Surface modifications due to strain relaxation in lattice-mismatched heteroepitaxy

2007 ◽  
pp. 277-302
Author(s):  
Gunther Springholz
Keyword(s):  
Strain Relaxation ◽  
Surface Modifications ◽  
Mismatched Heteroepitaxy

How are Mismatched Systems Ruled by the Wedding Between Surfaces and Strains? Two Examples

1997 ◽  
Vol 11 (31) ◽  
pp. 3673-3689
Author(s):  
C. Priester
Keyword(s):  
Surface Tension ◽  
Quantum Dots ◽  
Quantum Well ◽  
Strain Distribution ◽  
Strain Relaxation ◽  
Self Assembled ◽  
Strained Quantum Well ◽  
Mismatched Heteroepitaxy

In mismatched heteroepitaxy, the two main leading parameters are strain relaxation and surface tension. We emphasize the role of surfaces in two cases: nucleation of self assembled quantum dots in highly mismatched heteroepitaxy and strain distribution in a strained quantum well deposited on the cleaved edge of a strained superlattice.

Control of threading dislocations in lattice-mismatched heteroepitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
L.J. Schowalter ◽  
A.P. Taylor ◽  
J. Petruzzello ◽  
J. Gaines ◽  
D. Olego
Keyword(s):  
Misfit Dislocation ◽  
Gaas Substrate ◽  
Strain Relaxation ◽  
Threading Dislocations ◽  
Practical Applications ◽  
Gaas Substrates ◽  
Mismatched Heteroepitaxy ◽  
Matched Layers ◽  
Heteroepitaxial Layers ◽  
Lattice Matched

ABSTRACTIt is generally observed that strain relaxation, which occurs by misfit dislocation formation, in lattice-mismatched heteroepitaxial layers is accompanied by the formation of threading dislocations. However, our group and others have observed that strain-relaxed epitaxial layers of In1−xGaxAs on GaAs substrates can be grown without the formation of threading dislocations in the epitaxial layer. We have been able to grow strain-relaxed layers up to 13% In concentration without observable densities of threading dislocations in the epilayer but do observe a large number of dislocations pushed into the GaAs substrate. The ability to grow strain-relaxed, lattice-mismatched heteroepitaxial layers has important practical applications. We have succeeded in growing dislocation-free layers of ZnSe on appropriately lattice-matched layers of In1−xGaxAs.

Bronchial stereocilia in the immotile cilia syndrome: A case report

1984 ◽  
Vol 42 ◽  
pp. 52-53
Author(s):  
George Price ◽  
Lizardo Cerezo
Keyword(s):  
Surface Modifications ◽  
Respiratory Epithelium ◽  
Immotile Cilia ◽  
Kartagener's Syndrome ◽  
Membrane Blebs ◽  
Radial Spokes ◽  
Males And Females ◽  
Dynein Arms ◽  
Ultrastructural Finding ◽  
Ultrastructural Findings

Ultrastructural defects of ciliary structure have been known to cause recurrent sino-respiratory infection concurrent with Kartagener's syndrome. (1,2,3) These defects are also known to cause infertility in both males and females. (4) Overall, the defects are defined as the Immotile, or Dyskinetic Cilia Syndrome (DCS). Several ultrastructural findings have been described, including decreased number of cilia, multidirection orientation, fused and compound cilia, membrane blebs, excess matrix in the axoneme, missing outer tubular doublets, translocated doublets, defective radial spokes and dynein arms. A rare but noteworthy ultrastructural finding in DCS is the predominance of microvilli-like structures on the luminal surface of the respiratory epithelium. (5,6) These permanent surface modifications of the apical respiratory epithelium no longer resemble cilia but reflect the ultrastructure of stereocilia, similar to that found in the epidydimal epithelium. Like microvilli, stereocilia are devoid of microtubular ultrastructure in comparison with true cilia.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Antithrombogenic surface modifications in xenogenic pericardial vascular grafts: Initial in-vivo evaluation

2011 ◽  
Vol 59 (S 01) ◽  
Author(s):  
J Linneweber ◽  
F Voss ◽  
P Dohmen ◽  
W Erdbrügger ◽  
W Konertz
Keyword(s):  
Vascular Grafts ◽  
Surface Modifications ◽  
In Vivo Evaluation

Argon Plasma Induced Surface Modifications For Resistless Patterning Of Aluminium Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Neeta Agrawal ◽  
R. D. Tarey ◽  
K. L. Chopra
Keyword(s):  
Etch Rate ◽  
Argon Plasma ◽  
Surface Modifications ◽  
Surface Chemical ◽  
Plasma Exposure ◽  
X Ray ◽  
Aluminium Fluoride ◽  
A New Technique ◽  
Plasma Exposure Time ◽  
Surface Chemical Modification

ABSTRACTArgon plasma exposure has been used to induce surface chemical modification of aluminium thin films, causing a drastic change in etch rate in standard HNO3/CH3COOH/H3PO4 etchant. The inhibition period was found to increase with power and Ar plasma exposure time. Auger electron and x-ray photoelectron spectroscopies have indicated formation of an aluminium fluoride (AlF3) surface layer due to fluorine contamination originating from the residue left in the plasma chamber during CF4 processing. The high etch selectivity between unexposed and argon plasma exposed regions has been exploited as a new technique for resistless patterning of aluminium.

Sign in / Sign up

Export Citation Format

Share Document