Optical quality GaInAs grown by molecular beam epitaxy

1982 ◽  
Vol 11 (2) ◽  
pp. 435-440 ◽  
Author(s):  
G. Wicks ◽  
C. E. C. Wood ◽  
H. Ohno ◽  
L. F. Eastman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Plasma-assisted Molecular Beam Epitaxy of High Optical Quality MgZnO Films on Zn-polar ZnO Substrates

2008 ◽  
Vol 1 ◽  
pp. 091202 ◽  
Author(s):  
Yoshio Nishimoto ◽  
Ken Nakahara ◽  
Daiju Takamizu ◽  
Atsushi Sasaki ◽  
Kentaro Tamura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
High Optical Quality

Structural and Optical Properties of Self-Assembled Epitaxially Grown GaN Nanorods and Nanoporous Film on Sapphire (0001) Using Laser Molecular Beam Epitaxy

2020 ◽  
Vol 20 (6) ◽  
pp. 3839-3844 ◽  
Author(s):  
Ch. Ramesh ◽  
P. Tyagi ◽  
M. Senthil Kumar ◽  
Sunil S. Kushvaha
Keyword(s):  
Molecular Beam Epitaxy ◽  
Energy Density ◽  
Molecular Beam ◽  
Laser Energy ◽  
Optical Quality ◽  
Biaxial Stress ◽  
Laser Energy Density ◽  
Nanoporous Film ◽  
Band Emission ◽  
Length Width

The GaN nanoporous-film (NPF) and nanorods (NRs) were grown on sapphire (0001) using laserassisted molecular beam epitaxy (LMBE) technique by laser ablating solid GaN target at different laser energy density. The interconnected GaN NPF was grown at low laser energy density of ˜4 J/cm2 whereas vertically aligned GaN NRs was obtained at high laser energy density of ˜7 J/cm2. The pore size of the GaN NPF structure is in range of 40–120 nm. The GaN NRs possess hexagonal shape with six sidewall facets and truncated top facet. The length, width and density of GaN NRs are 600–900 nm, 150–250 nm and ˜2.5×107 cm−2, respectively. The X-ray rocking curve full width at half maximum values along GaN (0002) and (1012) planes for GaN NRs obtained to be 0.41 and 0.53°, respectively. The biaxial stress in hetero-epitaxially grown GaN was investigated with Raman spectroscopy and it was found that GaN NRs possesses a very low in-plane compressive biaxial stress of 0.09 GPa. The photoluminescence study exhibits a sharp band-to-band emission at 3.4 eV with a peak line width of 140 meV, signifying the good optical quality of the LMBE grown GaN NRs on sapphire (0001).

Surfactant-Mediated Growth of Aigaas by Molecular Beam Epitaxy

1995 ◽  
Vol 379 ◽  
Author(s):  
Ron Kaspi ◽  
Keith R. Evans ◽  
Don C. Reynolds ◽  
Jeff Brown ◽  
Marek Skowronski
Keyword(s):  
Surface Roughness ◽  
Steady State ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Optical Quality ◽  
Growth Surface ◽  
High Energy Electron ◽  
Extended Reflection

ABSTRACTAntimony was used as a surfactant during solid-source molecular beam epitaxy of AIGaAs layers. A steady-state surface-segregated population of Sb was maintained at the AIGaAs growth surface by providing a continuous Sb2 flux to compensate for loss due to thermal desorption. Above ∼ 650 °C, the incorporation rate of Sb was negligible, thereby allowing the deposition of AlGaAs layers despite the presence of Sb at the surface. A significant improvement in the optical quality of Al0.24Ga0 76As layers was observed by photoluminescence. In addition, extended reflection high energy electron diffraction oscillations and a reduction in Al0.24Ga0.76As surface roughness was observed when Sb was employed as a surfactant.

High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy

2008 ◽  
Vol 1068 ◽  
Author(s):  
Agam Prakash Vajpeyi ◽  
G. Tsiakatouras ◽  
A Adikimenakis ◽  
K. Tsagaraki ◽  
M Androulidaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
High Surface ◽  
Thermal Strain ◽  
Average Diameter ◽  
Optical Quality ◽  
Average Height ◽  
High Optical Quality ◽  
Mismatch Strain

ABSTRACTThe spontaneous growth of GaN nanopillars on (111) Si by plasma assisted molecular beam epitaxy has been investigated. The growth of GaN nanopillars on Si is driven by the lattice mismatch strain energy on Si and the high surface energy of the nitrogen stabilized (0001) GaN surface. A higher growth rate of nanopillars compared to a compact GaN film suggests the diffusion of Ga atoms from the uncovered substrate areas to the nucleated GaN nanopillars. The GaN nanopillars were characterized by field-emission scanning electron microscopy (FE-SEM), photoluminescence, and micro Raman spectroscopy. SEM image revealed that average diameter of GaN nanopillars was in the range of 70-100nm and an average height of 600nm. The photoluminescence (PL) spectra indicate the good emission property of the nanopillars. The low temperate PL spectrum exhibited an emission peak at 3.428eV besides a sharp excitonic peak. PL and Raman spectra indicate that GaN nanopillars are fully relaxed from lattice and thermal strain.

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