scholarly journals Synthesis and Characterization of Multiferroic BiFeO3 for Data Storage

2020 ◽  
Author(s):  
Kuldeep Chand Verma
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Lone Pair ◽  
Memory Devices ◽  
Spintronic Devices ◽  
Antiferromagnetic Ordering ◽  
Multiferroic Bifeo3 ◽  
Non Volatile Memory ◽  
New Generation ◽  
Lone Pair Electrons

Multiferroic BiFeO3 deals with spintronic devices involved spin-charge processes and applicable in new non-volatile memory devices to store information for computing performance and the magnetic random access memories storage. Since multiferroic leads to the new generation memory devices for which the data can be written electrically and read magnetically. The main advantage of present study of multiferroic BiFeO3 is that to observe magnetoelectric effects at room temperature. The nanostructural growth (for both size and shape) of BiFeO3 may depend on the selection of appropriate synthesis route, reaction conditions and heating processes. In pure BiFeO3, the ferroelectricity is induced by 6s2 lone-pair electrons of Bi3+ ions and the G-type antiferromagnetic ordering resulting from Fe3+ spins order of cycloidal (62-64 nm wavelength) occurred below Neel temperature, TN = 640 K. The multiferroicity of BiFeO3 is disappeared due to factors such as impurity phases, leakage current and low value of magnetization. Therefore, to overcome such factors to get multiferroic enhancement in BiFeO3, there are different possible ways like changes dopant ions and their concentrations, BiFeO3 composites as well as thin films especially multilayers.

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240002 ◽  
Author(s):  
PEDRAM KHALILI AMIRI ◽  
KANG L. WANG
Keyword(s):  
Magnetic Anisotropy ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Magnetic Films ◽  
Magnetization Dynamics ◽  
Spintronic Devices ◽  
Magnetic Random Access Memory ◽  
Thin Magnetic Films ◽  
Potential Applications ◽  
New Generation

Electric-field-control of magnetism can dramatically improve the energy efficiency of spintronic devices and enhance the performance of magnetic memories. More generally, it expands the range of applications of nonvolatile spintronic devices, by making them energetically competitive compared to conventional semiconductor solutions for logic and computation, thereby potentially enabling a new generation of ultralow-power nonvolatile spintronic systems. This paper reviews recent experiments on the voltage-controlled magnetic anisotropy (VCMA) effect in thin magnetic films, and their device implications. The interfacial perpendicular anisotropy in layered magnetic material stacks, as well as its modulation by voltage, are discussed. Ferromagnetic resonance experiments and VCMA-induced high-frequency magnetization dynamics are reviewed. Finally, we discuss recent progress on voltage-induced switching of magnetic tunnel junction devices and its potential applications to magnetic random access memory (MRAM).

Organic small molecule-based RRAM for data storage and neuromorphic computing

2020 ◽  
Vol 8 (37) ◽  
pp. 12714-12738 ◽  
Author(s):  
Boyuan Mu ◽  
Hsiao-Hsuan Hsu ◽  
Chi-Ching Kuo ◽  
Su-Ting Han ◽  
Ye Zhou
Keyword(s):  
Small Molecules ◽  
Data Storage ◽  
Small Molecule ◽  
State Of The Art ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Neuromorphic Computing

Recent state-of-the-art developments related to organic small molecules for resistive random-access memory devices has been emphasized.

scholarly journals Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri2 Perovskite

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6629
Author(s):  
Wang Ke ◽  
Xiaoting Yang ◽  
Tongyu Liu
Keyword(s):  
Data Storage ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Memory Device ◽  
Resistance Switching ◽  
Memory Devices ◽  
Switching Effect ◽  
Short Period ◽  
Non Volatile Memory ◽  
Order Of Magnitude

