scholarly journals CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices

2021 ◽  
Vol 11 (22) ◽  
pp. 10914
Author(s):  
José Antonio Heredia-Cancino ◽  
Oscar Salcido ◽  
Ricardo Britto-Hurtado ◽  
Sayra Guadalupe Ruvalcaba-Manzo ◽  
Ramón Ochoa-Landín ◽  
...  
Keyword(s):  
Chemical Bath Deposition ◽  
Low Cost ◽  
Forward Bias ◽  
Optoelectronic Devices ◽  
Chemical Deposition ◽  
Precursor Film ◽  
Ionic Exchange ◽  
Exchange Processes ◽  
Current Voltage ◽  
Cds Thin Films

Complete optoelectronic devices present major difficulties that are caused by aqueous chemical deposition. In this work, a ITO/CdS/PbSe heterostructure was developed, depositing CdS over an ITO-coated substrate via a chemical bath deposition (CBD) technique. The next step involved the growth of a plumbonacrite film over CdS via CBD, where the film acted as a precursor film to be converted to PbSe via ion exchange. The characterization of each material involved in the heterostructure were as follows: the CdS thin films presented a hexagonal crystalline structure and bandgap of 2.42 eV; PbSe had a cubic structure and a bandgap of 0.34 eV. I vs. V measurements allowed the observation of the electrical behavior, which showed a change from an ohmic to diode response by applying a thermal annealing at 150 °C for 5 min. The forward bias of the diode response was in the order of 0.8 V, and the current-voltage characteristics were analyzed by using the modified Shockley model, obtaining an ideality factor of 2.47, being similar to a Schottky diode. Therefore, the reported process to synthesize an ITO/CdS/PbSe heterostructure by aqueous chemical methods was successful and could be used to develop optoelectronic devices.

CHEMICAL BATH DEPOSITION: A PROMISING TECHNOLOGY TO BUILD LOW COST SOLAR CELLS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 605-608 ◽  
Author(s):  
A. NUÑEZ ◽  
P. K. NAIR ◽  
M. T. S. NAIR
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chemical Bath Deposition ◽  
Low Cost ◽  
Promising Technology ◽  
Cds Thin Films ◽  
P Type ◽  
Spectral Factor

Following the model of DeVos and Pauwels (1981), we calculated the spectral factor of efficiencies (η1) for n +-p or n +-i-p heterojunctions that can be formed by different thin absorber materials (p-type or intrinsic(i)) with n +-type CdS thin films produced by conversion of chemically deposited CdS thin films by doping with Cl or In as reported before. The materials with η1 comparable to that of CuInSe 2 (Eg, 1.01 eV: 57%) are AgBiS 2 (Eg, 0.9 eV: 56%), Cu 2 SnS 3 (Eg, 0.91 eV: 57%), PbSnS 3 (Eg, 1.05 eV: 57%), PbSbS 4 (Eg, 1.13 eV: 56%).

Electrical Conduction Mechanisms in n-CdS/p-CuFeO2 Heterojunction Diode

2014 ◽  
Vol 931-932 ◽  
pp. 122-126 ◽  
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen
Keyword(s):  
Conduction Mechanism ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Interface State ◽  
State Density ◽  
Heterojunction Diode ◽  
Current Voltage ◽  
Cds Thin Films ◽  
Exponential Trap Distribution ◽  
Electrical Conduction Mechanisms

In this work, n-CdS/p-CuFeO2 heterojunction diode was fabricated by thermal evaporating CdS thin films on 1 mm thick-CuFeO2 ceramic substrate with substrate temperature kept at 373 K during evaporation process. The forward current-voltage characteristics of n-CdS/p-CuFeO2 heterojunction in a temperature range of 100-300 K were investigated to determine the electrical parameters and conduction mechanism. It was found that, at forward bias below 0.5 V, the conduction mechanism of the diode is dominated by thermionic emission (TE) mechanism. At bias voltage above 0.5 V, the current transport is due to space charge limited current (SCLC) controlled by an exponential trap distribution in the band gap of CdS. The temperature dependence of the saturation current and ideality factor are well described by tunneling enhanced recombination at junction interface with activation and characteristic tunneling energy values as about 1.79 eV and E00 = 86 meV, respectively. The value of interface state density (Nss) evaluated from capacitance spectroscopy increases from 2.09x1011 eV-1cm-2 (at 300 K) to 2.70x1011 eV-1cm-2 (at 363 K). Free carrier concentration of 5.80x1013 cm-3 at room temperature was estimated from capacitance-voltage measurements at 50 kHz.

scholarly journals Mechanisms of charge accumulation in the dark operation of perovskite solar cells

2016 ◽  
Vol 18 (22) ◽  
pp. 14970-14975 ◽  
Author(s):  
Teresa S. Ripolles ◽  
Ajay K. Baranwal ◽  
Koji Nishinaka ◽  
Yuhei Ogomi ◽  
Germà Garcia-Belmonte ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dark Current ◽  
Forward Bias ◽  
Perovskite Solar Cells ◽  
Charge Accumulation ◽  
Current Voltage

In this work, a new current peak at forward bias in the dark current–voltage curves has been identified for standard mesoscopic perovskite solar cells.

