avalanche process
Recently Published Documents


TOTAL DOCUMENTS

41
(FIVE YEARS 6)

H-INDEX

9
(FIVE YEARS 0)

Author(s):  
Anastasiia Trofimova ◽  
Alexander M Povolotsky

Abstract We consider the particle current in the asymmetric avalanche process on a ring. It is known to exhibit a transition from the intermittent to continuous flow at the critical density of particles. The exact expressions for the first two scaled cumulants of the particle current are obtained in the large time limit t ! ∞ via the Bethe ansatz and a perturbative solution of the TQ-equation. The results are presented in an integral form suitable for the asymptotic analysis in the large system size limit N ! ∞. In this limit the first cumulant, the average current per site or the average velocity of the associated interface, is asymptotically finite below the critical density and grows linearly and exponentially times power law prefactor at the critical density and above, respectively. The scaled second cumulant per site, i.e. the diffusion coefficient or the scaled variance of the associated interface height, shows the O(N-1⁄2) decay expected for models in the Kardar-Parisi-Zhang universality class below the critical density, while it is growing as O(N3⁄2) and exponentially times power law prefactor at the critical point and above. Also, we identify the crossover regime and obtain the scaling functions for the uniform asymptotics unifying the three regimes. These functions are compared to the scaling functions describing crossover of the cumulants of the avalanche size, obtained as statistics of the first return area under the time space trajectory of the Vasicek random process.


Photonics ◽  
2021 ◽  
Vol 8 (4) ◽  
pp. 98
Author(s):  
Naseem ◽  
Zohauddin Ahmad ◽  
Yan-Min Liao ◽  
Rui-Lin Chao ◽  
Po-Shun Wang ◽  
...  

In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type In0.53Ga0.47As absorber layer and thin In0.52Al0.48As dual multiplication (M-) layer (60 and 88 nm), exhibit a wide optical-to-electrical bandwidth (16 GHz) with high responsivity (2.5 A/W) under strong light illumination (around 1 mW). The measured bias dependent 3-dB O-E bandwidth was pinned at 16 GHz without any serious degradation near the saturation current output. To further increase the speed, we downscaled the active diameter and adopted a back-side illuminated structure with flip-chip bonding for batter optical alignment tolerance. A significant improvement in maximum bandwidth was demonstrated (25 versus 18 GHz). On the other hand, we adopted a thick dual M-layer (200 and 300 nm) and 2 μm absorber layer in the APD design to circumvent the problem of serious bandwidth degradation under high gain (>100) and high-power operation which significantly enhanced the dynamic range. Due to dual M-layer, the carriers could be energized in the first M-layer then propagate to the second M-layer to trigger the avalanche process. In both cases, despite variation in thickness of the absorber and M-layer, the cascade avalanche process leads to values close to the ultra-high gain bandwidth product (GBP) of around 460 GHz with a responsivity of 0.4 and 1 A/W at unit gain for the thin and thick M-layer devices, respectively. We successfully achieved a good sensitivity of around −20.6 dBm optical modulation amplitude (OMA) at a data rate of 25.78 Gb/s, by packaging the fabricated APDs (thin dual M-layer (60 and 88 nm) version) with a 25 Gb/s trans-impedance amplifier in a 100 Gb/s ROSA package. The results show that, the incorporation of a dual multiplication (M) layer structure in the APD opens a new window to obtaining the higher GBP in order to meet the requirements for high-speed transmission without the need of further downscaling the multiplication layer.


Complexity ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-11
Author(s):  
Wen-Jun Jiang ◽  
Run-Ran Liu ◽  
Chun-Xiao Jia

