Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons

2011 ◽  
Vol 23 (18) ◽  
pp. 2064-2068 ◽  
Author(s):  
Jang-Sik Lee ◽  
Yong-Mu Kim ◽  
Jeong-Hwa Kwon ◽  
Jae Sung Sim ◽  
Hyunjung Shin ◽  
...  
Keyword(s):  
Data Storage ◽  
Capacitive Coupling ◽  
Memory Devices ◽  
Multilevel Data ◽  
Trapped Electrons

A 1,3,5-triazine based polymer as a nonlinear near-infrared antenna for two-photon activated volumetric optical memory devices

2015 ◽  
Vol 3 (41) ◽  
pp. 10775-10782 ◽  
Author(s):  
I. F. A. Mariz ◽  
F. Siopa ◽  
C. A. B. Rodrigues ◽  
C. A. M. Afonso ◽  
X. Chen ◽  
...  
Keyword(s):  
Data Storage ◽  
Near Infrared ◽  
Optical Memory ◽  
Memory Devices ◽  
Two Photon ◽  
Near Ir

Multilayer data storage is demonstrated in films of photochromic (PC) molecules doped with a nonlinear Near-IR-antenna polymer based on triazine.

Simulations of nanomagnet clusters with perpendicular uniaxial anisotropy for multilevel data storage

2006 ◽  
Vol 99 (8) ◽  
pp. 08G305 ◽  
Author(s):  
Q. Xiao ◽  
R. V. Krotkov ◽  
M. T. Tuominen
Keyword(s):  
Data Storage ◽  
Uniaxial Anisotropy ◽  
Multilevel Data

scholarly journals Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Ye Zhou ◽  
Su-Ting Han ◽  
Prashant Sonar ◽  
V. A. L. Roy
Keyword(s):  
Data Storage ◽  
Charge Trapping ◽  
Memory Device ◽  
Multilevel Data ◽  
Trapping Mechanism

scholarly journals Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7535
Author(s):  
Ghulam Dastgeer ◽  
Amir Muhammad Afzal ◽  
Jamal Aziz ◽  
Sajjad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Resistance State ◽  
Building Blocks ◽  
Memory Device ◽  
Memory Storage ◽  
Memory Devices ◽  
Two Dimensional ◽  
Ag Filament ◽  
Resistance State

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

scholarly journals Synthesis and Characterization of Multiferroic BiFeO3 for Data Storage

2020 ◽  
Author(s):  
Kuldeep Chand Verma
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Lone Pair ◽  
Memory Devices ◽  
Spintronic Devices ◽  
Antiferromagnetic Ordering ◽  
Multiferroic Bifeo3 ◽  
Non Volatile Memory ◽  
New Generation ◽  
Lone Pair Electrons

Multiferroic BiFeO3 deals with spintronic devices involved spin-charge processes and applicable in new non-volatile memory devices to store information for computing performance and the magnetic random access memories storage. Since multiferroic leads to the new generation memory devices for which the data can be written electrically and read magnetically. The main advantage of present study of multiferroic BiFeO3 is that to observe magnetoelectric effects at room temperature. The nanostructural growth (for both size and shape) of BiFeO3 may depend on the selection of appropriate synthesis route, reaction conditions and heating processes. In pure BiFeO3, the ferroelectricity is induced by 6s2 lone-pair electrons of Bi3+ ions and the G-type antiferromagnetic ordering resulting from Fe3+ spins order of cycloidal (62-64 nm wavelength) occurred below Neel temperature, TN = 640 K. The multiferroicity of BiFeO3 is disappeared due to factors such as impurity phases, leakage current and low value of magnetization. Therefore, to overcome such factors to get multiferroic enhancement in BiFeO3, there are different possible ways like changes dopant ions and their concentrations, BiFeO3 composites as well as thin films especially multilayers.

Al-Sb-Ge phase change material: A candidate for multilevel data storage with high-data retention and fast speed

2018 ◽  
Vol 157 ◽  
pp. 152-156 ◽  
Author(s):  
Yuan Xue ◽  
Sannian Song ◽  
Shuai Yan ◽  
Tianqi Guo ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Multilevel Data ◽  
Data Retention ◽  
High Data ◽  
Fast Speed ◽  
Change Material

2D MXene–TiO 2 Core–Shell Nanosheets as a Data‐Storage Medium in Memory Devices

2020 ◽  
Vol 32 (17) ◽  
pp. 1907633 ◽  
Author(s):  
Benzheng Lyu ◽  
Yongsuk Choi ◽  
Hongyue Jing ◽  
Chuan Qian ◽  
Hyunseok Kang ◽  
...  
Keyword(s):  
Data Storage ◽  
Core Shell ◽  
Memory Devices ◽  
Storage Medium
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