Growth of CdS thin films on indium coated glass substrates via chemical bath deposition and subsequent air annealing

2014 ◽  
Vol 320 ◽  
pp. 309-314 ◽  
Author(s):  
Biswajit Ghosh ◽  
Kamlesh Kumar ◽  
Balwant Kr Singh ◽  
Pushan Banerjee ◽  
Subrata Das
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Coated Glass ◽  
Glass Substrates ◽  
Cds Thin Films

Temperature Sensors Based on AlN/4H-SiC Diodes

2021 ◽  
Vol 13 (7) ◽  
pp. 1318-1323
Author(s):  
Myeong-Cheol Shin ◽  
Dong-Hyeon Kim ◽  
Seong-Woo Jung ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Voltage Range ◽  
Radio Frequency Sputtering ◽  
Sensing Applications ◽  
Current Voltage ◽  
Dc Bias

ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

Optimal conditions of pH, composition, and temperature in synthesis of CdS thin films by chemical bath deposition technique

MRS Advances ◽  
2021 ◽  
Author(s):  
Y. Jiménez-Flores ◽  
J. Lefranc-Cabrera ◽  
P. D. Gómez-Barrales ◽  
J. A. Perez-Orozco ◽  
C. G. Flores-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Optimal Conditions ◽  
Deposition Technique ◽  
Chemical Bath Deposition Technique ◽  
Cds Thin Films

scholarly journals Internet of things (IoT) based I-V curve tracer for photovoltaic monitoring systems

2019 ◽  
Vol 13 (3) ◽  
pp. 1022 ◽  
Author(s):  
H. B. Chi ◽  
M. F. N. Tajuddin ◽  
N. H. Ghazali ◽  
A. Azmi ◽  
M. U. Maaz
Keyword(s):  
Internet Of Things ◽  
Low Cost ◽  
Experimental Tests ◽  
Monitoring Systems ◽  
The Internet ◽  
Control Software ◽  
Curve Tracer ◽  
Current Voltage ◽  
The Internet Of Things

<span>This paper presents a low-cost PV current-voltage or <em>I-V</em> curve tracer that has the Internet of Things (IoT) capability. Single ended primary inductance converter (SEPIC) is used to develop the <em>I-V</em> tracer, which is able to cope with rapidly changing irradiation conditions. The <em>I-V</em> tracer control software also has the ability to automatically adapt to the varying irradiation conditions. The performance of the <em>I-V</em> curve tracer is evaluated and verified using simulation and experimental tests.</span>

scholarly journals Influence of Bath Temperature on Structural, Optical and Electrical Properties of Cadmium Sulfi de Thin Films Prepared by Chemical Bath Deposition

2019 ◽  
Vol 21 (4) ◽  
pp. 490-497
Author(s):  
Mikhail V. Gapanovich ◽  
Natalia A. Tikhonina ◽  
Tatiana S. Kokovina ◽  
Dmitry N. Varseev ◽  
Vladimir V. Rakitin ◽  
...  
Keyword(s):  
New York ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Deposition Temperature ◽  
Chemical Deposition ◽  
Bath Temperature ◽  
Thin Solid Films ◽  
Solid Films ◽  
Energy Mater