Real-world complex systems always interact with each other, which causes these systems to collapse in an avalanche or cascading manner in the case of random failures or malicious attacks. The robustness of multilayer networks has attracted great interest, where the modeling and theoretical studies of which always rely on the concept of multilayer networks and percolation methods. A straightforward and tacit assumption is that the interdependence across network layers is strong, which means that a node will fail entirely with the removal of all links if one of its interdependent nodes in other network layers fails. However, this oversimplification cannot describe the general form of interactions across the network layers in a real-world multilayer system. In this paper, we reveal the nature of the avalanche disintegration of general multilayer networks with arbitrary interdependency strength across network layers. Specifically, we identify that the avalanche process of the whole system can essentially be decomposed into two microscopic cascading dynamics in terms of the propagation direction of the failures: depth penetration and scope extension. In the process of depth penetration, the failures propagate from layer to layer, where the greater the number of failed nodes is, the greater is the destructive power that will emerge in an interdependency group. In the process of scope extension, failures propagate with the removal of connections in each network layer. Under the synergy of the two processes, we find that the percolation transition of the system can be discontinuous or continuous with changes in the interdependency strength across network layers, which means that a sudden system-wide collapse can be avoided by controlling the interdependency strength across network layers. Our work not only reveals the microscopic mechanism of global collapse in multilayer infrastructure systems but also provides stimulating ideas on intervention programs and approaches for cascade failures.


2018 ◽  
Vol 505 ◽  
pp. 1095-1102 ◽  
Author(s):  
Da-Peng Hao ◽  
Gang Tang ◽  
Zhi-Peng Xun ◽  
Hui Xia ◽  
Kui Han

2018 ◽  
Vol 58 (2) ◽  
Author(s):  
Juozas Vyšniauskas ◽  
Eugenijus Gaubas

An evolution of the transient characteristics of the GaN p-i-n diodes, operating in the avalanche mode and acting as particle sensors, has been simulated by using the Synopsys TCAD Sentaurus software package and the drift-diffusion approach. Profiling of the charge generation, recombination and drift-diffusion processes has been performed over a nanosecond time-scale with a precision of a few picoseconds and emulated through the photo-excitation of an excess carrier domain at different locations of the active volume of a diode. Shockley–Read–Hall (SRH), Auger and radiative recombination processes have been taken into account. Fast and slow components within a current transient have been analysed based on the consideration of the carrier spatial distribution at different instants of the avalanche process. The internal gain due to charge multiplication ensures the sufficient charge collection on electrodes of the relatively thin (5 µm) diode operating in the avalanche mode. It has been shown that the simulated evolution of the detector transient responses by employing the drift-diffusion approach reproduces properly the qualitative modifications of the main features of a detector with an internal gain, realized by induction of the avalanche processes governed by the applied external voltage.


2017 ◽  
Vol 472 ◽  
pp. 77-85 ◽  
Author(s):  
Da-Peng Hao ◽  
Gang Tang ◽  
Hui Xia ◽  
Zhi-Peng Xun ◽  
Kui Han

Author(s):  
H. Hora ◽  
G. Korn ◽  
S. Eliezer ◽  
N. Nissim ◽  
P. Lalousis ◽  
...  

Measured highly elevated gains of proton–boron (HB11) fusion (Picciotto et al., Phys. Rev. X 4, 031030 (2014)) confirmed the exceptional avalanche reaction process (Lalousis et al., Laser Part. Beams 32, 409 (2014); Hora et al., Laser Part. Beams 33, 607 (2015)) for the combination of the non-thermal block ignition using ultrahigh intensity laser pulses of picoseconds duration. The ultrahigh acceleration above $10^{20}~\text{cm}~\text{s}^{-2}$ for plasma blocks was theoretically and numerically predicted since 1978 (Hora, Physics of Laser Driven Plasmas (Wiley, 1981), pp. 178 and 179) and measured (Sauerbrey, Phys. Plasmas 3, 4712 (1996)) in exact agreement (Hora et al., Phys. Plasmas 14, 072701 (2007)) when the dominating force was overcoming thermal processes. This is based on Maxwell’s stress tensor by the dielectric properties of plasma leading to the nonlinear (ponderomotive) force $f_{\text{NL}}$ resulting in ultra-fast expanding plasma blocks by a dielectric explosion. Combining this with measured ultrahigh magnetic fields and the avalanche process opens an option for an environmentally absolute clean and economic boron fusion power reactor. This is supported also by other experiments with very high HB11 reactions under different conditions (Labaune et al., Nature Commun. 4, 2506 (2013)).


Sign in / Sign up

Export Citation Format

Share Document