In this study, the CsPbBrI2 perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br+ into the CsPbI3 film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI2 perovskite film, the Ag/CsPbBrI2/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI2/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI2 perovskite film is uniform and dense, and the Ag/CsPbBrI2/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI2/ITO memory devices based on CsPbBrI2 perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI2 film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.

scholarly journals Multiferroicity in Aurivillius Based Bi4Ti3O12 Ceramics: An Overview, Future Prospective and Comparison with Ferrites

2021 ◽  
pp. 311-335
Author(s):  
S. Bhardwaj
Keyword(s):  
Data Storage ◽  
Modern Society ◽  
Future Perspective ◽  
Smart Devices ◽  
Storage Devices ◽  
Spintronic Devices ◽  
Device Applications ◽  
Multiple State ◽  
New Generation ◽  
Bi4ti3o12 Ceramics

The growing modern society demands more new generation devices to fulfil their requirements. This has forced the scientific community to develop multifunctional smart devices. Aurivillius based Bi4Ti3O12 ceramics are one of the leading families of oxide materials, which attract immense attention due to their electrical, ferroelectric, optical, and dielectric properties. These materials have gained special attention due to their numerous device applications such as magnetic recording, sensors, read head technology, spintronic devices, switching devices, data storage devices and multiple state memory devices etc. Multiferroic are the materials in which two or more than two ferroic orders exist simultaneously. This chapter focuses on the possibility of existence of multiferroic behaviour in Aurivillius based compounds specially Bi4Ti3O12. Firstly, we have discussed the basics of multiferroics and their types and the magnetoelectric effect. The effect of different dopants in originating the multiferroism in Bi4Ti3O12 have been reviewed and discuss in detail. At the end comparison of multiferroic and ferrite materials and their future perspective have been discussed.

scholarly journals Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Yi Shuang ◽  
Shogo Hatayama ◽  
Junseop An ◽  
Jinpyo Hong ◽  
Daisuke Ando ◽  
...  
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Three Dimensional ◽  
Random Access ◽  
Oxide Semiconductor ◽  
Memory Devices ◽  
Electrode Structure ◽  
In Series ◽  
Scale Down ◽  
Switching Characteristics

AbstractThree-dimensional crossbar technology has been of great significance for realizing high density and multiple terabytes of data storage in memory devices. However, to further scale down the size of memory devices, a selector exhibiting nonlinear electrical properties should be in series with a memory layer in case of unwanted sneak current disturbance. Conventional selectors usually utilize a complicated multilayer structure to realize the high nonlinearity of current, which might be incompatible with certain manufacturing processes or limit the scalability of memory. Herein, we propose a simple heterojunction diode using an n-type oxide semiconductor, specifically, InGaZnO4 (IGZO), and a p-type phase change material (PCM), specifically, N-doped Cr2Ge2Te6 (NCrGT), to realize self-selective performance. The electrode/IGZO/NCrGT/plug-electrode structure with an IGZO/NCrGT pn diode and NCrGT/plug-electrode Schottky diode can realize bidirectional, self-selective phase change random access memory (PCRAM) for either amorphous or crystalline NCrGT. The approximate equilibrium energy band diagrams for the IGZO/NCrGT pn junction and the IGZO/NCrGT/W hybrid junction were proposed to explain the possible conduction mechanism. We demonstrated that hybrid diode-type PCM memory exhibits both selectivity and resistive switching characteristics. The present findings offer new insight into selector technology for PCM.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

Deoxyribonucleic Acid as a Tool for Digital Information Storage: An Overview

2019 ◽  
Vol 15 (01) ◽  
pp. 1-8
Author(s):  
Ashish C Patel ◽  
C G Joshi
Keyword(s):  
Data Storage ◽  
Dna Sequences ◽  
Consensus Sequence ◽  
Random Access ◽  
Information Storage ◽  
Digital Data ◽  
Digital Information ◽  
Multiple Sequence ◽  
Digital World ◽  
Digital File