Abstract. The effect of bath temperature (60-90 °C) on structural, optical and electrical propertiesof CdS thin films deposited by chemical bath deposition (CBD) at a constant precursorconcentration and deposition time was studied. From the XRD analysis, it was found that thestructure of CdS thin fi lms varied with temperature. At lower temperature hexagonal structurewas dominated while at high temperature, the cubic structure was prominent. The band gap ofthe as-prepared CdS thin fi lms was calculated from the UV-Vis spectroscopic data, and it wasfound to be decreased with the increase of temperature. The resistivity of the CdS thin fi lms alsodecreased with the increase in temperature.       REFERENCES1. Kumar S., Sharma P., Sharma V. CdS nanofi lms: effect of deposition temperature on morphology andoptical band gap. Physica Scripta, 2013, v. 88(4), p. 045603. DOI: https://doi.org/10.1088/0031-8949/88/04/0456032. Rondiyaa S., Rokadea A., Gabhalea B., Pandharkara S., Chaudharia M., Dateb A., et al. Effectof bath temperature on optical and morphology properties of CdS thin fi lms grown by chemical bathdeposition. Energy Procedia, 2017, v. 110, pp. 202–209. DOI: https://doi.org/10.1016/j.egypro.2017.03.1283. Fangyang Liu, Yanqing Lai, Jun Liu, Bo Wang, Sanshuang Kuang, Zhian Zhang, et al. Characterizationof chemical bath deposited CdS thin fi lms at different deposition temperature. J. Alloys Compd., 2010,v. 493(1–2), pp. 305–308. DOI: https://doi.org/10.1016/j.jallcom.2009.12.0884. Hariech S., Aida M. S., Bougdira J., Belmahi M., Medjahdi G., Genиve D., et al. Cadmium sulfi de thinfi lms growth by chemical bath deposition. J. Semicond., 2018, v. 39(3), p. 034004. DOI: https://doi.org/10.1088/1674-4926/39/3/0340045. Mane R. S., Lokhande C. D. Chemical deposition method for metal chalcogenide thin fi lms. J. Mater.Chem. Phys., 2000, v. 65(1), p. 1–31. DOI: https://doi.org/10.1016/s0254-0584(00)00217-06. Hodes G. Chemical solution deposition of semiconductor fi lms. Monograph, Boca Raton, CRCPress, 2002, 388 p. DOI: https://doi.org/10.1201/97802039090967. George P. J., Sanchez-Juarez A., Nair P. K. Modifi cation of electrical, optical and crystalline propertiesof chemically deposited CdS fi lms by thermal diffusion of indium and tin. Semicond. Sci. Technol., 1996, v.11(7), pp. 1090–1095. DOI: https://doi.org/10.1088/0268-1242/11/7/0218. Oliva A. I., Solis-Canto O., Castro-Rodriguez R., Quintana P. Formation of the band gap energy on CdSthin fi lms growth by two different techniques Thin Solid Films, 2001, v. 391(1), pp. 28–35. DOI: https://doi.org/10.1016/s0040-6090(01)00830-69. Lejmi N., Savadogo O. The effect of heteropolyacids and isopolyacids on the properties ofchemically bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2001, v. 70(1), pp. 71–83. DOI: https://doi.org/10.1016/s0927-0248(00)00412-810. Gray D.E. American Institute of Physics Handbook. 3rd Edition, McGraw-Hill, New York, pp. 4–58.11. Ravi Kant Choubey, Dipti Desai, Kale S. N., Sunil Kumar. Effect of annealing treatment anddeposition temperature on CdS thin fi lms for CIGS solar cells applications. J. Mater. Sci: Mater. in Elec.,2016, v. 27(8), pp. 7890–7898. DOI: https://doi.org/10.1007/s10854-016-4780-212. Lo Y. S., Choubey R. K., Yu W. C., Hsu W. T., Lan C. W. Shallow bath chemical deposition of CdSthin fi lm. Thin Solid Films, 2011, v. 520(1), pp. 217-223. DOI: https://doi.org/10.1016/j.tsf.2011.07.03513. Cortes A., Gomez H., Marotti R. E., Riveros G., Dalchiele E. A. Grain size dependence of the bandgapin chemical bath deposited CdS thin fi lms. Sol. Energy Mater. Sol. Cells, 2004, v. 82(1-2), pp. 21–34. DOI:https://doi.org/10.1016/j.solmat.2004.01.002 14. Ahmad F. R., Yakimov A., Davis R. J., Her J. H., Cournoyer J. R., Ayensu N. M. Effect of thermal annealingon the properties of cadmium sulfi de deposited via chemical bath deposition. Thin Solid Films, 2013,v. 535, pp. 166–170. DOI: https://doi.org/10.1016/j.tsf.2012.10.08515. Rakhshani A. E., Al-Azab A. S. Characterization of CdS fi lms prepared by chemical-bath deposition.J. Phys. Condens. Matter., 2000, v. 12, pp. 8745–8756. DOI: https://doi.org/10.1088/0953-8984/12/40/31616. Al Kuhaimi S. A. // Vacuum, 1998, v. 51, pp. 349–55.17. Zelaya-Angel O., Alvarado-Gil J. J., Lozada-Morales R., Vargas H., Ferreira da Silva A. Band-gapshift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition.Appl. Phys. Lett., 1994, v. 64(3), pp. 291–293. DOI: https://doi.org/10.1063/1.11118418. Chopra K. L. Thin Film Phenomena. McGraw-Hill, New York, 1969, 266 p.19. Pattabi M., Uchil J. Synthesis of cadmium sulphide nanoparticles. Sol. Energy Mater. Sol. Cells, 2000,v. 63(4), pp. 309–314. DOI: https://doi.org/10.1016/s0927-0248(00)00050-720. Hani Khallaf, Isaiah O. Oladeji, Guangyu Chai, Lee Chow. Characterization of CdS thin fi lms grown bychemical bath deposition using four different cadmium sources. Thin Solid Films, 2008, v. 516(21), pp. 7306–7312. DOI: https://doi.org/10.1016/j.tsf.2008.01.00421. Sasikala G., Thilakan P., Subramanian C. Modifi cation in the chemical bath deposition apparatus,growth and characterization of CdS semiconducting thin fi lms for photovoltaic applications. Sol. Ener gyMater. Sol. Cells, 2000, v. 62(3), pp. 275–293. DOI: https://doi.org/10.1016/s0927-0248(99)00170-122. Toma A., Vigil O., Alvarado-Gil J. J., Lozada-Morales R., Zelaya-Angel O., Vargas H., et al. Infl uenceof thermal annealings in different atmospheres on the band-gap shift and resistivity of CdS thin fi lms. J. Appl.Phys., 1995, v. 78(4), p. 2204–2207. DOI: https://doi.org/10.1063/1.360136

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