Effect of CH4 Plasma Treatment on O2 Plasma Ashed Organosilicate Low-k Dielectrics

2007 ◽  
Vol 990 ◽  
Author(s):  
Hualiang Shi ◽  
Junjing Bao ◽  
Junjun liu ◽  
Huai Huang ◽  
Paul S. Ho ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Surface Region ◽  
Surface Hydrophobicity ◽  
Moisture Uptake ◽  
Recovery Effect ◽  
X Ray ◽  
Low K

ABSTRACTDuring an O2 plasma ashing process, carbon depletion and subsequent moisture uptake caused increase of keff and the leakage current in an organosilicate (OSG) low-k dielectric. For dielectric restoration, additional CH4 plasma treatment on the O2 plasma ashed OSG low-k dielectric was investigated using angle resolved x-ray photoelectron spectroscopy (ARXPS), XPS depth profiling, x-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and contact angle goniometer. After CH4 plasma treatment on the O2 plasma ashed OSG, the surface carbon concentration and surface hydrophobicity were partially recovered. A dense surface layer containing C=C bonds was found to have formed on the top of the damaged OSG. The C-V hysteresis and the leakage current were reduced as a result of the CH4 plasma treatment. XPS depth profiling revealed that the recovery effect was limited to the surface region.

CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-K Interlayer Dielectrics

2005 ◽  
Vol 863 ◽  
Author(s):  
P. Ryan Fitzpatrick ◽  
Sri Satyanarayana ◽  
Yangming Sun ◽  
John M. White ◽  
John G. Ekerdt
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Chemical Vapor ◽  
K Value ◽  
X Ray ◽  
Dimethylamine Borane ◽  
The Stability ◽  
Low K ◽  
Secondary Ion ◽  
Sims Depth Profiling

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.

Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films

2008 ◽  
Vol 1079 ◽  
Author(s):  
Huai Huang ◽  
Junjing Bao ◽  
Huai Huang ◽  
Junjun Liu ◽  
Ryan Scott Smith ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Surface Region ◽  
Surface Hydrophobicity ◽  
Moisture Uptake ◽  
Oh Groups ◽  
Pristine Sample ◽  
Physisorbed Water ◽  
Aging Test ◽  
Carbon Recovery ◽  
Low K

ABSTRACTMethyl depletion and subsequent moisture uptake have been found to be the primary plasma damages leading to dielectric loss in porous organosilicate (OSG) low-k dielectrics. A vacuum vapor silylation process was developed for dielectric recovery of plasma damaged OSG low-k dielectrics. The methyl or phenyl containing silylation agents were used to convert the hydrophilic -OH groups to hydrophobic groups. Compared with Trimethylchlorosilane (TMCS) and Phenyltrimethoxysilane (PTMOS), Dimethyldichlorosilane (DMDCS) was found to be more effective in recovering surface carbon concentration and surface hydrophobicity. But the carbon recovery effect was limited to the surface region.Alternatively, UV radiation with thermal activation was applied for dielectric recovery of plasma damaged OSG low-k dielectrics. The combined UV/thermal process was found to be efficient in reducing −OH, physisorbed water, and C=O bonds. The dielectric constant was recovered within 5% of the pristine sample and the leakage current was also much reduced. Aging test in air showed that no moisture retake was observed, indicating the repaired film was stable.

scholarly journals Non-Thermal Plasma-Modified Ru-Sn-Ti Catalyst for Chlorinated Volatile Organic Compound Degradation

Catalysts ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1456
Author(s):  
Yujie Fu ◽  
You Zhang ◽  
Qi Xin ◽  
Zhong Zheng ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
High Surface ◽  
High Surface Area ◽  
Surface Oxidation ◽  
Treatment Method ◽  
X Ray ◽  
Chlorinated Volatile Organic Compounds ◽  
Volatile Organic ◽  
Doped Titania

Chlorinated volatile organic compounds (CVOCs) are vital environmental concerns due to their low biodegradability and long-term persistence. Catalytic combustion technology is one of the more commonly used technologies for the treatment of CVOCs. Catalysts with high low-temperature activity, superior selectivity of non-toxic products, and resistance to chlorine poisoning are desirable. Here we adopted a plasma treatment method to synthesize a tin-doped titania loaded with ruthenium dioxide (RuO2) catalyst, possessing enhanced activity (T90%, the temperature at which 90% of dichloromethane (DCM) is decomposed, is 262 °C) compared to the catalyst prepared by the conventional calcination method. As revealed by transmission electron microscopy, X-ray diffraction, N2 adsorption, X-ray photoelectron spectroscopy, and hydrogen temperature-programmed reduction, the high surface area of the tin-doped titania catalyst and the enhanced dispersion and surface oxidation of RuO2 induced by plasma treatment were found to be the main factors determining excellent catalytic activities.

