Reliability Study of Mechatronic Power Components Using Spectral Photon Emission Microscopy

In this paper, we present one of the most important failure analysis tools that permits the localizing and the identification of the failure mechanisms. It is a new spectral photon emission system, enabling to localize the failure, and quickly get the photon emission spectra that characterize the failure with high resolution. A diffraction grating is used as a spectrometer in the system. Application results on mechatronic power devices such as HEMT AlGaN/GAN and SiC MOSFETs are reported.

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Effectiveness of Emission Microscopy in the Failure Analysis of CMOS ASIC Devices

ISTFA 1997: Conference Proceedings from the 23rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1997p0299 ◽

1997 ◽

Author(s):

K. H. Parekh ◽

R. Milburn

Keyword(s):

Failure Analysis ◽

Failure Mechanisms ◽

Photon Emission ◽

Reliability Test ◽

Input Output ◽

End User ◽

Final Test ◽

Leakage Currents ◽

Emission Microscopy ◽

Scanning Electron

Abstract In the last several years emission microscopy has become an essential tool for failure analysis, specifically for VLSI devices. This paper describes various die related failure mechanisms in CMOS ASIC devices which were detected by emission microscopy. The failure analysis results discussed in this paper are primarily of the devices which were analyzed over the period of the last three years, 1994 - 1996. These devices were from a broad spectrum of final test failures, qualification and reliability test failures, special evaluation failures, testing and assembly failures at customer sites, and end user field failures. In addition to the failure mechanism statistic scanning electron micrographic illustrations of some of the failure mechanisms and associated damage are presented in this paper. The data presented in this paper clearly show the effectiveness of photon emission microscopy. The value of emission microscopy really lies in quick detection of failure locations on the die which failed functionally or due to excessive static IOD, functional IOD, or input/output leakage currents. It has certainly impacted tum around time of the analysis as significant reduction in analysis time has been achieved. In some cases same day turn around was possible.

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High-resolution study of the emission system of 80Se2 in the near infrared

Canadian Journal of Physics ◽

10.1139/p94-121 ◽

1994 ◽

Vol 72 (11-12) ◽

pp. 919-924 ◽

Cited By ~ 6

Author(s):

E. H. Fink ◽

K. D. Setzer ◽

D. A. Ramsay ◽

Q.-S. Zhu

Keyword(s):

High Resolution ◽

Ground State ◽

Near Infrared ◽

Flow System ◽

Emission Spectra ◽

Electronic Energy ◽

Fourier Transform Spectrometer ◽

Molecular Constants ◽

Electronic Energy Transfer ◽

Emission System

The [Formula: see text] system of 80Se2 has been observed from a discharge flow system where [Formula: see text] molecules were excited by electronic energy transfer from metastable oxygen, O2(a1Δg), to ground state Se2. Emission spectra of the 0–0, 0–1, 0–2, 1–1, 1–2, 1–3, and 2–3 bands have been recorded at high resolution with a Bomem Fourier-transform spectrometer. The rotational structures of the bands are determined by magnetic dipole selection rules. Detailed analysis has yielded accurate molecular constants for the [Formula: see text] and X21g states of 80Se2.

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Nano-probe x-ray analysis and high-resolution imaging on planar defects in high-pressure synthesized infinite-layer superconductor

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171377 ◽

1994 ◽

Vol 52 ◽

pp. 728-729

Author(s):

Y. Y. Wang ◽

H. Zhang ◽

V. P. Dravid ◽

H. Zhang ◽

L. D. Marks ◽

...

Keyword(s):

High Pressure ◽

High Resolution ◽

Atomic Structure ◽

Emission Spectra ◽

High Resolution Electron Microscopy ◽

Planar Defects ◽

X Ray ◽

Infinite Layer ◽

Resolution Electron ◽

Resolution Imaging

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.

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High resolution emission spectra of H2 and D2 near 80 nm

Journal de Physique ◽

10.1051/jphys:0198000410120143100 ◽

1980 ◽

Vol 41 (12) ◽

pp. 1431-1436 ◽

Cited By ~ 16

Author(s):

M. Larzillière ◽

F. Launay ◽

J.-Y. Roncin

Keyword(s):

High Resolution ◽

Emission Spectra

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Prospects of Time-Resolved Photon Emission as a Debug Tool

ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2002p0645 ◽

2002 ◽

Author(s):

Jim Vickers ◽

Nader Pakdaman ◽

Steven Kasapi

Keyword(s):

Photon Emission ◽

Photon Counting ◽

Signal Propagation ◽

General Function ◽

Hot Electron ◽

Detector Performance ◽

Time Resolved ◽

Switching Event ◽

Emission System

Abstract Dynamic hot-electron emission using time-resolved photon counting can address the long-term failure analysis and debug requirements of the semiconductor industry's advanced devices. This article identifies the detector performance parameters and components that are required to scale and keep pace with the industry's requirements. It addresses the scalability of dynamic emission with the semiconductor advanced device roadmap. It is important to understand the limitations to determining that a switching event has occurred. The article explains the criteria for event detection, which is suitable for tracking signal propagation and looking for logic or other faults in which timing is not critical. It discusses conditions for event timing, whose goal is to determine accurately when a switching event has occurred, usually for speed path analysis. One of the uses of a dynamic emission system is to identify faults by studying the emission as a general function of time.

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Analysis of Delta Iddq Soft Fails on Pass Chips

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0305 ◽

2006 ◽

Author(s):

I. Österreicher ◽

S. Eckl ◽

B. Tippelt ◽

S. Döring ◽

R. Prang ◽

...

Keyword(s):

Failure Analysis ◽

Failure Mode ◽

Photon Emission ◽

Complete Analysis ◽

Functional Tests ◽

Analysis Techniques ◽

Atomic Force ◽

Current Consumption ◽

Emission Microscopy ◽

Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

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Introduction of Spectral Mapping through Transmission Grating, Derivative Technique of Photon Emission

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0115 ◽

2014 ◽

Author(s):

Thierry Parrassin ◽

Sylvain Dudit ◽

Michel Vallet ◽

Antoine Reverdy ◽

Hervé Deslandes

Keyword(s):

Integrated Circuits ◽

Failure Analysis ◽

Light Emission ◽

Photon Emission ◽

Optical Path ◽

Spectral Mapping ◽

Additional Information ◽

Transmission Grating ◽

Emission System ◽

Advance Knowledge

Abstract By adding a transmission grating into the optical path of our photon emission system and after calibration, we have completed several failure analysis case studies. In some cases, additional information on the emission sites is provided, as well as understanding of the behavior of transistors that are associated to the fail site. The main application of the setup is used for finding and differentiating easily related emission spots without advance knowledge in light emission mechanisms in integrated circuits.

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A Study of Clustering for the Enhancement of Image Resolution in Dynamic Photon Emission

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0068 ◽

2019 ◽

Author(s):

S. Chef ◽

C. T. Chua ◽

C. L. Gan

Keyword(s):

Signal To Noise Ratio ◽

Photon Emission ◽

Optical Signal ◽

Image Resolution ◽

Time Dimension ◽

Processing Scheme ◽

3D Space ◽

Initial Acquisition ◽

Resolution Limits ◽

Emission Microscopy

Abstract Limited spatial resolution and low signal to noise ratio are some of the main challenges in optical signal observation, especially for photon emission microscopy. As dynamic emission signals are generated in a 3D space, the use of the time dimension in addition to space enables a better localization of switching events. It can actually be used to infer information with a precision above the resolution limits of the acquired signals. Taking advantage of this property, we report on a post-acquisition processing scheme to generate emission images with a better image resolution than the initial acquisition.

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