Analytical Approach on the Scale Length Model for Tri-material Surrounding Gate Tunnel Field-Effect Transistors (TMSG-TFETs)

2015 ◽  
pp. 231-238
Author(s):  
P. Vanitha ◽  
G. Lakshmi Priya ◽  
N. B. Balamurugan ◽  
S. Theodore Chandra ◽  
S. Manikandan
Keyword(s):  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Surrounding Gate ◽  
Scale Length

A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors

2019 ◽  
Vol 216 ◽  
pp. 111086
Author(s):  
Fatimah Arofiati Noor ◽  
Christoforus Bimo ◽  
Ibnu Syuhada ◽  
Toto Winata ◽  
Khairurrijal Khairurrijal
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Compact Model ◽  
Oxide Semiconductor ◽  
Surrounding Gate ◽  
Gate Tunneling ◽  
Tunneling Currents

Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

2012 ◽  
Vol 101 (25) ◽  
pp. 253511 ◽  
Author(s):  
Y. G. Xiao ◽  
Z. J. Chen ◽  
M. H. Tang ◽  
Z. H. Tang ◽  
S. A. Yan ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Negative Capacitance ◽  
Electrical Characteristics ◽  
Surrounding Gate

scholarly journals An approach to model and optimization of manufacturing of an enhanced swing differential Colpitts oscillator. on influence of miss-match induced stress

2020 ◽  
Vol 12 (02) ◽  
pp. 12-32
Author(s):  
E.L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Colpitts Oscillator ◽  
Induced Stress ◽  
Specific Configuration

In this paper we introduce an approach to increase density of field-effect transistors framework an enhanced swing differential Colpitts oscillator. Framework the approach we consider manufacturing the oscillator in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress

scholarly journals On Model of Manufacturing of an Integrated Circuits Based on Hetero-Structures Under Influence of Mismatch-Induced Stress and Porosity of Materials

2021 ◽  
Vol 23 (1) ◽  
pp. 1-53
Author(s):  
E. L. Pankratov ◽  
Keyword(s):  
Integrated Circuits ◽  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Radiation Defects ◽  
Induced Stress ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework a downconversion mixer circuit. Framework the approach we consider manufacturing the mixer in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should be annealed by framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

scholarly journals Comparative Analysis of Different Figures of Merit for Algan/Gan and Si Surrounding-Gate Field Effect Transistors (SG-Fets)

2021 ◽  
Author(s):  
Yogesh Kumar Verma ◽  
Varun Mishra ◽  
Manoj Singh Adhikari ◽  
Dharam Buddhi ◽  
Santosh Kumar Gupta
Keyword(s):  
Power Dissipation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Height ◽  
High Electron ◽  
Current Output ◽  
Dynamic Power ◽  
Figures Of Merit ◽  
Surrounding Gate ◽  
Intrinsic Gain

Abstract The combination of better transport properties of III-V group semiconductors along with excellent electrostatic control of surrounding gate is a promising option for the future low power electronics. Accordingly in this brief, the major figures of merit (FOM) including output current, output conductance (gd), transconductance generation factor (TGF), intrinsic gain (dB), and dynamic power dissipation are computed for surrounding-gate field effect transistors (SG-FETs) considering III-V group semiconductors and Si channel material respectively with respect to different device parameters. It is noticed that the center potential is higher in AlGaN/GaN SG-FET than Si for different values of channel length (CL), channel height (H), oxide thickness (tox), and doping concentration (Nd). The AlGaN/GaN SG-FET provides lower gd than Si for different values of CL, H, tox, and Nd as required for MOS analog circuits to achieve higher gain. The peak value of TGF and intrinsic gain is higher in AlGaN/GaN than Si SG-FET for different values of CL, H, tox, and Nd. In this work, we have analyzed the MOSFET structure for normally off operation of AlGaN/GaN high electron mobility transistors (HEMTs) to reduce dynamic power dissipation (PD). The magnitude of PD is calculated to be lower in normally off AlGaN/GaN SG-FET than Si for different values of CL, H, and tox.

Increasing the Density of Field-Effect Heterotransistors in an Amplifier Flipped Voltage Follower Mirrors with Account of Miss-Match Induced Stress

2021 ◽  
Vol 8 (1) ◽  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Analytical Approach ◽  
Field Effect Transistors ◽  
Current Mode ◽  
Instrumentation Amplifier ◽  
Flipped Voltage Follower ◽  
Induced Stress ◽  
Voltage Follower ◽  
Specific Configuration

In this paper, we introduce an approach to increase density of field-effect transistors framework current mode instrumentation amplifier flipped voltage follower mirrors. The approach we consider for manufacturing of the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease the value of mismatch-induced stress in the considered heterostructure. We also introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.

Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors

2012 ◽  
Vol 112 (8) ◽  
pp. 084512 ◽  
Author(s):  
E. G. Marin ◽  
F. G. Ruiz ◽  
I. M. Tienda-Luna ◽  
A. Godoy ◽  
P. Sánchez-Moreno ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Model ◽  
Surrounding Gate ◽  
Analytic Potential
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