X-Ray Photoelectron-Spectroscopic Studies of Carbon Fiber Surfaces. Part IX: The Effect of Microwave Plasma Treatment on Carbon Fiber Surfaces

1989 ◽  
Vol 43 (7) ◽  
pp. 1153-1158 ◽  
Author(s):  
Yaoming Xie ◽  
Peter M. A. Sherwood
Keyword(s):  
Carbon Fiber ◽  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Prolonged Exposure ◽  
Microwave Plasma ◽  
Spectroscopic Studies ◽  
X Ray ◽  
Fiber Damage ◽  
Surface Functionality ◽  
Fiber Treatment

X-ray photoelectron spectroscopy has been used to monitor the surface chemical changes occurring on type II carbon fibers exposed to air, oxygen, and nitrogen plasmas. In all cases the plasmas caused changes in surface functionality, in terms of both C-O and C-N functionality. Prolonged exposure to the plasmas caused loss of surface functionality for air and oxygen plasmas, and extended treatment caused fiber damage. Plasma treatment of fibers promises to be an effective method of fiber treatment.

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

scholarly journals Depth Profiling of the Chemical Composition of Free-Standing Carbon Dots Using X-ray Photoelectron Spectroscopy

2018 ◽  
Vol 122 (26) ◽  
pp. 14889-14897 ◽  
Author(s):  
Irene Papagiannouli ◽  
Minna Patanen ◽  
Valérie Blanchet ◽  
John D. Bozek ◽  
Manuel de Anda Villa ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Photoelectron Spectroscopy ◽  
Carbon Dots ◽  
Depth Profiling ◽  
Free Standing ◽  
X Ray

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

2019 ◽  
Vol 963 ◽  
pp. 226-229
Author(s):  
Kidist Moges ◽  
Mitsuru Sometani ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Shinsuke Harada ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
High Temperature ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Annealing Duration ◽  
Nanometer Scale ◽  
Pure Nitrogen ◽  
X Ray ◽  
Initial Stage

We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometers of the interface. The high-temperature N2 annealing was found to induce not only SiO2/SiC interface nitridation similarly to NO annealing but also SiO2 surface nitridation.

Revealing the mechanism of the early stages of Ni–W RABiTS oxidation

2010 ◽  
Vol 25 (12) ◽  
pp. 2362-2370 ◽  
Author(s):  
Andrey V. Blednov ◽  
Oleg Yu. Gorbenko ◽  
Dmitriy P. Rodionov ◽  
Andrey R. Kaul
Keyword(s):  
Internal Oxidation ◽  
Photoelectron Spectroscopy ◽  
Oxidation Mechanism ◽  
Surface Oxidation ◽  
Surface Region ◽  
Near Surface ◽  
Precise Position ◽  
X Ray ◽  
Early Stages ◽  
Phase And Chemical Composition

The early stages of surface oxidation of biaxially textured Ni–W tapes were studied using thermodynamic calculations along with experimental tape oxidation at low P(O2). Tape phase and chemical composition, surface morphology, and roughness were examined using x-ray diffraction (XRD), energy-dispersive x-ray analysis (EDX), secondary ion mass spectroscopy (SIMS), x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). For a Ni0.95W0.05 alloy tape, the precise position of the tape oxidation line in P(O2)–T coordinates was established. This line includes a break at T ≈ 650 °C that originates from the change of the W oxidation mechanism from internal oxidation to oxidation on a free surface accompanied by segregation of the alloy components in the tape near-surface region. The surface roughness of a polished tape increased drastically during internal oxidation of W; further tape oxidation did not affect the integral roughness parameters, but introduced numerous small (˜;100 nm) features on the tape surface comprising NiO precipitates.

scholarly journals Microstructure and Mechanical Properties of Ti + N Ion Implanted Cronidur30 Steel

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 427 ◽  
Author(s):  
Jie Jin ◽  
Wei Wang ◽  
Xinchun Chen
Keyword(s):  
Mechanical Properties ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Modification ◽  
Surface Region ◽  
Grazing Incidence ◽  
Bearing Steel ◽  
Near Surface ◽  
X Ray ◽  
Ion Implanted

In this study, Ti + N ion implantation was used as a surface modification method for surface hardening and friction-reducing properties of Cronidur30 bearing steel. The structural modification and newly-formed ceramic phases induced by the ion implantation processes were investigated by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and grazing incidence X-ray diffraction (GIXRD). The mechanical properties of the samples were tested by nanoindentation and friction experiments. The surface nanohardness was also improved significantly, changing from ~10.5 GPa (pristine substrate) to ~14.2 GPa (Ti + N implanted sample). The friction coefficient of Ti + N ion implanted samples was greatly reduced before failure, which is less than one third of pristine samples. Furthermore, the TEM analyses confirmed a trilamellar structure at the near-surface region, in which amorphous/ceramic nanocrystalline phases were embedded into the implanted layers. The combined structural modification and hardening ceramic phases played a crucial role in improving surface properties, and the variations in these two factors determined the differences in the mechanical properties of the samples.

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