InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

2013 ◽  
Vol 6 (3) ◽  
pp. 034001 ◽  
Author(s):  
Edward-Yi Chang ◽  
Chien-I Kuo ◽  
Heng-Tung Hsu ◽  
Che-Yang Chiang ◽  
Yasuyuki Miyamoto
Keyword(s):  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
Submillimeter Wave ◽  
Current Gain ◽  
High Electron ◽  
High Current ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Thin Channel ◽  
Very High

scholarly journals High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Micromachines ◽  
2019 ◽  
Vol 10 (10) ◽  
pp. 690 ◽  
Author(s):  
Idriss Abid ◽  
Riad Kabouche ◽  
Catherine Bougerol ◽  
Julien Pernot ◽  
Cedric Masante ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Channel Structure ◽  
Breakdown Field ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Thin Channel ◽  
Channel Configuration

In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel structure for large contact distances. Also, the buffer assessment revealed a remarkable breakdown field of 5 MV/cm for short contact distances, which is far beyond the theoretical limit of the GaN-based material system. The potential interest of the thin channel configuration in AlN-based high electron mobility transistors is confirmed by the much lower breakdown field that is obtained on the thick channel structure. Furthermore, fabricated transistors are fully functional on both structures with low leakage current, low on-resistance, and reduced temperature dependence as measured up to 300 °C. This is attributed to the ultra-wide bandgap AlN buffer, which is extremely promising for high power, high temperature future applications.

30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency

1999 ◽  
Vol 38 (Part 2, No. 2B) ◽  
pp. L154-L156 ◽  
Author(s):  
Tetsuya Suemitsu ◽  
Tetsuyoshi Ishii ◽  
Haruki Yokoyama ◽  
Takatomo Enoki ◽  
Yasunobu Ishii ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Lattice Matched

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JN14 ◽  
Author(s):  
Yuanzheng Yue ◽  
Zongyang Hu ◽  
Jia Guo ◽  
Berardi Sensale-Rodriguez ◽  
Guowang Li ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

AlGaAs/InGaAs High-Electron Mobility Transistors Fabricated Using Silicon Nitride Passivation and Selective-Etching Process

2021 ◽  
Vol 13 (4) ◽  
pp. 638-641
Author(s):  
Yu-Shyan Lin ◽  
Chun-Cheng Lin
Keyword(s):  
Silicon Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Current Gain ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Characteristics ◽  
Electron Mobility Transistors ◽  
Selective Etch ◽  
Recessed Gate

AlGaAs/InGaAs high-electron mobility transistors (HEMTs) are grown by molecular beam epitaxy (MBE). The studied HEMTs use two AlAs layers as etch-stop layers in the selective-etch recessed-gate fabrication of the HEMTs. The influence of passivation using silicon nitride on HEMTs is examined. Passivation improves the dc, high-frequency, and power characteristics of AlGaAs/InGaAs HEMTs. The passivated HEMT has a maximum extrinsic transconductance of 207 mS/mm, a unity-current-gain frequency (fT) of 13 GHz, and a maximum oscillation frequency (fmax) of 26 GHz. Furthermore, the variation of dc characteristics of the passivated HEMT with temperature is reduced.

Design of Double Delta-Doped Al0.22Ga0.78As/In0.22Ga 0.78As Pseudomorphic HEMTs

2012 ◽  
Vol 229-231 ◽  
pp. 2007-2009 ◽  
Author(s):  
Zhi Ming Wang ◽  
Jin Chao Mou ◽  
Wei Hua Yu ◽  
Xin Lv
Keyword(s):  
Cutoff Frequency ◽  
High Electron Mobility Transistors ◽  
Current Gain ◽  
High Electron ◽  
Saturation Current ◽  
Structure Form ◽  
Electron Mobility Transistors ◽  
Saturation Current Density ◽  
Maximum Current ◽  
Simulation Results

In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.

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