scholarly journals Electroless deposition of nickel boron coatings using morpholine borane as a reducing agent

Chemija ◽  
2020 ◽  
Vol 31 (1) ◽  
Author(s):  
Zita Sukackienė ◽  
Kornelija Antanavičiūtė ◽  
Jūratė Vaičiūnienė ◽  
Loreta Tamašauskaitė-Tamašiūnaitė ◽  
Arnas Naujokaitis ◽  
...  

Nickel boron (NiB) coatings were deposited onto copper using a nickelglycine (Ni-Gly) plating solution and morpholine borane (MB) as a reducing agent. It has been determined that using MB as a reducing agent in the Ni-Gly plating solution produces NiB coatings, which exhibit typical cauliflower-like textures. The deposition rate of the NiB coatings and their composition depend on the concentrations of the reducing agent (MB) and the ligand (Gly), in addition to the pH and temperature of the plating solution. The highest deposition rate (3.42 mg cm–2 h–1) of the NiB coating was obtained when the plating bath was operated at pH 5 and 60°C temperature. Using this method, NiB coatings containing 10–20 at.% of boron can be obtained.

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1893
Author(s):  
Loreta Tamasauskaite-Tamasiunaite ◽  
Yezdi Dordi ◽  
Eugenijus Norkus ◽  
Ina Stankeviciene ◽  
Aldona Jagminiene ◽  
...  

In the present work, the kinetics of electroless deposition of Pt, using a cobalt ion redox system (Co3+/Co2+) as a reducing agent, has been investigated. The deposition rate of Pt depends on the pH, concentration of reactants, and temperature. The deaeration and bubbling of the plating solution with argon play an essential role. It was found that 0.11 mg cm−2 of Pt films could be deposited on the surface of a roughed glass sheet in one hour without replenishing the solution. Additional data have been obtained on the grounds of electrochemical quartz crystal microbalance experiments. The bubbling (agitation) of the electroless Pt plating solution with argon during the deposition of Pt results in a higher deposition rate and is ca. 3 µg cm−2 min−1. The Pt deposition rate is far less, and is as low as 0.14 µg cm−2 min−1 when the electroless Pt plating solution is not bubbled with argon during the deposition of Pt.


RSC Advances ◽  
2021 ◽  
Vol 11 (62) ◽  
pp. 39153-39168
Author(s):  
Bo Wu ◽  
Baizhao Tan ◽  
Guizhen Tan ◽  
Ming Zeng ◽  
Jinyi Luo ◽  
...  

In the Au(iii)–DMH based cyanide-free electroless gold plating bath, the added hypophosphite inhibited the black pad and improved the corrosion resistance of the Cu/Ni–P/Au coating.


2002 ◽  
Vol 737 ◽  
Author(s):  
Lon A. Porter ◽  
Hee Cheul Choi ◽  
Alexander E. Ribbe ◽  
Jillian M. Buriak

ABSTRACTPrecious metals are choice materials for a myriad of applications due their high electrical conductivity, resistance to corrosion, and ligand binding specificity. Indispensable in modern electronics fabrication, precious metals also enjoy widespread use as catalysts, support substrates, and sensor elements. Recent progress towards metallization on diminishing size regimes has imposed increasingly stringent demands upon thin film preparation methodologies. Metallization techniques employed in ultra large scale integration (ULSI) device fabrication, nanoelectromechanical systems (NEMS), and arrayed nanosensors will require unparalleled control of surface morphology, deposition rate, and substrate adhesion without sacrificing throughput or cost effectiveness. Furthermore, precious metal films of this type are essential for fundamental investigations aimed at elucidating the intricate nature of interfacial topics ranging from self-assembled monolayers (SAMs) to heterogeneous catalysis. In contrast to complex and expensive vacuum methods of metallization, research in our laboratory has focused on the preparation of precious metal thin films on semiconductor substrates via electroless deposition. Thin and thick films of gold, platinum, and palladium nanoparticles have been prepared as a result of the immersion of germanium and gallium arsenide substrates into dilute, aqueous solutions of tetrachloraurate (III), tetrachloroplatinate (II), and tetrachloropalladate (II), respectively. This methodology yields nanostructured precious metal films with control over surface morphology and deposition rate. Moreover, metal films prepared in this manner exhibit excellent adhesion to the underlying semiconductor substrate. The resultant films were characterized utilizing scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and scanning probe microscopy (SPM). This method provides for the facile interfacing of metal nanostructures with group (IV) and III-IV compound semiconductor surfaces.


2008 ◽  
Vol 8 (7) ◽  
pp. 3416-3421
Author(s):  
K. Valenzuela ◽  
S. Raghavan ◽  
P. A. Deymier ◽  
J. Hoying

Microtubules (MTs) are self-assembling, protein-based, tubular structures several micrometers long with outer and inner diameters of 25 nm and 15 nm, respectively. This aspect ratio makes MTs ideal templates for producing nanowires for applications such as electrical nano-interconnects. MTs are poorly conductive and their use as interconnects necessitates their metallization. We report a process for metallization of MTs with copper using a biologically benign electroless deposition chemistry consisting of copper sulfate solution containing acetic acid as a complexant and ascorbic acid as reducing agent. The pH of the plating bath is controlled such that copper metallization occurs without disassembling the MTs. Electron microscopic characterization of the morphology and dimensions of the copper nanowires shows that metallization for approximately 1 minute produces a uniform nanowire with an average diameter of approximately 15 nm, suggesting that metallization is initiated selectively from the MT inner core.


2015 ◽  
Vol 151 ◽  
pp. 249-255 ◽  
Author(s):  
Kwang Hwan Kim ◽  
Taeho Lim ◽  
Kyung Ju Park ◽  
Hyo-Chol Koo ◽  
Myung Jun Kim ◽  
...  

2007 ◽  
Vol 359-360 ◽  
pp. 68-72
Author(s):  
Bing Suo Pan ◽  
Yang Yang

To increase the manufacture efficiency of electroplated diamond tools, a nickel plating solution containing ammonium sulphate and sodium formate was investigated. The effects of concentration of ammonium sulphate, sodium formate and pH value on throwing power, covering power, ability to resist Cu2+ contamination and deposit microhardness were studied. Surface topography of deposits was also observed by SEM. Compared to watts bath, the plating solution studied is advantageous in terms of the performance of plating solution, deposit hardness and diamond bit behavior. Ammonium sulphate can refine deposit crystal grains and result in crystal form change.


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