Post-Amplifier Design

2007 ◽  
pp. 107-131
Author(s):  
Carolien Hermans ◽  
Michiel Steyaert
Keyword(s):  
Amplifier Design

Practical Considerations for the CW Power Amplifier Design for Lower Hybrid Frequency Applications

2020 ◽  
Author(s):  
Sandeep R. Sainkar ◽  
Alice N. Cheeran ◽  
Gajendrakumar Shinde ◽  
Promod K. Sharma ◽  
Harish V. Dixit
Keyword(s):  
Power Amplifier ◽  
Lower Hybrid ◽  
Hybrid Frequency ◽  
Amplifier Design

scholarly journals The Ka-band high power klystron amplifier design program of INFN

Vacuum ◽  
2021 ◽  
pp. 110377
Author(s):  
M. Behtouei ◽  
B. Spataro ◽  
F. Di Paolo ◽  
A. Leggieri
Keyword(s):  
High Power ◽  
Ka Band ◽  
Design Program ◽  
Amplifier Design

Two-stage amplifier design based on experimental Line-Tunnel FET data

2019 ◽  
Author(s):  
Walter Goncalez Filho ◽  
Joao A. Martino ◽  
Roberto Rangel ◽  
Paula G. D. Agopian ◽  
Eddy Simoen ◽  
...  
Keyword(s):  
Two Stage ◽  
Tunnel Fet ◽  
Experimental Line ◽  
Amplifier Design

scholarly journals Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 263
Author(s):  
Roberto Quaglia
Keyword(s):  
Power Amplifier ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Large Signal ◽  
Signal Model ◽  
Or Efficiency ◽  
Summary Table ◽  
Matching Networks ◽  
Amplifier Design ◽  
Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

Highly Efficient and Linear Class E SiGe Power Amplifier Design

2006 ◽  
Author(s):  
Donald Lie ◽  
Jeremy Popp ◽  
Jason Rowland ◽  
Annie Yang ◽  
Feipeng Wang ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Highly Efficient ◽  
Amplifier Design ◽  
Class E
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