Current data storage technologies cannot keep pace longer with exponentially growing amounts of data through the extensive use of social networking photos and media, etc. The "digital world” with 4.4 zettabytes in 2013 has predicted it to reach 44 zettabytes by 2020. From the past 30 years, scientists and researchers have been trying to develop a robust way of storing data on a medium which is dense and ever-lasting and found DNA as the most promising storage medium. Unlike existing storage devices, DNA requires no maintenance, except the need to store at a cool and dark place. DNA has a small size with high density; just 1 gram of dry DNA can store about 455 exabytes of data. DNA stores the informations using four bases, viz., A, T, G, and C, while CDs, hard disks and other devices stores the information using 0’s and 1’s on the spiral tracks. In the DNA based storage, after binarization of digital file into the binary codes, encoding and decoding are important steps in DNA based storage system. Once the digital file is encoded, the next step is to synthesize arbitrary single-strand DNA sequences and that can be stored in the deep freeze until use.When there is a need for information to be recovered, it can be done using DNA sequencing. New generation sequencing (NGS) capable of producing sequences with very high throughput at a much lower cost about less than 0.1 USD for one MB of data than the first sequencing technologies. Post-sequencing processing includes alignment of all reads using multiple sequence alignment (MSA) algorithms to obtain different consensus sequences. The consensus sequence is decoded as the reversal of the encoding process. Most prior DNA data storage efforts sequenced and decoded the entire amount of stored digital information with no random access, but nowadays it has become possible to extract selective files (e.g., retrieving only required image from a collection) from a DNA pool using PCR-based random access. Various scientists successfully stored up to 110 zettabytes data in one gram of DNA. In the future, with an efficient encoding, error corrections, cheaper DNA synthesis,and sequencing, DNA based storage will become a practical solution for storage of exponentially growing digital data.

Analysis of 6T SRAM Cell in Different Technologies

2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda
Keyword(s):  
Low Power ◽  
Data Storage ◽  
Low Voltage ◽  
Random Access ◽  
Storage Device ◽  
Cmos Process ◽  
Process Technology ◽  
Digital Devices ◽  
Noise Margin ◽  
Sram Cell

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).

scholarly journals Implications of NVM Based Storage on Memory Subsystem Management

2020 ◽  
Vol 10 (3) ◽  
pp. 999
Author(s):  
Hyokyung Bahn ◽  
Kyungwoon Cho
Keyword(s):  
Random Access ◽  
Disk Drive ◽  
Main Memory ◽  
Memory Storage ◽  
Storage Device ◽  
Storage Devices ◽  
Large Memory ◽  
Memory Subsystems ◽  
Non Volatile Memory ◽  
Management Techniques

Recently, non-volatile memory (NVM) has advanced as a fast storage medium, and legacy memory subsystems optimized for DRAM (dynamic random access memory) and HDD (hard disk drive) hierarchies need to be revisited. In this article, we explore the memory subsystems that use NVM as an underlying storage device and discuss the challenges and implications of such systems. As storage performance becomes close to DRAM performance, existing memory configurations and I/O (input/output) mechanisms should be reassessed. This article explores the performance of systems with NVM based storage emulated by the RAMDisk under various configurations. Through our measurement study, we make the following findings. (1) We can decrease the main memory size without performance penalties when NVM storage is adopted instead of HDD. (2) For buffer caching to be effective, judicious management techniques like admission control are necessary. (3) Prefetching is not effective in NVM storage. (4) The effect of synchronous I/O and direct I/O in NVM storage is less significant than that in HDD storage. (5) Performance degradation due to the contention of multi-threads is less severe in NVM based storage than in HDD. Based on these observations, we discuss a new PC configuration consisting of small memory and fast storage in comparison with a traditional PC consisting of large memory and slow storage. We show that this new memory-storage configuration can be an alternative solution for ever-growing memory demands and the limited density of DRAM memory. We anticipate that our results will provide directions in system software development in the presence of ever-faster storage devices.

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