension of the LPF needs the published research within the land individual in the PLL. Encapsulating the perfect tradeoffs for illustration acquire alter, acquire an important portions of knowledge switch cost, this will likely often be simply just ones own tricky obstruct so that you can design. To acquire wider production numbers concentrating on alter, bigger capacitance is vital (i.e., great area). Which will boost the occasionally keeps going free of boost laptop computer food put usage, The project acknowledges some form of voltage-controlled oscillator (VCO) implementing a diamond ring diamond ring linked with single-ended current-starved oscillator can present tremendous jogging frequencies.

19.1 GHz 18 mW divide‐by‐3 heterodyne injection locking frequency divider in 0.18 µm CMOS technology

2016 ◽  
Vol 52 (12) ◽  
pp. 1076-1078 ◽  
Author(s):  
Jian‐Hua Huang ◽  
Xiao‐Peng Yu ◽  
Shi‐Yi Xu ◽  
Jing Jin ◽  
Fa‐Xin Yu
Keyword(s):  
Cmos Technology ◽  
Injection Locking ◽  
Frequency Divider

A 2.3 mW Multi-Frequency Clock Generator with −137 dBc/Hz Phase Noise VCO in 180 nm Digital CMOS Technology

2019 ◽  
Vol 29 (08) ◽  
pp. 2050130 ◽  
Author(s):  
Jagdeep Kaur Sahani ◽  
Anil Singh ◽  
Alpana Agarwal
Keyword(s):  
Phase Noise ◽  
Supply Voltage ◽  
Dead Zone ◽  
Dynamic Logic ◽  
Cmos Technology ◽  
Control Voltage ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Cmos Inverter ◽  
Digital Cmos

A fast phase frequency detector (PFD) and low gain low phase noise voltage-controlled oscillator (VCO)-based phase-locked loop (PLL) design are presented in this paper. PLL works in the frequency range of 0.025–1.6[Formula: see text]GHz, targeting various SoC applications. The proposed PFD, designed using CMOS dynamic logic, is fast and improves the locking time, dead zone and blind zone in the PLL. The standard CMOS inverter gate-based pseudo differential VCO is used in the PLL. Also, CMOS inverter is used as variable capacitor to tune the frequency of VCO with control voltage. The proposed PLL is designed in a 180[Formula: see text]nm CMOS process with supply voltage of 1.8[Formula: see text]V. The phase noise of VCO is [Formula: see text][Formula: see text]dBc/Hz at an offset frequency of 100[Formula: see text]MHz. The reference clock of 25[Formula: see text]MHz synthesizes the output clock of 1.6[Formula: see text]GHz with rms jitter of 0.642[Formula: see text]ps.

Sign in / Sign up

Export Citation Format

Share Document