Nanostructured Zirconium‐Oxide Bioceramic Coatings Derived from the Anodized Al/Zr Metal Layers

The optic axis of an electron microscope objective lens is usually assumed to be straight and co-linear with the mechanical center. No reason exists to assume such perfection and, indeed, simple reasoning suggests that it is a complicated curve. A current centered objective lens with a non-linear optic axis when used in conjunction with other lenses, leads to serious image errors if the nature of the specimen is such as to produce intense inelastic scattering.

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STM of freeze-fracture replicas: Problems and promises

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100146187 ◽

1993 ◽

Vol 51 ◽

pp. 68-69

Author(s):

J. T. Woodward ◽

J. A. N. Zasadzinski

Keyword(s):

Scanning Tunneling Microscope ◽

Organic Materials ◽

Freeze Fracture ◽

Atomic Resolution ◽

Scanning Tunneling ◽

Tunneling Microscope ◽

Molecular Scale ◽

Organic Surfaces ◽

Metal Layers ◽

Conductive Surfaces

The Scanning Tunneling Microscope (STM) offers exciting new ways of imaging surfaces of biological or organic materials with resolution to the sub-molecular scale. Rigid, conductive surfaces can readily be imaged with the STM with atomic resolution. Unfortunately, organic surfaces are neither sufficiently conductive or rigid enough to be examined directly with the STM. At present, nonconductive surfaces can be examined in two ways: 1) Using the AFM, which measures the deflection of a weak spring as it is dragged across the surface, or 2) coating or replicating non-conductive surfaces with metal layers so as to make them conductive, then imaging with the STM. However, we have found that the conventional freeze-fracture technique, while extremely useful for imaging bulk organic materials with STM, must be modified considerably for optimal use in the STM.

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Nano-sized structures incorporating ferromagnetic metal layers: new effects due to the passage of a perpendicular current

Uspekhi Fizicheskih Nauk ◽

10.3367/ufnr.0178.200804h.0433 ◽

2008 ◽

Vol 178 (4) ◽

pp. 433

Author(s):

Yurii V. Gulyaev ◽

P.E. Zil'berman ◽

E.M. Epshtein

Keyword(s):

Ferromagnetic Metal ◽

Metal Layers

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ZIRCAR ZIRCONIA POWDER TYPE ZYP-4.5

Alloy Digest ◽

10.31399/asm.ad.cer0001 ◽

1989 ◽

Vol 38 (3) ◽

Keyword(s):

Fracture Toughness ◽

Physical Properties ◽

Yttrium Oxide ◽

Zirconium Oxide ◽

Raw Material ◽

Bend Strength ◽

Powder Metal ◽

Zirconia Powder ◽

Tetragonal Crystal ◽

Powder Type

Abstract ZIRCAR ZIRCONIA POWDER TYPEZYP-4.5 is a highly reactive form of zirconium oxide stabilized in the tetragonal crystal state with added yttrium oxide. It is an excellent raw material for producing dense structural and wear resistant parts. This datasheet provides information on composition, physical properties, microstructure, hardness, elasticity, and bend strength as well as fracture toughness. It also includes information on powder metal forms. Filing Code: Cer-1. Producer or source: Zircar Products Inc..

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Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

ISTFA 2000: Conference Proceedings from the 26th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2000p0407 ◽

2000 ◽

Author(s):

Romain Desplats ◽

Timothee Dargnies ◽

Jean-Christophe Courrege ◽

Philippe Perdu ◽

Jean-Louis Noullet

Keyword(s):

Integrated Circuit ◽

Focused Ion Beam ◽

Ion Beam ◽

Semiconductor Devices ◽

Front Side ◽

Automatic Determination ◽

Metal Line ◽

New Approach ◽

Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

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Application of Fast Laser Deprocessing Techniques in Physical Failure Analysis on SRAM Memory of Advance Technology

ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2014p0268 ◽

2014 ◽

Author(s):

H.H. Yap ◽

P.K. Tan ◽

G.R. Low ◽

M.K. Dawood ◽

H. Feng ◽

...

