Strain-Induced Increase of Dielectric Constant in EuO Thin Film

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

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A new GaAs MMIC process technology using 0.5 mu m gate asymmetric LDD structure GaAs BP-MESFETs combined with high-dielectric-constant thin-film capacitors

Semiconductor Science and Technology ◽

10.1088/0268-1242/10/11/017 ◽

1995 ◽

Vol 10 (11) ◽

pp. 1534-1540 ◽

Cited By ~ 7

Author(s):

M Nishitsuji ◽

T Uda ◽

T Yokoyama ◽

K Fujimoto ◽

K Nishii ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

High Dielectric Constant ◽

Process Technology ◽

Thin Film Capacitors ◽

High Dielectric

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Investigation of Dead Layer Thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au Thin Film Capacitors

MRS Proceedings ◽

10.1557/proc-655-cc3.2.1 ◽

2000 ◽

Vol 655 ◽

Cited By ~ 4

Author(s):

L. J. Sinnamon ◽

R. M. Bowman ◽

J. M. Gregg

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Layer Thickness ◽

Perovskite Phase ◽

Frequency Dispersion ◽

Dead Layer ◽

Parameter Ratio ◽

Thin Film Capacitors ◽

Dead Layer Thickness ◽

The Dead

AbstractThin film capacitors with barium strontium titanate (BST) dielectric layers of 7.5 to 950 nm were fabricated by Pulsed Laser Deposition. XRD and EDX analyses confirmed a strongly oriented BST cubic perovskite phase with the desired cation stoichiometry. Room temperature frequency dispersion (ε100 kHz / ε100 Hz) for all capacitors was greater than 0.75. Absolute values for the dielectric constant were slightly lower than expected. This was attributed to the use of Au top electrodes since the same sample showed up to a threefold increase in dielectric constant when Pt was used in place of Au. Dielectric constant as a function of thicknesses greater than 70 nm, was fitted using the series capacitor model. The large interfacial parameter ratio di / εi of 0.40 ± 0.05 nm implied a significant dead-layer component within the capacitor structure. Modelled consideration of the dielectric behaviour for BST films, whose total thickness was below that of the dead layer, predicted anomalies in the plots of d/ ε against d at the dead layer thickness. For the SRO/BST/Au system studied, no anomaly was observed. Therefore, either (i) 7.5 nm is an upper limit for the total dead layer thickness in this system, or (ii) dielectric collapse is not associated with a distinct interfacial dead layer, and is instead due to a through-film effect.

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Silk Polymer Coating with Low Dielectric Constant and High Thermal Stability for Ulsi Interlayer Dielectric

MRS Proceedings ◽

10.1557/proc-476-9 ◽

1997 ◽

Vol 476 ◽

Cited By ~ 46

Author(s):

P. H. Townsend ◽

S. J. Martin ◽

J. Godschalx ◽

D. R. Romer ◽

D. W. Smith ◽

...

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Glass Transition ◽

Transition Temperature ◽

Glass Transition Temperature ◽

Integrated Circuits ◽

Room Temperature ◽

Polymer Network ◽

Flow Characteristics ◽

Interlayer Dielectric

AbstractA novel polymer has been developed for use as a thin film dielectric in the interconnect structure of high density integrated circuits. The coating is applied to the substrate as an oligomeric solution, SiLK*, using conventional spin coating equipment and produces highly uniform films after curing at 400 °C to 450 °C. The oligomeric solution, with a viscosity of ca. 30 cPs, is readily handled on standard thin film coating equipment. Polymerization does not require a catalyst. There is no water evolved during the polymerization. The resulting polymer network is an aromatic hydrocarbon with an isotropie structure and contains no fluorine.The properties of the cured films are designed to permit integration with current ILD processes. In particular, the rate of weight-loss during isothermal exposures at 450 °C is ca. 0.7 wt.%/hour. The dielectric constant of cured SiLK has been measured at 2.65. The refractive index in both the in-plane and out-of-plane directions is 1.63. The flow characteristics of SiLK lead to broad topographic planarization and permit the filling of gaps at least as narrow as 0.1 μm. The glass transition temperature for the fully cured film is greater than 490 °C. The coefficient of thermal expansivity is 66 ppm/°C below the glass transition temperature. The stress in fully cured films on Si wafers is ca. 60 MPa at room temperature. The fracture toughness measured on thin films is 0.62 MPa m ½. Thin coatings absorb less than 0.25 wt.% water when exposed to 80% relative humidity at room temperature.

