Design of Low Power Less Leakage Quarternary Adder Using CMOS

In VLSI, design and implementation of circuits with MOS devices and binary logic are quite usual. The Main Objective is to design a low power and minimum leakage Quaternary adder. The VLSI field consists of Multi-valued logic (MVL) such as ternary and Quaternary Logic (QTL). The Failures such as Short Channel Effects (SCE) Impact-ionization and surface scattering are in normalized aspects. The Quaternary radix on MVL (multi-valued logic) monitors and reduces the area. The Quaternary (four-valued) logic converts the quaternary signals and binary signals produced by the by the existing binary circuits. The Proposed is carried out with LTSPICE tool and CMOS technology.

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Analytical Modeling for Short Channel SOI-MOSFET and to Study its Performance

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.110-116.5150 ◽

2011 ◽

Vol 110-116 ◽

pp. 5150-5154

Author(s):

K. Senthil Kumar ◽

Saptarsi Ghosh ◽

Anup Sarkar ◽

S. Bhattacharya ◽

Subir Kumar Sarkar

Keyword(s):

Low Power ◽

Threshold Voltage ◽

Cmos Technology ◽

Current Drive ◽

Silicon On Insulator ◽

Short Channel Effects ◽

Short Channel ◽

Soi Mosfet ◽

Silicon Bulk ◽

Channel Effects

With the emergence of mobile computing and communication, low power device design and implementation have got a significant role to play in VLSI circuit design. Conventional silicon (bulk CMOS) technology couldn‘t overcome the fundamental physical limitations belonging to sub-micro or nanometer region which leads to alternative device technology like Silicon-on-Insulator (SOI) technology. In a fully-depleted FDSOI structure the electrostatic coupling of channel with source/drain and substrate through the buried layer (BL) is reduced. This allows in turn to reduce the minimal channel length of transistors or to relax the requirements on Si film thickness. A generalized compact threshold voltage model for SOI-MOSFET is developed by solving 2-D Poisson‘s equation in the channel region and analytical expressions are also developed for the same. The performance of the device is evaluated after incorporating the short channel effects. It is observed that in SOI, presence of the oxide layer resists the short channel effects and reduces device anomalies such as substrate leakage by a great factor than bulk-MOS. The threshold voltage and current drive make SOI the ultimate candidate for low power application. Thus SOI-MOSFET technology could very well be the solution for further ultra scale integration of devices and improvised performance.

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CMOS DEVICES ARCHITECTURES AND TECHNOLOGY INNOVATIONS FOR THE NANOELECTRONICS ERA

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156406003618 ◽

2006 ◽

Vol 16 (01) ◽

pp. 193-219 ◽

Cited By ~ 1

Author(s):

S. DELEONIBUS ◽

B. de SALVO ◽

T. ERNST ◽

O. FAYNOT ◽

T. POIROUX ◽

...

Keyword(s):

Low Power ◽

High Performance ◽

Gate Dielectric ◽

Low Voltage ◽

Short Channel Effects ◽

Short Channel ◽

Trade Offs ◽

Future System ◽

The Future ◽

Channel Effects

Innovations in electronics history have been possible because of the strong association of devices and materials research. The demand for low voltage, low power and high performance are the great challenges for engineering of sub 50nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power are reviewed through the issues to address in gate/channel and substrate, gate dielectric as well as source and drain engineering. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. It will be very difficult to compete with CMOS logic because of the low series resistance required to obtain high performance. By introducing new materials ( Ge , diamond/graphite Carbon, HiK, …), Si based CMOS will be scaled beyond the ITRS as the future System-on-Chip Platform integrating new disruptive devices. The association of C-diamond with HiK as a combination for new functionalized Buried Insulators, for example, will bring new ways of improving short channel effects and suppress self-heating. That will allow new optimization of Ion-Ioff trade offs. The control of low power dissipation and short channel effects together with high performance will be the major challenges in the future.

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Suppression of short channel effects in FinFETs using crystalline ZrO2 high-K/Al2O3 buffer layer gate stack for low power device applications

Semiconductor Science and Technology ◽

10.1088/1361-6641/aaab01 ◽

2018 ◽

Vol 33 (3) ◽

pp. 035013 ◽

Cited By ~ 2

Author(s):

Meng-Chen Tsai ◽

Chin-I Wang ◽

Yen-Chang Chen ◽

Yi-Ju Chen ◽

Kai-Shin Li ◽

...

Keyword(s):

Low Power ◽

Buffer Layer ◽

Power Device ◽

Short Channel Effects ◽

Gate Stack ◽

Short Channel ◽

High K ◽

Channel Effects ◽

Device Applications

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Physical mechanisms responsible for short channel effects in MOS devices

10.1109/iedm.1981.190155 ◽

1981 ◽

Cited By ~ 19

Author(s):

T.N. Nguyen ◽

J.D. Plummer

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Physical Mechanisms ◽

Mos Devices ◽

Channel Effects

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Implementation of 20 nm Graphene Channel Field Effect Transistors Using Silvaco TCAD Tool to Improve Short Channel Effects over Conventional MOSFETs

Advances in Technology Innovation ◽

10.46604/aiti.2021.8098 ◽

2021 ◽

Vol 7 (1) ◽

pp. 18-29

Author(s):

