Refractive Index and Dielectric Constant Evaluation of RF Sputtered Few Layer MoS2 Thin Film

2019 ◽  
pp. 647-654
Author(s):  
Richa Singh ◽  
Shweta Tripathi
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Refractive Index

Determining the refractive index and the dielectric constant of PPDT2FBT thin film using spectroscopic ellipsometry

2020 ◽  
Vol 110 ◽  
pp. 110445
Author(s):  
Chandan Howlader ◽  
Mehedhi Hasan ◽  
Alex Zakhidov ◽  
Maggie Yihong Chen
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Spectroscopic Ellipsometry

HIGH RESISTANCE ANODIC OXIDE FILMS ON ALUMINIUM

1966 ◽  
Vol 44 (20) ◽  
pp. 2409-2413 ◽  
Author(s):  
A. C. Harkness ◽  
L. Young
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Steady State ◽  
Oxide Films ◽  
Ionic Current ◽  
Anodic Oxide ◽  
Immersion Method ◽  
State Ionic

The thicknesses of oxide films formed in aqueous borate solutions were obtained by the spectrophotometric method after developing the interference colors by evaporating a very thin film of gold or bismuth onto the oxide. The refractive index of the stripped films was determined by the Becke immersion method as 1.57 to 1.58 at 5 900 Å wavelength. The dielectric constant was estimated as 9.8 ± 0.5. Experimental data on the steady state ionic current density, I, through the oxide as a function of the field strength, E, in the oxide could be represented by I = I0 exp −(W − qaE)/kT where I0 = 2.24 × 107 A cm−2, W = 1.3 ± 0.15 eV, q = 3e, a = 2.95 ± 0.15 Å.

Synthesis of MgO Thin Film Deposited on Soda Lime Glass by Sol-Gel Process

2008 ◽  
Vol 569 ◽  
pp. 61-64
Author(s):  
Dae Yong Shin ◽  
Kyung Nam Kim
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Heating Temperature ◽  
Sol Gel ◽  
Soda Lime ◽  
Dissipation Factor ◽  
Preferred Orientation ◽  
Soda Lime Glass ◽  
Sol Gel Process

MgO thin film was deposited on soda lime glass substrate by sol-gel process. MgO thin film with the (200) preferred orientation were prepared by heat-treated at 300~500°C for 10 min. The crystallization, microstructure and electrical properties with various parameters of MgO thin films were investigated. Consequently, it was shows that the (200) preferred orientation of MgO thin film could be obtained as the heating temperature was increased. At heating temperature of 500°C, MgO thin film was composed of columnar crystals with a size of 120 nm. The dielectric constant of the (200) preferred orientation of MgO thin film at 1 kHz without the electric field was 7.2, with a dissipation factor of 4%. When the electric field was increased, the dielectric constant approaches to 7.9 with the dissipation factor of 2.1%. The refractive index of MgO thin film depended on the film thickness. The refractive index of 250 nm thickness was 1.70.

Thickness Dependent Optical Properties of WO3 Thin Film using Surface Plasmon Resonance

2013 ◽  
Vol 1494 ◽  
pp. 233-238
Author(s):  
Ayushi Paliwal ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Refractive Index ◽  
Surface Plasmon Resonance ◽  
Surface Plasmon ◽  
Plasmon Resonance ◽  
Rf Magnetron Sputtering ◽  
Complex Dielectric Constant ◽  
Thin Film Thickness ◽  
Bilayer Films

ABSTRACTThe effect of tungsten oxide (WO3) thin film thickness on the surface plasmon resonance (SPR) properties have been investigated. WO3 films of varying the thickness (36 nm, 60 nm, 80 nm, 100 nm, 150 nm and 200nm) have been deposited onto Au coated prism (Au/prism) by radio frequency (RF) magnetron sputtering technique. The SPR responses of bilayer films were fitted with the Fresnel’s equations in order to calculate the dielectric constant of WO3 thin film. The variation of complex dielectric constant and refractive index with the thickness of WO3 thin film was studied.

scholarly journals Strain-Induced Increase of Dielectric Constant in EuO Thin Film

2019 ◽  
Vol 6 (10) ◽  
pp. 106321 ◽  
Author(s):  
Alireza Kashir ◽  
Hyeon-Woo Jeong ◽  
Woochan Jung ◽  
Yoon Hee Jeong ◽  
Gil-Ho Lee
Keyword(s):  
Thin Film ◽  
Dielectric Constant

scholarly journals Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films

Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 112
Author(s):  
Qais M. Al-Bataineh ◽  
Mahmoud Telfah ◽  
Ahmad A. Ahmad ◽  
Ahmad M. Alsaad ◽  
Issam A. Qattan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Mixed Oxide ◽  
Visible Region ◽  
Functional Materials ◽  
Crystal Defects ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Pure Ceo2

We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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