Introduction of Spectral Mapping through Transmission Grating, Derivative Technique of Photon Emission

2014 ◽  
Author(s):  
Thierry Parrassin ◽  
Sylvain Dudit ◽  
Michel Vallet ◽  
Antoine Reverdy ◽  
Hervé Deslandes
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Light Emission ◽  
Photon Emission ◽  
Optical Path ◽  
Spectral Mapping ◽  
Additional Information ◽  
Transmission Grating ◽  
Emission System ◽  
Advance Knowledge

Abstract By adding a transmission grating into the optical path of our photon emission system and after calibration, we have completed several failure analysis case studies. In some cases, additional information on the emission sites is provided, as well as understanding of the behavior of transistors that are associated to the fail site. The main application of the setup is used for finding and differentiating easily related emission spots without advance knowledge in light emission mechanisms in integrated circuits.

Application of Advanced Back-Side Optical Techniques in ASICs

2013 ◽  
Vol 21 (3) ◽  
pp. 30-35
Author(s):  
Douglas Martin ◽  
Samuel Beilin ◽  
Brett Hamilton ◽  
Darin York ◽  
Philip Baker ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Photon Emission ◽  
Back Side ◽  
Voltage Imaging ◽  
Root Cause ◽  
Silicon Transistors ◽  
Cause Of Failure ◽  
Metal Interconnects ◽  
Application Specific

Failure analysis is important in determining root cause for appropriate corrective action. In order to perform failure analysis of microelectronic application-specific integrated circuits (ASICs) delidding the device is often required. However, determining root cause from the front side is not always possible due to shadowing effects caused by the ASIC metal interconnects. Therefore, back-side polishing is used to reveal an unobstructed view of the ASIC silicon transistors. This paper details how back-side polishing in conjunction with laser-scanned imaging (LSI), laser voltage imaging (LVI), laser voltage probing (LVP), photon emission microscopy (PEM), and laser-assisted device alterations (LADA) were used to uncover the root cause of failure of two ASICs.

scholarly journals Infrared Light Emission From Semiconductor Devices

1996 ◽  
Author(s):  
D.L. Barton ◽  
P. Tangyunyong ◽  
J.M. Soden ◽  
A.Y. Liang ◽  
F.J. Low ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Quantum Efficiency ◽  
Near Infrared ◽  
Light Emission ◽  
Photon Emission ◽  
Ccd Camera ◽  
Infrared Light ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Cooled Ccd

Abstract We present results using near-infrared (NIR) cameras to study emission. characteristics of common defect classes for integrated circuits (ICs). The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and very low read noise. The array was developed for infrared astronomy and has high quantum efficiency in the wavelength range from 0.8 to 2.5 µm. For comparison, the same set of samples used to characterize the performance of the NIR camera were studied using a non-intensified, liquidnitrogen- cooled, slow scan CCD camera (with a spectral range from 400-1100 nm). Our results show that the NIR camera images all of the defect classes studied here with much shorter integration times than the cooled CCD, suggesting that photon emission beyond 1 µm is significantly stronger than at shorter wavelengths.

Failure Analysis of Sub-Micron Semiconductor Integrated Circuit Using Backside Photon Emission Microscopy

1999 ◽  
Author(s):  
Soon Lim ◽  
Jian Hua Bi ◽  
Lian Choo Goh ◽  
Soh Ping Neo ◽  
Sudhindra Tatti
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Flip Chip ◽  
Photon Emission ◽  
Fault Isolation ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication ◽  
Emission Microscopy ◽  
On Chip

Abstract The progress of modern day integrated circuit fabrication technology and packaging has made fault isolation using conventional emission microscopy via the top of the integrated circuit more difficult, if not impossible. This is primarily due to the use of increased levels and density of metal-interconnect, and the advent of new packaging technology, e.g. flip-chip, ball-grid array and lead-on-chip, etc. Backside photon emission microscopy, i.e. performing photon emission microscopy through the bulk of the silicon via the back of the integrated circuit is a solution to this problem. This paper outlines the failure analysis of sub-micron silicon integrated circuits using backside photon emission microscopy. Sample preparation, practical difficulties encountered and case histories will be discussed.

