High Spatial and Energy Resolution Fault Isolation by Electron Beam Probing for Advanced Technology Nodes

2020 ◽  
Author(s):  
Jennifer J. Huening ◽  
Prasoon Joshi ◽  
Hyuk Ju Ryu ◽  
Wen-hsien Chuang ◽  
Di Xu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Energy Resolution ◽  
Fault Isolation ◽  
Advanced Technology ◽  
Semiconductor Technology ◽  
Current Technology ◽  
Logic State ◽  
Voltage Contrast ◽  
Lock In ◽  
Technology Nodes

Abstract On older semiconductor technology, electron-beam probing (EBP) for active voltage contrast and waveform on frontside metal lines was widely utilized. EBP is also being extended to include the well-known optical techniques such as signal mapping imaging (SMI) with the use of a lock-in amplifier in the signal chain and e-beam device perturbation. This paper highlights some of the achievements from an Intel in-house built e-beam tool on current technology nodes. The discussion covers the demonstration of fin and contact resolution on the current technology nodes by EBP and the analysis of the SRAM array with EBP and EBP of metal lines. By utilizing EBP, it has been demonstrated that logic state imaging, SMI, and waveform have significantly improved spatial resolution compared to the current optical fault isolation analogues.

Use of Second Harmonic and Thermal Effects of Laser Voltage Probing for Better Fault Isolation

2016 ◽  
Author(s):  
Ramya Yeluri ◽  
Ravishankar Thirugnanasambandam ◽  
Cameron Wagner ◽  
Jonathan Urtecho ◽  
Jan M. Neirynck
Keyword(s):  
Duty Cycle ◽  
Thermal Effects ◽  
Second Harmonic ◽  
Fault Isolation ◽  
Advanced Technology ◽  
Temperature Dependent ◽  
First Case ◽  
Improve Accuracy ◽  
Degradation Monitoring ◽  
Technology Nodes

Abstract Laser voltage probing (LVP) has been extensively used for fault isolation over the last decade; however fault isolation in practice primarily relies on good-to-bad comparisons. In the case of complex logic failures at advanced technology nodes, understanding the components of the measured data can improve accuracy and speed of fault isolation. This work demonstrates the use of second harmonic and thermal effects of LVP to improve fault isolation with specific examples. In the first case, second harmonic frequency is used to identify duty cycle degradation. Monitoring the relative amplitude of the second harmonic helps identify minute deviations in the duty cycle with a scan over a region, as opposed to collecting multiple high resolution waveforms at each node. This can be used to identify timing degradation such as signal slope variation as well. In the second example, identifying abnormal data at the failing device as temperature dependent effect helps refine the fault isolation further.

Electron beam metrology for advanced technology nodes

2019 ◽  
Vol 58 (SD) ◽  
pp. SD0801 ◽  
Author(s):  
Gian Francesco Lorusso ◽  
Naoto Horiguchi ◽  
Jürgen Bömmels ◽  
Christopher J. Wilson ◽  
Geert Van den bosch ◽  
...  
Keyword(s):  
Electron Beam ◽  
Advanced Technology ◽  
Technology Nodes

Conductive-AFM for Inline Voltage Contrast Defect Characterization at Advanced Technology Nodes

2018 ◽  
Author(s):  
Chuan Zhang ◽  
Jochonia Nxumalo ◽  
Esther P.Y. Chen
Keyword(s):  
Early Stage ◽  
Contact Layer ◽  
Advanced Technology ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Critical Yield ◽  
Voltage Contrast ◽  
Technology Nodes

Abstract Voltage contrast (VC) mode inline E-beam inspection (EBI) at post contact layer provides electrical readout of critical yield signals at an early stage, which could be months before a wafer reaches functional test. Similar to the passive voltage contrast (PVC) technique that is widely used in failure analysis labs, inline VC scanning is based on scanning electron microscopy, where a low keV electron beam scans across the wafer. Conductive atomic force microscopy (CAFM) was successfully implemented as a characterization method for inline VC defects. In this paper, three challenging VC defect analysis case studies are considered: bright voltage contrast (BVC) gate to active short, BVC Junction leakage, and Dark Voltage Contrast gate contact open. Defects exhibiting a hard electrical short, junctional leakage, and open gate contact are used to illustrate how CAFM provides a powerful and comprehensive solution for in-depth characterization of the inline VC defects.

