SiC MPS Devices: One Step Closer to the Ideal Diode
2018 ◽
Vol 924
◽
pp. 609-612
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Keyword(s):
One Step
◽
We report on the development of a new generation of SiC Schottky rectifier devices employing a Molybdenum based barrier metal system and a new stripe cell design for field shielding and optimized area utilization. The Schottky barrier height is reduced and thus the conduction losses are decreased significantly. The balance between forward conduction and reverse leakage losses as well as the homogeneity and stability of the new barrier system are investigated carefully.
2021 ◽
Vol 2086
(1)
◽
pp. 012065
2010 ◽
Vol 645-648
◽
pp. 893-896
◽
2015 ◽
Vol 36
(6)
◽
pp. 597-599
◽
Keyword(s):
Keyword(s):