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KARAKTERISASI KAPASITOR BARIUM STRONTIUM TITANAT (BST) Ba0,75 Sr0,25 TiO3 , YANG DIBUAT MENGGUNAKAN METODE SOL-GEL

Komunikasi Fisika Indonesia ◽

10.31258/jkfi.16.1.65-69 ◽

2019 ◽

Vol 16 (1) ◽

pp. 65

Author(s):

Rahmi Dewi ◽

Tiara Pertiwi ◽

Krisman Krisman

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Dielectric Constant ◽

Impedance Spectroscopy ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Sol Gel ◽

Barium Strontium ◽

Scanning Electron

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.

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Impact of process conditions on chemical solution deposited BNKT thin film electromechanical properties

SN Applied Sciences ◽

10.1007/s42452-021-04692-4 ◽

2021 ◽

Vol 3 (10) ◽

Author(s):

Kyle M. Grove ◽

Austin Fox ◽

David P. Cann ◽

Song Won Ko ◽

Peter Mardilovich ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Constant ◽

Dielectric Loss ◽

Pyrolysis Temperature ◽

Piezoelectric Response ◽

Excess Properties ◽

Process Conditions ◽

Chemical Solution ◽

Ramp Rate

Abstract Phase pure perovskite (1-x)Bi1/2Na1/2TiO3 – xBi1/2K1/2TiO3 (BNKT) thin films were successfully prepared via an inverse mixing order chemical solution deposition method and the impact of process conditions on film properties were observed. Process conditions evaluated included crystallization temperature and time, ramp rate, pyrolysis temperature, and cation excess. Properties measured included crystal structure, dielectric constant, dielectric loss, piezoelectric response, and ferroelectric response. A few notable trends were observed. A subtle impact on piezoelectric response was observed in films prepared using different ramp rates: 100 C per second films (d33,f = 60 ± 5 pm/V at 1 kHz), 75 °C per second films (d33,f = 55 ± 5 pm/V) and 150 C per second films (d33,f = 50 ± 5 pm/V). Films prepared using a 75 °C per second ramp rate displayed slightly higher dielectric loss (tan δ = 0.09 at 1 kHz) than films prepared using a 100 °C per second ramp rate (tan δ = 0.07 at 1 kHz) or 150 °C per second ramp rate (tan δ = 0.05 at 1 kHz). Pyrolysis temperatures greater than 350 °C are necessary to burn off organics and maximize film dielectric constant. Dielectric constant increased from 450 ± 50 at 1 kHz to 600 ± 50 at 1 kHz by increasing pyrolysis temperature from 300 to 400 °C. Excess cation amounts (for compositional control) were also evaluated and it was found films with higher amounts of Na and K excess compared to bismuth excess displayed an increase in d33,f of about 10 pm/V compared to films prepared with equivalent Bi and Na and K excess amounts. Article highlights Impact of processing conditions on inverse mixing order chemical solution deposited bismuth based thin films. Dielectric, piezoelectric, and ferroelectric properties of thin film bismuth sodium titanate-bismuth potassium titanate thin films. Developing lead-free piezoelectric actuator materials.

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Pyroelectric Properties of the Plt(10) Thin Film on the P-Doped Poly Silicon

MRS Proceedings ◽

10.1557/proc-433-413 ◽

1996 ◽

Vol 433 ◽

Author(s):

Seong Jun Kang ◽

Yung Sup Yoon ◽

Dong Il Kim

Keyword(s):

Thin Film ◽

Dielectric Constant ◽

Curie Temperature ◽

Room Temperature ◽

Sol Gel ◽

Pyroelectric Coefficient ◽

Pyroelectric Properties ◽

Gel Method ◽

Sol Gel Method ◽

Poly Silicon

AbstractWe have studied the pyroelectric properties of the PLT(10) thin film deposited on a p-doped poly-Si electrode by using the sol-gel method. Measurement of the dielectric constant as a function of temperature shows the typical characteristics of a ferroelectric. The dielectric constant reaches a maximum at 295°C, which can be thought of as the Curie temperature. The PLT(10) thin film on p-doped poly-Si fabricated in this research shows excellent pyroelectric properties. The pyroelectric coefficient and the fiqures of merit, Fv and FD at room temperature are measured as 5.76 × 10−8 C/cm2 °C, 1.17 × 10−10C-cm/J and 0.93 × 10−8C-cm/J, respectively.

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