Keyword(s):

Failure Analysis ◽

Integrated Circuit ◽

Cost Effective ◽

Tetraethyl Orthosilicate ◽

Ic Design ◽

Advance Technology ◽

Defect Identification ◽

Technology Scaling ◽

And Function ◽

Metal Layers

Abstract With technology scaling of semiconductor devices and further growth of the integrated circuit (IC) design and function complexity, it is necessary to increase the number of transistors in IC’s chip, layer stacks, and process steps. The last few metal layers of Back End Of Line (BEOL) are usually very thick metal lines (>4μm thickness) and protected with hard Silicon Dioxide (SiO2) material that is formed from (TetraEthyl OrthoSilicate) TEOS as Inter-Metal Dielectric (IMD). In order to perform physical failure analysis (PFA) on the logic or memory, the top thick metal layers must be removed. It is time-consuming to deprocess those thick metal and IMD layers using conventional PFA workflows. In this paper, the Fast Laser Deprocessing Technique (FLDT) is proposed to remove the BEOL thick and stubborn metal layers for memory PFA. The proposed FLDT is a cost-effective and quick way to deprocess a sample for defect identification in PFA.

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SRAM Failure Analysis Strategy

ISTFA 2003: Conference Proceedings from the 29th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2003p0177 ◽

2003 ◽

Author(s):

P. Egger ◽

C. Burmer

Keyword(s):

Liquid Crystal ◽

Failure Analysis ◽

The Other ◽

Other Hand ◽

Analysis Strategy ◽

Emission Microscopy ◽

Metal Layers ◽

Failure Localization

Abstract The area of embedded SRAMs in advanced logic ICs is increasing more and more. On the other hand smaller structure sizes and an increasing number of metal layers make conventional failure localization by using emission microscopy or liquid crystal inefficient. In this paper a SRAM failure analysis strategy will be presented independent on layout and technology.

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Effects of Backside Circuit Edit on Transistor Characteristics

ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2007p0029 ◽

2007 ◽

Author(s):

R.K. Jain ◽

T. Malik ◽

T.R. Lundquist ◽

Q.S. Wang ◽

R. Schlangen ◽

...

Keyword(s):

Integrated Circuits ◽

Flip Chip ◽

Intrinsic Parameters ◽

Chip Type ◽

Device Structures ◽

Before And After ◽

Silicon Device ◽

Metal Layers

Abstract Backside circuit edit techniques on integrated circuits (ICs) are becoming common due to increase number of metal layers and flip chip type packaging. However, a thorough study of the effects of these modifications has not been published. This in spite of the fact that the IC engineers have sometimes wondered about the effects of backside circuit edit on IC behavior. The IC industry was well aware that modifications can lead to an alteration of the intrinsic behavior of a circuit after a FIB edit [1]. However, because alterations can be controlled [2], they have not stopped the IC industry from using the FIB to successfully reconfigure ICs to produce working “silicon” to prove design and mask changes. Reliability of silicon device structures, transistors and diodes, are investigated by monitoring intrinsic parameters before and after various steps of modification.

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Failure Analysis of Short Faults on Advanced Wire-Bond and Flip-Chip Packages with Scanning SQUID Microscopy

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0073 ◽

2004 ◽

Author(s):

Steve K. Hsiung ◽

Kevan V. Tan ◽

Andrew J. Komrowski ◽

Daniel J. D. Sullivan ◽

Jan Gaudestad

Keyword(s):

Magnetic Fields ◽

Integrated Circuits ◽

Quantum Interference ◽

Flip Chip ◽

Infrared Emission ◽

Fault Analysis ◽

Wire Bond ◽

Overlay Design ◽

Scanning Squid ◽

Metal Layers

Abstract Scanning SQUID (Superconducting Quantum Interference Device) Microscopy, known as SSM, is a non-destructive technique that detects magnetic fields in Integrated Circuits (IC). The magnetic field, when converted to current density via Fast Fourier Transform (FFT), is particularly useful to detect shorts and high resistance (HR) defects. A short between two wires or layers will cause the current to diverge from the path the designer intended. An analyst can see where the current is not matching the design, thereby easily localizing the fault. Many defects occur between or under metal layers that make it impossible using visible light or infrared emission detecting equipment to locate the defect. SSM is the only tool that can detect signals from defects under metal layers, since magnetic fields are not affected by them. New analysis software makes it possible for the analyst to overlay design layouts, such as CAD Knights, directly onto the current paths found by the SSM. In this paper, we present four case studies where SSM successfully localized short faults in advanced wire-bond and flip-chip packages after other fault analysis methods failed to locate the defects.

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