scholarly journals GaN power IC normally-on and normally-off transistors technology and simulation

2021 ◽  
Vol 2086 (1) ◽  
pp. 012058
Author(s):  
V I Egorkin ◽  
V A Bespalov ◽  
O B Kukhtyaeva ◽  
V E Zemlyakov ◽  
V V Kapaev ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Drain Current ◽  
Experimental Results ◽  
Simulation Data ◽  
Current Channel ◽  
Channel Density ◽  
Technical Requirements ◽  
Device Reliability ◽  
Cap Layer ◽  
Gan On Si

Abstract GaN technology has been waiting to be widely adopted because of its specific technical requirements. Integration of transistor and driver in a single die will enable to overcome problems with gate driving, high cost of circuit and low device reliability. This paper demonstrates technology of GaN-on-Si normally-on and normally-off transistor with different p-GaN cap-layer thickness as well as simulation of these devices. The simulation data confirm experimental results. P-GaN cap-layer thickness affects the current channel density: the more p-GaN thickness, the less channel density. The fabricated transistors have a maximum drain current in open state of about 800 mA/mm.

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

1996 ◽  
Vol 457 ◽  
Author(s):  
R. Banerjee ◽  
X. D. Zhang ◽  
S. A. Dregia ◽  
H. L. Fraser
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Thermodynamic Model ◽  
Interfacial Reactions ◽  
Experimental Results ◽  
Structural Transitions ◽  
Nanocomposite Thin Film ◽  
Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

Experimental Results of Space Layer Thickness for Blue-Wavelength Dual-Layered Disc

2001 ◽  
Vol 40 (Part 1, No. 3B) ◽  
pp. 1643-1644 ◽  
Author(s):  
Kyung-Geun Lee ◽  
Chang-Min Park ◽  
Du-Seop Yoon ◽  
Myung-Do Ro ◽  
Yoon-Gi Kim ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Experimental Results ◽  
Space Layer ◽  
Blue Wavelength

Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

2015 ◽  
Vol 117 (5) ◽  
pp. 055709 ◽  
Author(s):  
J. Yang ◽  
D. G. Zhao ◽  
D. S. Jiang ◽  
P. Chen ◽  
J. J. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Layer Thickness ◽  
Structural Characteristics ◽  
Indium Content ◽  
Cap Layer ◽  
High Indium Content

scholarly journals Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode

2018 ◽  
Vol 69 (5) ◽  
pp. 390-394
Author(s):  
Martin Florovič ◽  
Róbert Szobolovszký ◽  
Jaroslav Kováč ◽  
Jaroslav Kováč ◽  
Aleš Chvála ◽  
...  
Keyword(s):  
Operation Mode ◽  
Drain Current ◽  
Temperature Dependent ◽  
Saturation Velocity ◽  
Channel Temperature ◽  
Device Reliability ◽  
Source Resistance ◽  
Current Change ◽  
Voltage Saturation

Abstract GaN-based HEMTs’ high potential is deteriorated by self-heating during the operation, this has influence on the electrical properties as well as device reliability. This work is focused on an average channel temperature determination of power AlGaN/GaN HEMT prepared on SiC substrate using quasi-static and pulsed I-V characterization. There was analyzed the drain current change relation to temperature dependent electrical HEMT parameters such as source resistance, threshold voltage, saturation velocity, resp. leakage current which allows to calculate an average channel temperature versus dissipated power for various ambient temperature. Differential temperature of investigated device with and without heatsink was determined. Obtained results were discussed using simulated spatial temperature distribution.

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

scholarly journals Process Parameter Optimization in Fused Deposition Modeling (FDM) Using Response Surface Methodology (RSM)

2020 ◽  
Author(s):  
Muhammad Salman Mustafa ◽  
Muhammad Qasim Zafar ◽  
Muhammad Arslan Muneer ◽  
Muhammad Arif ◽  
Farrukh Arsalan Siddiqui ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Response Surface Methodology ◽  
Impact Strength ◽  
Response Surface ◽  
Layer Thickness ◽  
Fused Deposition Modeling ◽  
Experimental Results ◽  
Fused Deposition ◽  
Deposition Modeling ◽  
Printing Parameters

Abstract Fused Deposition Modeling (FDM) is a widely adopted additive manufacturing process to produce complex 3D structures and it is typically used in the fabrication of biodegradable materials e.g. PLA/PHA for biomedical applications. However, FDM as a fabrication process for such material needs to be optimized to enhance mechanical properties. In this study, dogbone and notched samples are printed with the FDM process to determine optimum values of printing parameters for superior mechanical properties. The effect of layer thickness, infill density, and print bed temperature on mechanical properties is investigated by applying response surface methodology (RSM). Optimum printing parameters are identified for tensile and impact strength and an empirical relation has been formulated with response surface methodology (RSM). Furthermore, the analysis of variance (ANOVA) was performed on the experimental results to determine the influence of the process parameters and their interactions. ANOVA results demonstrate that 44.7% infill density, 0.44 mm layer thickness, and 20C° printing temperatures are the optimum values of printing parameters owing to improved tensile and impact strength respectively. The experimental results were found in strong agreement with the predicted theoretical results.

Measurements of a Novel Digital Hydraulic Valve Comprising a Cushioning Feature

2019 ◽  
Vol 142 (1) ◽  
Author(s):  
Niels C. Bender ◽  
Andreas Plöckinger ◽  
Paul Foschum ◽  
Bernd Winkler ◽  
Henrik C. Pedersen
Keyword(s):  
Experimental Results ◽  
Test Rig ◽  
Soft Landing ◽  
Valve Design ◽  
Simulation Data ◽  
Switching Dynamics ◽  
Significant Difference ◽  
Pressure Dynamics ◽  
Induced Flow ◽  
Hydraulic Valve

Abstract This article presents simulation data and measurements of a novel valve concept that features a soft landing concept. The purpose is to validate the design framework that has been applied to design the valve. The experimental results are obtained with a test rig manufactured specifically for this type of valve design. The validation includes studying the valves switching dynamics, cushion pressure dynamics, and movement-induced flow (MIF). The tests show that the tendencies are captured accurately although the exact magnitudes of forces do not match fully and a noticeable difference between simulated and measured plunger position is revealed. This amounts in a significant difference in the cushion pressure. Therefore, the pressure model is validated by using the measured lift and velocity derived hereof and this shows sufficient correspondence between the two pressures.

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