The study of forming gas plasma on HSG-7000 silsesquioxane-based low-k dielectric film using X-ray photoelectron spectroscopy

2006 ◽  
Vol 17 (8) ◽  
pp. 607-614 ◽  
Author(s):  
K. C. Aw ◽  
N. T. Salim ◽  
W. Gao ◽  
Z. Li
Keyword(s):  
Photoelectron Spectroscopy ◽  
Dielectric Film ◽  
X Ray ◽  
Gas Plasma ◽  
Low K

scholarly journals Mixed H2O/H2 Plasma-Induced Redox Reactions of Thin Uranium Oxide Films under UHV Conditions

2021 ◽  
Author(s):  
Ghada El Jamal ◽  
Thomas Gouder ◽  
Rachel Eloirdi ◽  
Evgenia Tereshina-Chitrova ◽  
Lukáš Horák ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Redox Reactions ◽  
Uranium Oxide ◽  
Oxide Films ◽  
X Ray ◽  
Gas Plasma

X-Ray Photoelectron Spectroscopy (XPS) has been used to study the effect of mixed H2O/H2 gas plasma on the surface of UO2, U2O5 and UO3 thin films at 400 °C. The...

CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-K Interlayer Dielectrics

2005 ◽  
Vol 863 ◽  
Author(s):  
P. Ryan Fitzpatrick ◽  
Sri Satyanarayana ◽  
Yangming Sun ◽  
John M. White ◽  
John G. Ekerdt
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
K Value ◽  
X Ray ◽  
Dimethylamine Borane ◽  
The Stability ◽  
Low K ◽  
Secondary Ion ◽  
Sims Depth Profiling

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.

Corrosion Phenomena on the Grain Boundary of AlCu FIlms After Plasma Etching

1997 ◽  
Vol 473 ◽  
Author(s):  
C. L. Kim ◽  
K. H. Kwon ◽  
S. J. Yu ◽  
H. J. Kim ◽  
E. G. Chang
Keyword(s):  
Grain Boundary ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray ◽  
Gas Plasma ◽  
Point Analysis ◽  
Selective Corrosion ◽  
Scanning Electron

ABSTRACTThe effect of grain boundary on the corrosion of Al(Cu 1%) etched using SiCl4/Cl2/He/CHF3 gas plasma has been evaluated with XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscopy) and AES (Auger electron spectroscopy). It was found with SEM that the surface of Al(Cu 1 %) mainly corroded at the grain boundary. Using AES point analysis, the cause of selective corrosion at the grain boundary of Al(Cu 1 %) has been investigated. The results of AES indicated that the contents of F and Cl have made a difference at the analyzed positions. This seems to result from the imperfect crystalline structure of Al(Cu 1%) grain boundary. It was also confirmed that F has passivated the Cl at the grain boundary. The SEM and XPS results implied that Cl incorporated in the grain boundary of polycrystalline Al(Cu 1%) film accelerated the corrosion and could not be easily removed by the subsequent SF6 plasma treatment.

A novel low k thin film based on plasma-polymerized 1- cyano isoquinoline

e-Polymers ◽  
2007 ◽  
Vol 7 (1) ◽  
Author(s):  
Zhao Xiong-Yan ◽  
Wang Ming-Zhu ◽  
Wang Zhi
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Film Formation ◽  
Ring Structure ◽  
Discharge Power ◽  
Low Dielectric Constant ◽  
X Ray ◽  
Low Dielectric ◽  
First Time ◽  
Low K

AbstractA novel low dielectric constant polymer, plasma-polymerized 1-cyano isoquinoline (PPCIQ) was prepared by plasma polymerization for the first time. The structure and surface compositions of the deposited PPCIQ thin films were investigated by Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that a high retention of the aromatic ring structure of the starting monomer in the deposited plasma films is obtained when a low discharge power of 15 W was used during film formation. In the case of higher discharge power of 35 W, more severe monomer molecular fragmentation can be observed. The dielectric properties measurements show that a low dielctric constant of 2.62 can be obtained for PPCIQ thin film deposited at 15 W.

X-ray photoelectron spectroscopy investigation of the Schottky barrier at low-k a-SiO(C):H/Cu interfaces

2011 ◽  
Vol 99 (20) ◽  
pp. 202903 ◽  
Author(s):  
S. W. King ◽  
M. French ◽  
M. Jaehnig ◽  
M. Kuhn ◽  
B. French
Keyword(s):  
Schottky Barrier ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Low K

A Pretreatment Technique to Improvement the Ashing Resistance of Low K Spin-On-Polymer (SOP)

1999 ◽  
Vol 565 ◽  
Author(s):  
Kow-Ming Chang ◽  
Ji-Yi Yang ◽  
Yu-Hsun Chang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Plasma ◽  
Thickness Variation ◽  
Gap Filling ◽  
Treatment Technology ◽  
Cross Sectional ◽  
X Ray ◽  
Significant Damage ◽  
Ion Treatment ◽  
Low K