Vinod Pralhad Tayade ◽

Swapnil Laxman Lahudkar

Keyword(s):

Low Power ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

20 Nm ◽

Graphene Material

In recent years, demands for high speed and low power circuits have been raised. As conventional metal oxide semiconductor field effect transistors (MOSFETs) are unable to satisfy the demands due to short channel effects, the purpose of the study is to design an alternative of MOSFETs. Graphene FETs are one of the alternatives of MOSFETs due to the excellent properties of graphene material. In this work, a user-defined graphene material is defined, and a graphene channel FET is implemented using the Silvaco technology computer-aided design (TCAD) tool at 100 nm and scaled to 20 nm channel length. A silicon channel MOSFET is also implemented to compare the performance. The results show the improvement in subthreshold slope (SS) = 114 mV/dec, ION/IOFF ratio = 14379, and drain induced barrier lowering (DIBL) = 123 mV/V. It is concluded that graphene FETs are suitable candidates for low power applications.

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An Area and Energy Efficient RAM Cell Design in Quantum Dot Cellular Automata

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2019.8499 ◽

2019 ◽

Vol 16 (10) ◽

pp. 4179-4187

Author(s):

Amanpreet Sandhu ◽

Sheifali Gupta

Keyword(s):

Cellular Automata ◽

Quantum Dot ◽

High Performance ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Quantum Dot Cellular Automata ◽

Channel Effects

The Conventional Complementary Metal oxide semiconductor (CMOS) technology has been revolutionized from the past few decades. However, the CMOS circuit faces serious constraints like short channel effects, quantum effects, doping fluctuations at the nanoscale which limits them to further scaling down at nano meter range. Among various existing nanotechnologies, Quantum dot Cellular Automata (QCA) provides new solution at nanocircuit design. The technical advancement of the paper lies in designing a high performance RAM cell with less QCA cells, less occupational area and lower power dissipation characteristics. The design occupies 12.5% lower area, 16.6% lower input to output delay, and dissipates 18.26% lesser energy than the designs in the literature. The proposed RAMcell is robust due to lesser noise variations. Also it has less fabrication cost due to absence of rotated cells.

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Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping

Thin Solid Films ◽

10.1016/s0040-6090(00)00895-6 ◽

2000 ◽

Vol 369 (1-2) ◽

pp. 383-386 ◽

Cited By ~ 1

Author(s):

C Fink ◽

K.G Anil ◽

H Geiger ◽

W Hansch ◽

J Schulze ◽

...

Keyword(s):

Short Channel Effects ◽

Short Channel ◽

Mos Devices ◽

Channel Effects

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The Effects of the LDD process on Short-channel effects in Nanoscale Charge Trapping Devices

MRS Proceedings ◽

10.1557/proc-0997-i03-13 ◽

2007 ◽

Vol 997 ◽

Author(s):

Moon Kyung Kim ◽

SooDoo Chae ◽

Chung Woo Kim ◽

Joo Yeon Kim ◽

Jo-won Lee ◽

...

Keyword(s):

Low Power ◽

Distributed Storage ◽

Charge Trapping ◽

Oxide Thickness ◽

Short Channel Effects ◽

Short Channel ◽

Relative Variance ◽

Channel Effects ◽

Retention Characteristics ◽

Trapping Devices

AbstractIn the use of single/few electrons in distributed storage for non-volatile, low power, and fast memories, providing statistical reproducibility at the nanoscale is a key challenge since relative variance has dependence and the devices operate with limited number of storage sites. We have used defects at interfaces of dielectrics to evaluate this reproducibility and the performance of memories. These experiments show that nearly 100 electrons can be stored at 30 nm dimensions, sufficient for reproducibility, and that a minimum of tunneling oxide thickness is required to assure reliable retention characteristics. Different tunneling oxide thicknesses and the effect of LDD process are investigated to draw these conclusions.

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The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension

MRS Proceedings ◽

10.1557/proc-0912-c01-06 ◽

2006 ◽

Vol 912 ◽

Cited By ~ 7

Author(s):

Bartek Pawlak ◽

Ray Duffy ◽

Emmanuel Augendre ◽

Simone Severi ◽

Tom Janssens ◽

...

Keyword(s):

Rapid Thermal Annealing ◽

Successful Implementation ◽

Gate Length ◽

Short Channel Effects ◽

Mos Transistors ◽

Short Channel ◽

Mos Devices ◽

Channel Effects ◽

20 Nm ◽

The Impact

AbstractAs extensions have been up till now always used in N-MOS transistors with an activation anneal. Here, we show that also alternative doping by P can result in junction extensions that are extremely abrupt and shallow thus suitable for upcoming transistor technologies. P extensions are manufactured by amorphization, carbon co-implantation and conventional rapid thermal annealing (RTA). The impact of Si interstitials (Sii) flux suppression on the formation of P junction extensions during RTA is demonstrated. We have concluded that optimization of implants followed by RTA spike offers excellent extensions with depth Xj = 20 nm (taken at 5 × 1018 at./cm3), abruptness 3 nm/dec. and Rs = 326 Ω. Successful implementation of these junctions is straightforward for N-MOS devices with 30 nm gate length and results in an improved short channel effects with respect to the As reference.

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