HSO Algorithm for RRAP Problem in Three-State Device Network

2020 ◽  
pp. 23-33
Author(s):  
Dongkui Li
Keyword(s):  
State Device

scholarly journals Thermoelectric Properties of Carbon Nanotubes

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4561 ◽  
Author(s):  
Nguyen T. Hung ◽  
Ahmad R. T. Nugraha ◽  
Riichiro Saito
Keyword(s):  
Carbon Nanotubes ◽  
Figure Of Merit ◽  
Waste Heat ◽  
Quantum Confinement Effect ◽  
Electrical Energy ◽  
High Seebeck Coefficient ◽  
Te Material ◽  
P Type ◽  
State Device ◽  
Solid State Device

Thermoelectric (TE) material is a class of materials that can convert heat to electrical energy directly in a solid-state-device without any moving parts and that is environmentally friendly. The study and development of TE materials have grown quickly in the past decade. However, their development goes slowly by the lack of cheap TE materials with high Seebeck coefficient and good electrical conductivity. Carbon nanotubes (CNTs) are particularly attractive as TE materials because of at least three reasons: (1) CNTs possess various band gaps depending on their structure, (2) CNTs represent unique one-dimensional carbon materials which naturally satisfies the conditions of quantum confinement effect to enhance the TE efficiency and (3) CNTs provide us with a platform for developing lightweight and flexible TE devices due to their mechanical properties. The TE power factor is reported to reach 700–1000 W / m K 2 for both p-type and n-type CNTs when purified to contain only doped semiconducting CNT species. Therefore, CNTs are promising for a variety of TE applications in which the heat source is unlimited, such as waste heat or solar heat although their figure of merit Z T is still modest (0.05 at 300 K). In this paper, we review in detail from the basic concept of TE field to the fundamental TE properties of CNTs, as well as their applications. Furthermore, the strategies are discussed to improve the TE properties of CNTs. Finally, we give our perspectives on the tremendous potential of CNTs-based TE materials and composites.

Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior

2008 ◽  
Vol 1108 ◽  
Author(s):  
Faquir C. Jain ◽  
Mukesh Gogna ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
Ernesto Suarez ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Voltage ◽  
Intermediate State ◽  
Gate Voltage ◽  
Inversion Layer ◽  
Similar Increase ◽  
State Behavior ◽  
Charge Neutralization ◽  
Ge Quantum Dot ◽  
State Device

AbstractThis paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.

Carrier Concentrations and Drift Currents in the Depletion Region of a p–n Junction

2003 ◽  
Vol 10 (04) ◽  
pp. 649-660
Author(s):  
D. K. Mak
Keyword(s):  
Solid State ◽  
Applied Voltage ◽  
Local Minimum ◽  
Local Maximum ◽  
Depletion Region ◽  
Electron Drift ◽  
Electron Carrier ◽  
Quantitative Explanation ◽  
State Device ◽  
Solid State Device

It has always been stated in electronics, semiconductor and solid state device textbooks that the hole drift and electron drift currents in the depletion region of a p–n junction are constant and independent of applied voltage (biasing). However, the explanations given are qualitative and unclear. We extrapolate the existing analytic theory of a p–n junction to give a quantitative explanation of why the currents are constant. We have also shown that the carrier concentrations in the depletion region, as depicted in some of the textbooks, are incorrect, and need to be revised. Our calculations further demonstrate that in reverse biasing, both hole and electron carrier concentrations each experience a local maximum and a local minimum, indicating that their diffusion currents change directions twice within the depletion region.

A high performance solid state asymmetric supercapacitor device based upon NiCo2O4nanosheets//MnO2microspheres

RSC Advances ◽  
2016 ◽  
Vol 6 (74) ◽  
pp. 70292-70302 ◽  
Author(s):  
Syed Khalid ◽  
Chuanbao Cao ◽  
Lin Wang ◽  
Youqi Zhu ◽  
Yu Wu
Keyword(s):  
Solid State ◽  
Energy Density ◽  
Power Density ◽  
High Performance ◽  
Asymmetric Supercapacitor ◽  
State Device ◽  
Solid State Device

The volumetric energy density and power density of a novel solid state device (NiCo2O4//MnO2) are much higher than most reported devices.

scholarly journals A Solid State Pyranometer

2015 ◽  
Vol 58 (1) ◽  
pp. 56-63
Author(s):  
Anca Laura Dumitrescu ◽  
Marius Paulescu ◽  
Aurel Ercuta
Keyword(s):  
Solid State ◽  
Voltage Drop ◽  
External Surface ◽  
Incident Radiation ◽  
Transfer Coefficients ◽  
Heat Transfer Coefficients ◽  
Analog Electronics ◽  
Two Bodies ◽  
State Device ◽  
Solid State Device

Abstract The construction of a solid state device-based pyranometer designated to broadband irradiance measurements is presented in this paper. The device is built on the physical basis that the temperature difference between two bodies of identical shape and external surface area, identically exposed to the incident radiation, but having different absorption and heat transfer coefficients (e.g. one body is painted white and the other is painted black), is proportional to the incident irradiance. This proportionality may be put in evidence if the two bodies consisting of identical arrays of correspondingly painted semiconductor diodes, due to the thermal behaviour of their p-n junction. It is theoretically predicted and experimentally confirmed that the voltage drop across a diode passed through a constant forward current linearly decreases with the temperature of the junction. In other words, a signal proportional to the irradiance of the light source may be obtained via conventional analog electronics. The calibration of the apparatus, as performed by means of a professional device (LP PYRA 03), indicates a good linearity.

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