AbstractThe oxygen plasma via resists strip process cause significant damage to organic SOP, thus limiting its inter-level dielectric application. A simple treatment technology using reactive ion is proposed to reform the SOP surface. The reactive ion modification of the SOP can improve the resistance towards oxygen plasma. This is owing to the carbon atom absence in the SOP's surface area. The measurements of Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), stress, thickness variation, Scanning Electron Microscope (SEM) cross-sectional view for gap filling and dielectric constant show that SOP with reactive ion treatment (RIT) has better quality for non-etch-back process than SOP without RIT.

Mechanical Properties and Porosity of Organo-Silicate Glass (OSG) Low-k Dielectric Films

2001 ◽  
Vol 695 ◽  
Author(s):  
J. B. Vella ◽  
Q. Xie ◽  
N. V. Edwards ◽  
J. Kulik ◽  
K. H. Junker
Keyword(s):  
Mechanical Properties ◽  
Photoelectron Spectroscopy ◽  
Elastic Moduli ◽  
Porous Silica ◽  
Material Behavior ◽  
Dielectric Films ◽  
X Ray ◽  
Transmission Electron ◽  
Microelectronics Industry ◽  
Low K

ABSTRACTLow-k material integration issues that plague the microelectronics industry include the compromise in mechanical properties that one incurs in abandoning fully dense silica dieletrics. Typical elastic moduli of OSG low-k dieletric films are 2-10 GPa with corresponding hardnesses of 0.5 to 1.5 GPa. In the present study, the hardness and elastic modulus properties measured by nanoindentation of porous silica based low-k films are correlated with in initial estimates of density using a novel technique of spectroscopic ellispsometry. Transmission electron microscopy and X-ray photoelectron spectroscopy show the structural and chemical similarity of the films. Nanoindentation and spectroscopic ellipsometry results reflect significant deviations in material behavior from that expected from a simple model of silica (SiO2) with included voids or porosity, suggesting that the methyl groups are actively participating in the mechanical and optical properties of the material.

Effect of CH4 Plasma Treatment on O2 Plasma Ashed Organosilicate Low-k Dielectrics

2007 ◽  
Vol 990 ◽  
Author(s):  
Hualiang Shi ◽  
Junjing Bao ◽  
Junjun liu ◽  
Huai Huang ◽  
Paul S. Ho ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Surface Region ◽  
Surface Hydrophobicity ◽  
Moisture Uptake ◽  
Recovery Effect ◽  
X Ray ◽  
Low K

ABSTRACTDuring an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, additional CH4 plasma treatment on the O2 plasma ashed OSG low-k dielectric was investigated using angle resolved x-ray photoelectron spectroscopy (ARXPS), XPS depth profiling, x-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and contact angle goniometer. After CH4 plasma treatment on the O2 plasma ashed OSG, the surface carbon concentration and surface hydrophobicity were partially recovered. A dense surface layer containing C=C bonds was found to have formed on the top of the damaged OSG. The C-V hysteresis and the leakage current were reduced as a result of the CH4 plasma treatment. XPS depth profiling revealed that the recovery effect was limited to the surface region.

One-Step Wet Clean Removal of Post-Etch Fluoropolymer Residues

2012 ◽  
Vol 195 ◽  
pp. 136-138
Author(s):  
William R. Gemmill ◽  
Els Kesters ◽  
Quoc Toan Le
Keyword(s):  
Photoelectron Spectroscopy ◽  
Dielectric Layer ◽  
Checkerboard Pattern ◽  
X Ray ◽  
Plasma Treatments ◽  
One Step ◽  
The One ◽  
Low K

Back end of the line processing requires removal of deposited polymers resulting from etch processes. These polymers typically exist on the whole of the pattern including the dielectric sidewalls and can be removed by wet cleans or a combination of wet cleans and plasma treatments. When a porous dielectric is present these residues cannot be efficiently removed using plasma or certain wet cleans without potentially damaging the underlying porous dielectric layer. Therefore there exists a need for a one-step wet clean that can completely remove the residues without damaging the porous dielectric. Previous work has shown that a combination of a UV pretreatment followed by a wet clean can remove these residues [1]. These residues are composed of CF, -CF2, and CF3 groups as described by X-ray photoelectron spectroscopy (XPS). In an effort to improve the manufacturing viability of such a process we have undertaken a study to develop a one-step wet clean for fluoropolymer removal. Utilizing a blanket checkerboard pattern with a model fluoropolymer deposited on a porous low-κ substrate we have demonstrated the one-step wet clean of the aforementioned fluoropolymer while maintaining compatibility with the pristine and etch processed porous low-k dielectric.

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