Invisible Defect Root Cause Identification with Electrical and Chemical Analyses

2015 ◽  
Author(s):  
Zhigang Song ◽  
Yunyu Wang ◽  
Sweta Pendyala
Keyword(s):  
Advanced Technology ◽  
Semiconductor Technology ◽  
Root Cause ◽  
Transmission Electron ◽  
Increasing Trend ◽  
Transmission Electron Microscope Analysis ◽  
Electron Microscope Analysis ◽  
Scaling Down ◽  
Root Cause Identification ◽  
Technology Nodes

Abstract As semiconductor technology keeps scaling down, the conventional physical failure analysis processes have faced increasing challenges and encountered low success rate. It is not only because the defect causing a failure becomes tinier and tinier, but also because some of these defects themselves are invisible. Electrical nano-probing with narrowing down a defect to a single transistor has greatly increased the likeliness of finding a tiny defect in subsequent TEM (transmission Electron Microscope) analysis. However, there is still an increasing trend of encountering an invisible defect at most advanced technology nodes. This paper will present how to identify the root causes of three such invisible defects with the combination of electrical nano-probing and TEM chemical analysis.

Electron Beam Probing of Active Advanced FinFET Circuit with Fin Level Resolution

2018 ◽  
Author(s):  
T. Tong ◽  
H.J. Ryu ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
J. Huening ◽  
...  
Keyword(s):  
Electron Beam ◽  
Semiconductor Devices ◽  
Fault Isolation ◽  
Real Case ◽  
Image Mapping ◽  
Logic State ◽  
Signal Image ◽  
Time Chip ◽  
First Time ◽  
Beam Signal

Abstract This paper shows for the first time chip level electron beam probing on fully functional 10nm and 14nm node FinFET chips with sub-fin level resolution using techniques developed in house. Three novel electron beam probing techniques were developed and used in the debug and fault isolation of advanced node semiconductor devices. These techniques were E-beam logic state imaging, electron-beam signal image mapping, and E-beam device perturbation. Two tools that can offer all three techniques were constructed and used in production. The techniques have been successfully applied to real case chip debug and fault isolation on advanced 10nm and 14nm FinFET on production tools developed in-house. Sub-fin level resolution was achieved for the first time.

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Application of Scan Based FA and Advanced Passive Voltage Contrast Technique in Defect Isolation

2003 ◽  
Author(s):  
Michael B. Schmidt ◽  
Noor Jehan Saujauddin
Keyword(s):  
Failure Analysis ◽  
Large Scale ◽  
Fault Isolation ◽  
Electronic Information ◽  
Scan Testing ◽  
Challenging Environment ◽  
Contrast Technique ◽  
Defect Isolation ◽  
Voltage Contrast ◽  
Higher Sensitivity

Abstract Scan testing and passive voltage contrast (PVC) techniques have been widely used as failure analysis fault isolation tools. Scan diagnosis can narrow a failure to a given net and passive voltage contrast can give real-time, large-scale electronic information about a sample at various stages of deprocessing. In the highly competitive and challenging environment of today, failure analysis cycle time is very important. By combining scan FA with a much higher sensitivity passive voltage contrast technique, one can quickly find defects that have traditionally posed a great challenge.

Application of AFP Nanoprobing Light-Induced Photovoltaic Current in the Failure Analysis

2017 ◽  
Author(s):  
C.Q. Chen ◽  
P.T. Ng ◽  
G.B. Ang ◽  
Francis Rivai ◽  
S.L. Ting ◽  
...  
Keyword(s):  
Image Analysis ◽  
Failure Analysis ◽  
Photovoltaic Effect ◽  
Electrical Characterization ◽  
Fault Isolation ◽  
Device Performance ◽  
Semiconductor Technology ◽  
Current Image ◽  
Scaling Down ◽  
Detailed Circuit

Abstract As semiconductor technology keeps scaling down, failure analysis and device characterizations become more and more challenging. Global fault isolation without detailed circuit information comprises the majority of foundry EFA cases. Certain suspected areas can be isolated, but further narrow-down of transistor and device performance is very important with regards to process monitoring and failure analysis. A nanoprobing methodology is widely applied in advanced failure analysis, especially during device level electrical characterization. It is useful to verify device performance and to prove the problematic structure electrically. But sometimes the EFA spot coverage is too big to do nanoprobing analysis. Then further narrow-down is quite critical to identify the suspected structure before nanoprobing is employed. That means there is a gap between global fault isolation and localized device analysis. Under these kinds of situation, PVC and AFP current image are offen options to identify the suspected structure, but they still have their limitation for many soft defect or marginal fails. As in this case, PVC and AFP current image failed to identify the defect in the spot range. To overcome the shortage of PVC and AFP current image analysis, laser was innovatively applied in our current image analysis in this paper. As is known to all, proper wavelength laser can induce the photovoltaic effect in the device. The photovoltaic effect induced photo current can bring with it some information of the device. If this kind of information was properly interpreted, it can give us some clue of the device performance.

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