Non-Invasive Backside Failure Analysis of Integrated Circuits by Time-Dependent Light Emission: Picosecond Imaging Circuit Analysis

1998 ◽  
Author(s):  
J.A. Kash ◽  
J.C. Tsang ◽  
D.R. Knebel ◽  
D.P. Vallett
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Parallel Imaging ◽  
Light Emission ◽  
Logic Gate ◽  
Circuit Analysis ◽  
Back Side ◽  
Emission Data ◽  
Time Resolved ◽  
Non Invasive

Abstract A noninvasive backside probe of integrated circuits has been developed. This new probe can diagnose at-speed failures, stuck faults, and other defects. Because it is a highly parallel imaging technique, faults may be isolated which are difficult to locate by other methods. This optical technique has been named “PICA”, for picosecond imaging circuit analysis. PICA relies on the fact that an FET in a CMOS circuit emits a picosecond pulse of light each time the logic gate changes state. The source of this emission is explained. The PICA technique, which combines optical imaging of the emission with picosecond time-resolution, is described. Because of the imaging, time-resolved emission data is acquired for many transistors in parallel. The use of the emission for failure analysis and AC characterization of integrated circuits is demonstrated. Because the emission can be detected from either the front or back side of the chip, it can be used for both front and back side analysis.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

Prospects of Time-Resolved Photon Emission as a Debug Tool

2002 ◽  
Author(s):  
Jim Vickers ◽  
Nader Pakdaman ◽  
Steven Kasapi
Keyword(s):  
Photon Emission ◽  
Photon Counting ◽  
Signal Propagation ◽  
General Function ◽  
Hot Electron ◽  
Detector Performance ◽  
Time Resolved ◽  
Switching Event ◽  
Emission System

Abstract Dynamic hot-electron emission using time-resolved photon counting can address the long-term failure analysis and debug requirements of the semiconductor industry's advanced devices. This article identifies the detector performance parameters and components that are required to scale and keep pace with the industry's requirements. It addresses the scalability of dynamic emission with the semiconductor advanced device roadmap. It is important to understand the limitations to determining that a switching event has occurred. The article explains the criteria for event detection, which is suitable for tracking signal propagation and looking for logic or other faults in which timing is not critical. It discusses conditions for event timing, whose goal is to determine accurately when a switching event has occurred, usually for speed path analysis. One of the uses of a dynamic emission system is to identify faults by studying the emission as a general function of time.

ATE Failure Isolation Methodologies for Failure Analysis, Design Debug and Yield Enhancement

1998 ◽  
Author(s):  
D.S. Patrick ◽  
L.C. Wagner ◽  
P.T. Nguyen
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Yield Enhancement ◽  
Production Test ◽  
Final Test ◽  
Critical Design ◽  
The Past ◽  
Product Engineering ◽  
Time Savings ◽  
Analysis Design

Abstract Failure isolation and debug of CMOS integrated circuits over the past several years has become increasingly difficult to perform on standard failure analysis functional testers. Due to the increase in pin counts, clock speeds, increased complexity and the large number of power supply pins on current ICS, smaller and less equipped testers are often unable to test these newer devices. To reduce the time of analysis and improve the failure isolation capabilities for failing ICS, failure isolation is now performed using the same production testers used in product development, multiprobe and final test. With these production testers, the test hardware, program and pattern sets are already available and ready for use. By using a special interface that docks the production test head to failure isolation equipment such as the emission microscope, liquid crystal station and E-Beam prober, the analyst can quickly and easily isolate the faillure on an IC. This also enables engineers in design, product engineering and the waferfab yield enhancement groups to utilize this equipment to quickly solve critical design and yield issues. Significant cycle time savings have been achieved with the migration to this method of electrical stimulation for failure isolation.

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

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